Inventor · disambiguated record
Hugues Marchand
Also filed as: MARCHAND HUGUES
11 granted patents·3 pending applications·134 citations·filing 2001–2023
91Inventor score
Top patents by PatentIndex Score
14 records- 0196US9129977B2Method of controlling stress in group-III nitride films deposited on substratesMARCHAND HUGUES·Filed 2011·Granted Sep 8, 2015·28 cites·45 claims
- 0296US7816764B2Method of controlling stress in gallium nitride films deposited on substratesUNIV CALIFORNIA·Filed 2009·Granted Oct 19, 2010·32 cites·20 claims
- 0394US7655090B2Method of controlling stress in gallium nitride films deposited on substratesUNIV CALIFORNIA·Filed 2007·Granted Feb 2, 2010·22 cites·16 claims
- 0493US8525230B2Field-effect transistor with compositionally graded nitride layer on a silicaon substrateMARCHAND HUGUES·Filed 2010·Granted Sep 3, 2013·14 cites·15 claims
- 0588US9917156B1Nucleation layer for growth of III-nitride structuresIQE PLC·Filed 2016·Granted Mar 13, 2018·9 cites·40 claims
- 0687US9691712B2Method of controlling stress in group-III nitride films deposited on substratesUNIV CALIFORNIA·Filed 2014·Granted Jun 27, 2017·4 cites·32 claims
- 0784US7687888B2Method of controlling stress in gallium nitride films deposited on substratesUNIV CALIFORNIA·Filed 2001·Granted Mar 30, 2010·20 cites·17 claims
- 0879US9012253B2Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methodsLOCHTEFELD ANTHONY·Filed 2010·Granted Apr 21, 2015·4 cites·14 claims
- 0967US10347794B2Gallium nitride wafer substrate for solid state lighting devices and associated systemsQROMIS INC·Filed 2015·Granted Jul 9, 2019·1 cites·19 claims
- 1064US2025331334A1A light emitting device on geIQE PLC·Filed 2023·Application pending·0 cites
- 1152US10580871B2Nucleation layer for growth of III-nitride structuresIQE PLC·Filed 2018·Granted Mar 3, 2020·0 cites·14 claims
- 1250US11133408B2Dielectric passivation for layered structuresIQE PLC·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 1335US2015021621A1Self-aligned gate buried channel field effect transistorRAMGOSS INC·Filed 2014·Application pending·0 cites
- 1431US2017170283A1Iii-nitride structures grown on silicon substrates with increased compressive stressIQE PLC·Filed 2016·Application pending·0 cites
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