Inventor · disambiguated record
Antonio Vellei
Also filed as: VELLEI ANTONIO
23 granted patents·2 pending applications·26 citations·filing 2013–2024
92Inventor score
Top patents by PatentIndex Score
25 records- 0190US10854739B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 1, 2020·2 cites·22 claims
- 0289US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
- 0388US9076838B2Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 7, 2015·7 cites·15 claims
- 0482US12034066B2Power semiconductor device having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 0582US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 0680US10978418B2Method of forming an electrical contact and method of forming a chip package with a metal contact structure and protective layerINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
- 0779US10224206B2Bipolar transistor device with an emitter having two types of emitter regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Mar 5, 2019·2 cites·29 claims
- 0878US10461056B2Chip package and method of forming a chip package with a metal contact structure and protective layer, and method of forming an electrical contactINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 29, 2019·2 cites·7 claims
- 0973US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
- 1072US11594621B2Method of processing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 28, 2023·0 cites·27 claims
- 1172US9553179B2Semiconductor device and insulated gate bipolar transistor with barrier structureINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 24, 2017·3 cites·24 claims
- 1268US12033972B2Chip package, method of forming a chip package and method of forming an electrical contactINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 9, 2024·0 cites·12 claims
- 1367US9263552B2MOS-transistor with separated electrodes arranged in a trenchINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 16, 2016·2 cites·24 claims
- 1463US2025096149A1Semiconductor device with a silicon carbide portion and a glass structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1558US10930772B2IGBT having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 23, 2021·0 cites·24 claims
- 1654US10439055B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 8, 2019·0 cites·24 claims
- 1753US10910487B2Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 1851US9653568B2Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structuresINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 16, 2017·0 cites·5 claims
- 1950US9741571B2Bipolar transistor device with an emitter having two types of emitter regionsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Aug 22, 2017·0 cites·7 claims
- 2049US10347754B2Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 9, 2019·0 cites·19 claims
- 2146US2023290827A1Semiconductor device having macro cellsINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2244US11469317B2Rc igbtINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Oct 11, 2022·0 cites·20 claims
- 2343US10608104B2Trench transistor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 31, 2020·0 cites·26 claims
- 2442US9899504B2Power semiconductor transistor having increased bipolar amplificationINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 20, 2018·0 cites·19 claims
- 2542US9647100B2Semiconductor device with auxiliary structure including deep level dopantsINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 9, 2017·0 cites·25 claims
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