Inventor · disambiguated record
Tomoaki Hatayama
Also filed as: HATAYAMA TOMOAKI
7 granted patents·3 pending applications·10 citations·filing 2009–2020
77Inventor score
Technology areasH10P
Top patents by PatentIndex Score
10 records- 0177US10612160B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Apr 7, 2020·2 cites·5 claims
- 0275US9957641B2Epitaxial wafer and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 1, 2018·2 cites·5 claims
- 0369US8999854B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Apr 7, 2015·2 cites·10 claims
- 0468US9293549B2Silicon carbide semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Mar 22, 2016·2 cites·2 claims
- 0560US9006747B2SiC semiconductor element and manufacturing method thereofHATAYAMA TOMOAKI·Filed 2012·Granted Apr 14, 2015·2 cites·21 claims
- 0648US12302621B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted May 13, 2025·0 cites·27 claims
- 0748US2011175111A1Silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 0841US2013183820A1Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 0939US2013023113A1Method for manufacturing semiconductor deviceNAT UNIV CORP NARA INST·Filed 2012·Application pending·0 cites
- 1032US10192967B2Silicon carbide semiconductor with trench gateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jan 29, 2019·0 cites·6 claims
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