Inventor · disambiguated record
Lubomir L. Jastrzebski
Also filed as: JASTRZEBSKI LUBOMIR L
37 granted patents·1 pending application·1,301 citations·filing 1977–2018
98Inventor score
Files withRCA CORP23GEN ELECTRIC5SEMICONDUCTOR DIAGNOSTICS INC3SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD3HARRIS CORP1
Top patents by PatentIndex Score
38 records- 0196US6680621B2Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage currentSEMICONDUCTOR DIAGNOSTICS INC·Filed 2001·Granted Jan 20, 2004·133 cites·62 claims
- 0294US4578142AMethod for growing monocrystalline silicon through mask layerRCA CORP·Filed 1984·Granted Mar 25, 1986·101 cites·16 claims
- 0392US6569691B1Measurement of different mobile ion concentrations in the oxide layer of a semiconductor waferSEMICONDUCTOR DIAGNOSTICS INC·Filed 2000·Granted May 27, 2003·72 cites·35 claims
- 0492US4554570AVertically integrated IGFET deviceRCA CORP·Filed 1983·Granted Nov 19, 1985·71 cites·9 claims
- 0592US4530149AMethod for fabricating a self-aligned vertical IGFETRCA CORP·Filed 1985·Granted Jul 23, 1985·111 cites·17 claims
- 0691US10209190B2Micro photoluminescence imaging with optical filteringSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2018·Granted Feb 19, 2019·10 cites·18 claims
- 0790US4348690ASemiconductor imagersRCA CORP·Filed 1981·Granted Sep 7, 1982·55 cites·9 claims
- 0888US4615762AMethod for thinning siliconRCA CORP·Filed 1985·Granted Oct 7, 1986·97 cites·5 claims
- 0988US4482422AMethod for growing a low defect monocrystalline layer on a maskRCA CORP·Filed 1982·Granted Nov 13, 1984·70 cites·13 claims
- 1084US4481522ACCD Imagers with substrates having drift fieldRCA CORP·Filed 1982·Granted Nov 6, 1984·47 cites·16 claims
- 1182US4566025ACMOS Structure incorporating vertical IGFETSRCA CORP·Filed 1983·Granted Jan 21, 1986·41 cites·12 claims
- 1282US4549926AMethod for growing monocrystalline silicon on a mask layerRCA CORP·Filed 1983·Granted Oct 29, 1985·53 cites·24 claims
- 1377US4619033AFabricating of a CMOS FET with reduced latchup susceptibilityRCA CORP·Filed 1985·Granted Oct 28, 1986·46 cites·7 claims
- 1477US4592792AMethod for forming uniformly thick selective epitaxial siliconRCA CORP·Filed 1985·Granted Jun 3, 1986·47 cites·13 claims
- 1572US4698316AMethod of depositing uniformly thick selective epitaxial siliconRCA CORP·Filed 1985·Granted Oct 6, 1987·42 cites·5 claims
- 1672US4498772AMethod to determine the crystalline properties of an interface of two materials by an optical techniqueRCA CORP·Filed 1982·Granted Feb 12, 1985·26 cites·4 claims
- 1770US10018565B2Micro photoluminescence imaging with optical filteringSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2015·Granted Jul 10, 2018·1 cites·27 claims
- 1870US4557794AMethod for forming a void-free monocrystalline epitaxial layer on a maskRCA CORP·Filed 1984·Granted Dec 10, 1985·31 cites·4 claims
- 1968US4586240AVertical IGFET with internal gate and method for making sameRCA CORP·Filed 1985·Granted May 6, 1986·21 cites·3 claims
- 2067US6815974B1Determining composition of mixed dielectricsSEMICONDUCTOR DIAGNOSTICS INC·Filed 2003·Granted Nov 9, 2004·7 cites·24 claims
- 2167US4891092AMethod for making a silicon-on-insulator substrateGEN ELECTRIC·Filed 1986·Granted Jan 2, 1990·33 cites·7 claims
- 2267US4186045AMethod of epitaxial growth employing electromigrationMASSACHUSETTS INST TECHNOLOGY·Filed 1977·Granted Jan 29, 1980·16 cites·24 claims
- 2359US4704186ARecessed oxide method for making a silicon-on-insulator substrateRCA CORP·Filed 1986·Granted Nov 3, 1987·24 cites·5 claims
- 2458US4546375AVertical IGFET with internal gate and method for making sameRCA CORP·Filed 1982·Granted Oct 8, 1985·12 cites·5 claims
- 2557US4429047AMethod for determining oxygen content in semiconductor materialRCA CORP·Filed 1981·Granted Jan 31, 1984·14 cites·11 claims
- 2656US10012593B2Micro photoluminescence imagingSemilab SDI LLC·Filed 2015·Granted Jul 3, 2018·1 cites·43 claims
- 2755US4751561ADielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon waferRCA CORP·Filed 1987·Granted Jun 14, 1988·19 cites·4 claims
- 2855US4685199AMethod for forming dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon waferRCA CORP·Filed 1986·Granted Aug 11, 1987·20 cites·15 claims
- 2954US4923826AMethod for forming dielectrically isolated transistorHARRIS CORP·Filed 1989·Granted May 8, 1990·22 cites·11 claims
- 3051US4642565AMethod to determine the crystalline properties of an interface of two materials by photovoltage phenomenonRCA CORP·Filed 1984·Granted Feb 10, 1987·10 cites·9 claims
- 3149US4824698AHigh temperature annealing to improve SIMOX characteristicsGEN ELECTRIC·Filed 1987·Granted Apr 25, 1989·17 cites·8 claims
- 3246US4766317AOptical reflectance method of examining a SIMOX articleGEN ELECTRIC·Filed 1987·Granted Aug 23, 1988·13 cites·5 claims
- 3342US10883941B2Micro photoluminescence imagingSEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD·Filed 2018·Granted Jan 5, 2021·0 cites·19 claims
- 3442US2009047748A1Enhanced sensitivity non-contact electrical monitoring of copper contamination on silicon surfaceSAVTCHOUK ALEXANDRE·Filed 2008·Application pending·0 cites
- 3539US4772568AMethod of making integrated circuit with pair of MOS field effect transistors sharing a common source/drain regionGEN ELECTRIC·Filed 1987·Granted Sep 20, 1988·7 cites·5 claims
- 3638US4654681AArrangement of semiconductor devices on a waferRCA CORP·Filed 1985·Granted Mar 31, 1987·5 cites·4 claims
- 3733US4360963AMethod of making CCD imagers with reduced defectsRCA CORP·Filed 1981·Granted Nov 30, 1982·3 cites·8 claims
- 3827US4805187ADetermination of substrate temperature used during oxygen implantation of SIMOX waferGEN ELECTRIC·Filed 1987·Granted Feb 14, 1989·3 cites·6 claims
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