Inventor · disambiguated record
Ok-Hyun Nam
Also filed as: NAM OK HYUN
16 granted patents·8 pending applications·923 citations·filing 1998–2023
94Inventor score
Files withSAMSUNG ELECTRO MECH5UNIV NORTH CAROLINA STATE5NAM OK HYUN3SAMSUNG ELECTRONICS CO LTD3KOREA POLYTECHNIC UNIV INDUSTRY ACADEMIC COOPERATION FOUNDATION2
Top patents by PatentIndex Score
24 records- 0198US6051849AGallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layerUNIV NORTH CAROLINA STATE·Filed 1998·Granted Apr 18, 2000·452 cites·25 claims
- 0296US6602763B2Methods of fabricating gallium nitride semiconductor layers by lateral overgrowthUNIV NORTH CAROLINA STATE·Filed 2001·Granted Aug 5, 2003·102 cites·64 claims
- 0395US6608327B1Gallium nitride semiconductor structure including laterally offset patterned layersUNIV NORTH CAROLINA STATE·Filed 1998·Granted Aug 19, 2003·198 cites·16 claims
- 0494US6570192B1Gallium nitride semiconductor structures including lateral gallium nitride layersUNIV NORTH CAROLINA STATE·Filed 2000·Granted May 27, 2003·67 cites·26 claims
- 0586US6500747B1Method of manufacturing GaN semiconductor substrateSAMSUNG ELECTRO MECH·Filed 2001·Granted Dec 31, 2002·36 cites·8 claims
- 0680US6744064B2Nitride semiconductor light emitting deviceSAMSUNG ELECTRO MECH·Filed 2001·Granted Jun 1, 2004·36 cites·16 claims
- 0778US7285857B2GaN-based III—V group compound semiconductor device and p-type electrode for the sameKWANGJU INST SCI & TECH·Filed 2004·Granted Oct 23, 2007·22 cites·22 claims
- 0871US11699587B2Method for manufacturing diamond substrateKOREA POLYTECHNIC UNIV INDUSTRY ACADEMIC COOPERATION FOUNDATION·Filed 2019·Granted Jul 11, 2023·2 cites·14 claims
- 0968US9099609B2Method of forming a non-polar/semi-polar semiconductor template layer on unevenly patterned substrateNAM OK HYUN·Filed 2010·Granted Aug 4, 2015·2 cites·10 claims
- 1068US7616674B2Semiconductor laser diode arraySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 10, 2009·2 cites·21 claims
- 1163US9153737B2High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereofNAM OK HYUN·Filed 2010·Granted Oct 6, 2015·2 cites·11 claims
- 1254US7934835B2Laser display device including first and second scannersSAMSUNG LED CO LTD·Filed 2007·Granted May 3, 2011·0 cites·13 claims
- 1353US6555167B2Method for growing high quality group-III nitride thin film by metal organic chemical vapor depositionSAMSUNG ELECTRO MECH·Filed 2001·Granted Apr 29, 2003·2 cites·7 claims
- 1447US2024153766A1Method of manufacturing nitrogen-face nitride semiconductor and nitrogen-face nitride semiconductor device manufactured using the sameTECH UNIV OF KOREA INDUSTRY ACADEMIC COOPERATION FOUNDATION·Filed 2023·Application pending·0 cites
- 1547US2024154001A1Method of manufacturing nitride semiconductor and nitride semiconductor thin film prepared using the sameTECH UNIV OF KOREA INDUSTRY ACADEMIC COOPERATION FOUNDATION·Filed 2023·Application pending·0 cites
- 1645US8262227B2Laser display device employing blue laser diodeSON JOONG-KON·Filed 2011·Granted Sep 11, 2012·0 cites·13 claims
- 1744US11978629B2Method for manufacturing aluminum nitride-based transistorKOREA POLYTECHNIC UNIV INDUSTRY ACADEMIC COOPERATION FOUNDATION·Filed 2019·Granted May 7, 2024·0 cites·11 claims
- 1840US6901097B2Semiconductor laser diode and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 31, 2005·0 cites·34 claims
- 1940US2006093000A1Multiple-wavelength laser diode and method of fabricating the sameSAMSUNG ELECTRO MECH·Filed 2005·Application pending·0 cites
- 2040US2006093001A1Multiple-wavelength laser diode and method of fabricating the sameSAMSUNG ELECTRO MECH·Filed 2005·Application pending·0 cites
- 2139US2002148534A2Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through offset masksUNIV NORTH CAROLINA STATE·Filed 2001·Application pending·0 cites
- 2237US2012145991A1High-quality non-polar/semi-polar semiconductor element on tilt substrate and fabrication method thereofNAM OK HYUN·Filed 2010·Application pending·0 cites
- 2337US2005167681A1Electrode layer, light emitting device including the same, and method of forming the electrode layerKWANGJU INST SCI & TECH·Filed 2004·Application pending·0 cites
- 2436US2005006653A1Electrode layer, light generating device including the same and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →