Inventor · disambiguated record
Yoshinori Hatanaka
Also filed as: HATANAKA YOSHINORI
14 granted patents·249 citations·filing 1993–2006
93Inventor score
Top patents by PatentIndex Score
14 records- 0190US7402811B2Ultra-high resolution pixel electrode arrangement structure and signal processing methodUNIV SHIZUOKA NAT UNIV CORP·Filed 2004·Granted Jul 22, 2008·44 cites·7 claims
- 0286US6618939B2Process for producing resonant tagMIYAKE KK·Filed 1999·Granted Sep 16, 2003·54 cites·3 claims
- 0379US6294227B1Method of forming protective film on plastic part for vehicle-use and apparatusKOITO MFG CO LTD·Filed 2000·Granted Sep 25, 2001·17 cites·14 claims
- 0475US7256738B2Resonant circuitsMIYAKE KK·Filed 2003·Granted Aug 14, 2007·26 cites·5 claims
- 0575US6372304B1Method and apparatus for forming SiC thin film on high polymer base material by plasma CVDSUZUKI MOTOR CO·Filed 1997·Granted Apr 16, 2002·50 cites·17 claims
- 0674US8044476B2Wide range radiation detector and manufacturing methodUNIV SHIZUOKA NAT UNIV CORP·Filed 2006·Granted Oct 25, 2011·3 cites·15 claims
- 0770US6472088B2Composite and manufacturing method thereforMURAKAMI CORP·Filed 2001·Granted Oct 29, 2002·8 cites·5 claims
- 0867US6692794B2Composite and manufacturing method thereforMURAKAMI CORP·Filed 2002·Granted Feb 17, 2004·7 cites·5 claims
- 0966US6936806B1Photoelectric conversion device and solid-state image sensing device using the sameMINOLTA CO LTD·Filed 2000·Granted Aug 30, 2005·13 cites·29 claims
- 1048US5495146APlanar display apparatusMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 27, 1996·7 cites·11 claims
- 1146US6456639B2Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including sameSONY CORP·Filed 2001·Granted Sep 24, 2002·1 cites·5 claims
- 1244US5962083AMethods of depositing films on polymer substratesSUZUKI MOTOR CO·Filed 1996·Granted Oct 5, 1999·12 cites·8 claims
- 1339US6414975B1Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including sameSONY CORP·Filed 1998·Granted Jul 2, 2002·6 cites·12 claims
- 1432US5587627APlanar display apparatus having exposed insulated substrate portionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 24, 1996·1 cites·12 claims
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