Inventor · disambiguated record
Jason Janesky
Also filed as: DEHERRERA MARK F · JANESKY JASON · JANESKY JASON A · JANESKY JASON ALLEN
49 granted patents·3 pending applications·1,454 citations·filing 2000–2023
98Inventor score
Files withEVERSPIN TECHNOLOGIES INC31FREESCALE SEMICONDUCTOR INC9MOTOROLA INC7APPLE INC2AGGARWAL SANJEEV1
Top patents by PatentIndex Score
52 records- 0198US9136464B1Apparatus and process for manufacturing ST-MRAM having a metal oxide tunnel barrierEVERSPIN TECHNOLOGIES INC·Filed 2013·Granted Sep 15, 2015·76 cites·22 claims
- 0298US9093640B2Method for manufacturing and magnetic devices having double tunnel barriersEVERSPIN TECHNOLOGIES INC·Filed 2014·Granted Jul 28, 2015·32 cites·32 claims
- 0398US6545906B1Method of writing to scalable magnetoresistance random access memory elementMOTOROLA INC·Filed 2001·Granted Apr 8, 2003·522 cites·31 claims
- 0497US9548442B2Magnetoresistive structure having two dielectric layers, and method of manufacturing sameEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Jan 17, 2017·21 cites·16 claims
- 0597US6654278B1Magnetoresistance random access memoryMOTOROLA INC·Filed 2002·Granted Nov 25, 2003·164 cites·37 claims
- 0697US6633498B1Magnetoresistive random access memory with reduced switching fieldMOTOROLA INC·Filed 2002·Granted Oct 14, 2003·153 cites·23 claims
- 0796US7572645B2Magnetic tunnel junction structure and methodEVERSPIN TECHNOLOGIES INC·Filed 2006·Granted Aug 11, 2009·47 cites·20 claims
- 0896US6531723B1Magnetoresistance random access memory for improved scalabilityMOTOROLA INC·Filed 2001·Granted Mar 11, 2003·80 cites·21 claims
- 0995US8685756B2Method for manufacturing and magnetic devices having double tunnel barriersAGGARWAL SANJEEV·Filed 2011·Granted Apr 1, 2014·29 cites·20 claims
- 1094US9391264B2MRAM having an unpinned, fixed synthetic anti-ferromagnetic structureEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Jul 12, 2016·7 cites·26 claims
- 1193US8754460B2MRAM synthetic anitferomagnet structureEVERSPIN TECHNOLOGIES INC·Filed 2013·Granted Jun 17, 2014·9 cites·20 claims
- 1292US9281168B2Reducing switching variation in magnetoresistive devicesEVERSPIN TECHNOLOGIES INC·Filed 2014·Granted Mar 8, 2016·13 cites·21 claims
- 1392US6818961B1Oblique deposition to induce magnetic anisotropy for MRAM cellsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Nov 16, 2004·78 cites·48 claims
- 1491US10707410B2Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereofEVERSPIN TECHNOLOGIES INC·Filed 2018·Granted Jul 7, 2020·2 cites·20 claims
- 1591US10199571B2Methods of manufacturing magnetoresistive MTJ stacks having an unpinned, fixed synthetic anti-ferromagnetic structureEVERSPIN TECHNOLOGIES INC·Filed 2017·Granted Feb 5, 2019·4 cites·20 claims
- 1691US9093637B2MRAM synthetic anitferomagnet structureEVERSPIN TECHNOLOGIES INC·Filed 2014·Granted Jul 28, 2015·6 cites·35 claims
- 1790US9793468B2Magnetoresistive MTJ stack having an unpinned, fixed synthetic anti-ferromagnetic structureEVERSPIN TECHNOLOGIES INC·Filed 2016·Granted Oct 17, 2017·4 cites·20 claims
- 1888US11139429B2Magnetoresistive structure having two dielectric layers, and method of manufacturing sameEVERSPIN TECHNOLOGIES INC·Filed 2020·Granted Oct 5, 2021·2 cites·20 claims
- 1988US9893275B2Magnetoresistive structure having two dielectric layers, and method of manufacturing sameEVERSPIN TECHNOLOGIES INC·Filed 2017·Granted Feb 13, 2018·5 cites·24 claims
- 2087US8497538B2MRAM synthetic antiferromagnet structurePIETAMBARAM SRINIVAS V·Filed 2006·Granted Jul 30, 2013·11 cites·4 claims
- 2187US6720597B2Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layersMOTOROLA INC·Filed 2001·Granted Apr 13, 2004·42 cites·15 claims
- 2286US10897008B2Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereofEVERSPIN TECHNOLOGIES INC·Filed 2020·Granted Jan 19, 2021·1 cites·20 claims
- 2384US10608172B2Magnetoresistive structure having two dielectric layers, and method of manufacturing sameEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Mar 31, 2020·3 cites·20 claims
- 2484US7129098B2Reduced power magnetoresistive random access memory elementsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 31, 2006·25 cites·14 claims
- 2583US10230046B2Magnetoresistive structure having two dielectric layers, and method of manufacturing sameEVERSPIN TECHNOLOGIES INC·Filed 2017·Granted Mar 12, 2019·3 cites·20 claims
- 2683US9444037B2Magnetoresistive memory element having a metal oxide tunnel barrierEVERSPIN TECHNOLOGIES INC·Filed 2016·Granted Sep 13, 2016·5 cites·20 claims
- 2782US9455015B2High temperature data retention in magnetoresistive random access memoryEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Sep 27, 2016·6 cites·20 claims
- 2880US11925122B2Magnetoresistive structure having two dielectric layers, and method of manufacturing sameEVERSPIN TECHNOLOGIES INC·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 2980US9543041B2Configuration and testing for magnetoresistive memory to ensure long term continuous operationEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Jan 10, 2017·4 cites·18 claims
- 3080US9293698B2Magnetoresistive structure having a metal oxide tunnel barrier and method of manufacturing sameEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Mar 22, 2016·4 cites·21 claims
- 3178US7235408B2Synthetic antiferromagnetic structure for magnetoelectronic devicesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 26, 2007·5 cites·21 claims
- 3277US11744161B2Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereofEVERSPIN TECHNOLOGIES INC·Filed 2020·Granted Aug 29, 2023·0 cites·20 claims
- 3377US11488647B2Stacked magnetoresistive structures and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Nov 1, 2022·4 cites·16 claims
- 3477US7158407B2Triple pulse method for MRAM toggle bit characterizationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 2, 2007·10 cites·20 claims
- 3576US10600460B2Perpendicular magnetic memory using spin-orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2018·Granted Mar 24, 2020·4 cites·22 claims
- 3676US6515341B2Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrierMOTOROLA INC·Filed 2001·Granted Feb 4, 2003·22 cites·31 claims
- 3775US12437828B2Systems and methods for monitoring and managing memory devicesEVERSPIN TECHNOLOGIES INC·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 3872US12320871B2Yoke structures for magnetometersAPPLE INC·Filed 2022·Granted Jun 3, 2025·0 cites·15 claims
- 3972US9954163B2Structures and methods for shielding magnetically sensitive componentsEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Apr 24, 2018·2 cites·20 claims
- 4071US7329935B2Low power magnetoresistive random access memory elementsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Feb 12, 2008·4 cites·15 claims
- 4171US6967366B2Magnetoresistive random access memory with reduced switching field variationFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Nov 22, 2005·15 cites·12 claims
- 4270US6898112B2Synthetic antiferromagnetic structure for magnetoelectronic devicesFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 24, 2005·9 cites·28 claims
- 4368US11088317B2Structures and methods for shielding magnetically sensitive componentsEVERSPIN TECHNOLOGIES INC·Filed 2018·Granted Aug 10, 2021·1 cites·20 claims
- 4468US6579625B1Magnetoelectronics element having a magnetic layer formed of multiple sub-element layersMOTOROLA INC·Filed 2000·Granted Jun 17, 2003·12 cites·18 claims
- 4567US11798646B2Systems and methods for monitoring and managing memory devicesEVERSPIN TECHNOLOGIES INC·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 4658US7184300B2Magneto resistance random access memory elementFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Feb 27, 2007·8 cites·43 claims
- 4753US2024107892A1Magnetoresistance sensor with biased free layer for improved stability of magnetic performanceAPPLE INC·Filed 2022·Application pending·0 cites
- 4852US10923170B2Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routinesEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Feb 16, 2021·0 cites·17 claims
- 4949US9595665B2Non-reactive photoresist removal and spacer layer optimization in a magnetoresistive deviceEVERSPIN TECHNOLOGIES INC·Filed 2016·Granted Mar 14, 2017·0 cites·20 claims
- 5047US10262713B2Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routinesEVERSPIN TECHNOLOGIES INC·Filed 2017·Granted Apr 16, 2019·0 cites·10 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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