Inventor · disambiguated record
Tommy Hsiao
Also filed as: HSIAO TOMMY · HSIAO TOMMY C
4 granted patents·2 pending applications·82 citations·filing 1999–2003
75Inventor score
Top patents by PatentIndex Score
6 records- 0180US6747318B1Buried channel devices and a process for their fabrication simultaneously with surface channel devices to produce transistors and capacitors with multiple electrical gate oxidesLSI LOGIC CORP·Filed 2001·Granted Jun 8, 2004·34 cites·11 claims
- 0274US6867097B1Method of making a memory cell with polished insulator layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 15, 2005·45 cites·10 claims
- 0333US2004082127A1Method and system for reducing short channel effects in a memory device by reduction of drain thermal cyclingADVANCED MICRO DEVICES INC·Filed 2003·Application pending·0 cites
- 0431US6235584B1Method and system for reducing short channel effects in a memory deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted May 22, 2001·2 cites·13 claims
- 0528US6200857B1Method of manufacturing a semiconductor device without arc loss in peripheral circuit regionADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 13, 2001·1 cites·10 claims
- 0627US2001050400A1Method and system for reducing short channel effects in a memory device formed using a self-aligned sourceFiled 1999·Application pending·0 cites
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