Inventor · disambiguated record
Shanjen Pan
Also filed as: PAN SHANJEN · PAN SHANJEN ROBERT · PATTON YVONNE
21 granted patents·4 pending applications·131 citations·filing 2001–2019
94Inventor score
Files withTEXAS INSTRUMENTS INC15CIRRUS LOGIC INT SEMICONDUCTOR LTD3CIRRUS LOGIC INC2PAN SHANJEN2PAN SHANJEN ROBERT2
Top patents by PatentIndex Score
25 records- 0187US7618870B2Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereofTEXAS INSTRUMENTS INC·Filed 2009·Granted Nov 17, 2009·10 cites·6 claims
- 0286US7262471B2Drain extended PMOS transistor with increased breakdown voltageTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 28, 2007·13 cites·19 claims
- 0380US9275992B1Formation of electrical components on a semiconductor substrate by polishing to isolate the componentsCIRRUS LOGIC INC·Filed 2014·Granted Mar 1, 2016·5 cites·26 claims
- 0480US7208364B2Methods of fabricating high voltage devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 24, 2007·9 cites·12 claims
- 0578US7235451B2Drain extended MOS devices with self-aligned floating region and fabrication methods thereforTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 26, 2007·25 cites·5 claims
- 0678US7018880B2Method for manufacturing a MOS transistor having reduced 1/f noiseTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 28, 2006·26 cites·19 claims
- 0773US9919913B2Fully depleted region for reduced parasitic capacitance between a poly-silicon layer and a substrate regionCIRRUS LOGIC INC·Filed 2015·Granted Mar 20, 2018·2 cites·18 claims
- 0873US7005354B2Depletion drain-extended MOS transistors and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 28, 2006·18 cites·18 claims
- 0963US7498652B2Non-uniformly doped high voltage drain-extended transistor and method of manufacture thereofTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 3, 2009·7 cites·24 claims
- 1063US7112480B2Method and structure for a low voltage CMOS integrated circuit incorporating higher-voltage devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 26, 2006·2 cites·4 claims
- 1159US8679929B2On current in one-time-programmable memory cellsPAN SHANJEN “ROBERT”·Filed 2011·Granted Mar 25, 2014·1 cites·13 claims
- 1259US8664706B2Current in one-time-programmable memory cellsPAN SHANJEN ROBERT·Filed 2012·Granted Mar 4, 2014·1 cites·6 claims
- 1359US6969901B1Method and structure for a low voltage CMOS integrated circuit incorporating higher-voltage devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 29, 2005·7 cites·11 claims
- 1457US10917052B2Dual device semiconductor structures with shared drainCIRRUS LOGIC INT SEMICONDUCTOR LTD·Filed 2019·Granted Feb 9, 2021·0 cites·15 claims
- 1551US8546222B1Electrically erasable programmable non-volatile memoryTEXAS INSTRUMENTS INC·Filed 2013·Granted Oct 1, 2013·0 cites·13 claims
- 1650US7122862B2Reduction of channel hot carrier effects in transistor devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 17, 2006·0 cites·6 claims
- 1749US2010035421A1Semiconductor well implanted through partially blocking material patternTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1849US2008283966A1High Density Capacitor Using Topographic SurfaceTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1948US10298184B2Dual device semiconductor structures with shared drainCIRRUS LOGIC INT SEMICONDUCTOR LTD·Filed 2016·Granted May 21, 2019·0 cites·11 claims
- 2047US7135373B2Reduction of channel hot carrier effects in transistor devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 14, 2006·1 cites·22 claims
- 2145US6803282B2Methods for fabricating low CHC degradation mosfet transistorsTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 12, 2004·4 cites·30 claims
- 2244US9853103B2Pinched doped well for a junction field effect transistor (JFET) isolated from the substrateCIRRUS LOGIC INT SEMICONDUCTOR LTD·Filed 2016·Granted Dec 26, 2017·0 cites·33 claims
- 2339US2012292682A1Electrically Erasable Programmable Non-Volatile MemoryPAN SHANJEN·Filed 2011·Application pending·0 cites
- 2435US2002084479A1High density capacitor using topographic surfaceFiled 2001·Application pending·0 cites
- 2522US8765550B2N-channel erasable programmable non-volatile memoryPAN SHANJEN·Filed 2012·Granted Jul 1, 2014·0 cites·10 claims
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