Inventor · disambiguated record
Kanwal K. Raina
Also filed as: RAINA KANWAL · RAINA KANWAL K
40 granted patents·1 pending application·574 citations·filing 1992–2006
98Inventor score
Top patents by PatentIndex Score
41 records- 0197US6537427B1Deposition of smooth aluminum filmsMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 25, 2003·96 cites·16 claims
- 0296US6137214ADisplay device with silicon-containing adhesion layerMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 24, 2000·92 cites·26 claims
- 0394US6064149AField emission device with silicon-containing adhesion layerMICRON TECHNOLOGY INC·Filed 1998·Granted May 16, 2000·64 cites·26 claims
- 0491US6106351AMethods of manufacturing microelectronic substrate assemblies for use in planarization processesMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 22, 2000·57 cites·28 claims
- 0587US6211608B1Field emission device with buffer layer and method of makingMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 3, 2001·41 cites·50 claims
- 0684US7097526B2Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplateMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 29, 2006·5 cites·14 claims
- 0782US6461211B2Method of forming resistor with adhesion layer for electron emission deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 8, 2002·14 cites·18 claims
- 0882US6348403B1Suppression of hillock formation in thin aluminum filmsMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 19, 2002·24 cites·16 claims
- 0981US6015323AField emission display cathode assembly government rightsMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·28 cites·39 claims
- 1077US6545407B1Electron emission apparatusMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 8, 2003·8 cites·26 claims
- 1174US6657376B1Electron emission devices and field emission display devices having buffer layer of microcrystalline siliconMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 2, 2003·21 cites·19 claims
- 1273US6635983B1Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplateMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 21, 2003·17 cites·6 claims
- 1373US6425791B1Method of making a field emission device with buffer layerMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 30, 2002·8 cites·52 claims
- 1468US6638399B2Deposition of smooth aluminum filmsMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 28, 2003·4 cites·20 claims
- 1567US6838815B2Field emission display with smooth aluminum filmMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 4, 2005·4 cites·16 claims
- 1662US6139385AMethod of making a field emission device with silicon-containing adhesion layerMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·10 cites·28 claims
- 1757US7239075B2Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplateMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 3, 2007·0 cites·14 claims
- 1856US7161211B2Aluminum-containing film derived from using hydrogen and oxygen gas in sputter depositionMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 9, 2007·3 cites·11 claims
- 1956US6455939B1Substantially hillock-free aluminum-containing componentsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 24, 2002·3 cites·15 claims
- 2056US6440505B1Methods for forming field emission display devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 27, 2002·2 cites·22 claims
- 2152US7088037B2Field emission display deviceMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 8, 2006·1 cites·18 claims
- 2251US7101586B2Method to increase the emission current in FED displays through the surface modification of the emittersMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 5, 2006·1 cites·12 claims
- 2351US6239548B1Microelectronic substrate assemblies having elements in low compression stateMICRON TECHNOLOGY INC·Filed 2000·Granted May 29, 2001·1 cites·7 claims
- 2451US5969423AAluminum-containing films derived from using hydrogen and oxygen gas in sputter depositionMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 19, 1999·10 cites·5 claims
- 2550US5314869AMethod for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxyTEXAS A & M UNIV SYS·Filed 1992·Granted May 24, 1994·10 cites·13 claims
- 2649US6893905B2Method of forming substantially hillock-free aluminum-containing componentsMICRON TECHNOLOGY INC·Filed 2002·Granted May 17, 2005·1 cites·9 claims
- 2748US7268481B2Field emission display with smooth aluminum filmMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 11, 2007·0 cites·13 claims
- 2848US7052923B2Field emission display with smooth aluminum filmMICRON TECHNOLOGY INC·Filed 2004·Granted May 30, 2006·0 cites·11 claims
- 2948US6194783B1Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefromMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 27, 2001·10 cites·24 claims
- 3048US6057238AMethod of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefromMICRON TECHNOLOGY INC·Filed 1998·Granted May 2, 2000·13 cites·8 claims
- 3147US6509686B1Field emission display cathode assembly with gate buffer layerMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 21, 2003·5 cites·16 claims
- 3246US6911766B2Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplateMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 28, 2005·0 cites·9 claims
- 3346US2004266308A1Method to increase the emission current in FED displays through the surface modification of the emittersFiled 2003·Application pending·0 cites
- 3445US6831403B2Field emission display cathode assemblyMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·0 cites·19 claims
- 3543US6222271B1Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefromMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 24, 2001·7 cites·7 claims
- 3642US6264750B1Method and system for forming SbSI thin filmsTEXAS A & M UNIV SYS·Filed 2000·Granted Jul 24, 2001·0 cites·18 claims
- 3738US6140701ASuppression of hillock formation in thin aluminum filmsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·5 cites·11 claims
- 3836US6107688AAluminum-containing films derived from using hydrogen and oxygen gas in sputter depositionMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 22, 2000·3 cites·25 claims
- 3932US6165568AMethods for forming field emission display devicesMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 26, 2000·2 cites·18 claims
- 4030US5407906AEpitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structureTEXAS A & M UNIV SYS·Filed 1994·Granted Apr 18, 1995·2 cites·9 claims
- 4129US6153262AMethod for forming SbSI thin filmsTEXAS A & M UNIV SYS·Filed 1999·Granted Nov 28, 2000·2 cites·8 claims
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