Inventor · disambiguated record
Karen Kirmse
Also filed as: KIRMSE KAREN H · KIRMSE KAREN H R
4 granted patents·1 pending application·48 citations·filing 2002–2006
75Inventor score
Top patents by PatentIndex Score
5 records- 0178US7214609B2Methods for forming single damascene via or trench cavities and for forming dual damascene via cavitiesTEXAS INSTRUMENTS INC·Filed 2002·Granted May 8, 2007·33 cites·7 claims
- 0260US7569464B2Method for manufacturing a semiconductor device having improved across chip implant uniformityTEXAS INSTRUMENTS INC·Filed 2006·Granted Aug 4, 2009·2 cites·18 claims
- 0360US6998221B2Method for forming a via in a substrateTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 14, 2006·8 cites·18 claims
- 0452US7033897B2Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technologyTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 25, 2006·5 cites·16 claims
- 0540US2005263834A1Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technologyCHEN YUANNING·Filed 2005·Application pending·0 cites
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