Inventor · disambiguated record
Hung-Lin Shih
Also filed as: SHIH HUNG-LIN
26 granted patents·7 pending applications·113 citations·filing 2005–2020
95Inventor score
Top patents by PatentIndex Score
33 records- 0193US10008599B1Complementary metal oxide semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 26, 2018·17 cites·8 claims
- 0290US7402496B2Complementary metal-oxide-semiconductor device and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jul 22, 2008·29 cites·23 claims
- 0388US9362358B2Spatial semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 7, 2016·6 cites·5 claims
- 0488US8951884B1Method for forming a FinFET structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Feb 10, 2015·7 cites·11 claims
- 0587US7544992B2Illuminating efficiency-increasable and light-erasable embedded memory structureUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jun 9, 2009·13 cites·10 claims
- 0685US10079180B1Method of forming a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 18, 2018·5 cites·19 claims
- 0782US7288828B2Metal oxide semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 30, 2007·11 cites·19 claims
- 0876US7732886B2Pin photodiode structureUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jun 8, 2010·6 cites·9 claims
- 0971US8022503B2Anti-fusse structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2008·Granted Sep 20, 2011·5 cites·24 claims
- 1070US10910386B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 2, 2021·1 cites·11 claims
- 1170US8389358B2Manufacturing method and structure of non-volatile memorySHIH HUNG-LIN·Filed 2011·Granted Mar 5, 2013·3 cites·12 claims
- 1266US11665888B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted May 30, 2023·0 cites·8 claims
- 1365US9018087B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 28, 2015·1 cites·17 claims
- 1463US7176504B1SiGe MOSFET with an erosion preventing Six1Gey1 layerUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 13, 2007·3 cites·9 claims
- 1562US7639536B2Storage unit of single-conductor non-volatile memory cell and method of erasing the sameUNITED MICROELECTRONICS CORP·Filed 2008·Granted Dec 29, 2009·2 cites·18 claims
- 1661US7998821B2Method of manufacturing complementary metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 16, 2011·2 cites·14 claims
- 1757US7544580B2Method for manufacturing passive componentsUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 9, 2009·1 cites·24 claims
- 1855US2015132966A1Method for forming a finfet structureUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1953US8232591B2Illuminating efficiency-increasable and light-erasable memorySHIH HUNG-LIN·Filed 2009·Granted Jul 31, 2012·0 cites·10 claims
- 2052US10475925B2Complementary metal oxide semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 12, 2019·0 cites·6 claims
- 2152US9105582B2Spatial semiconductor structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted Aug 11, 2015·0 cites·8 claims
- 2252US8362535B2Layout structure of non-volatile memory deviceUNITED MICROELECTRONICS CORP·Filed 2009·Granted Jan 29, 2013·1 cites·14 claims
- 2351US2008293222A1Method for forming silicon-germanium epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 2449US7902587B2Non-volatile memory cellUNITED MICROELECTRONICS CORP·Filed 2008·Granted Mar 8, 2011·0 cites·5 claims
- 2548US8320960B2Docking station and computer system using the docking stationSHIH HUNG-LIN·Filed 2009·Granted Nov 27, 2012·0 cites·3 claims
- 2646US2008194070A1Metal-oxide-semiconductor transistor device, manufacturing method thereof, and method of improving drain current thereofSHIH HUNG-LIN·Filed 2008·Application pending·0 cites
- 2745US2008076236A1Method for forming silicon-germanium epitaxial layerCHIANG JIH-SHUN·Filed 2006·Application pending·0 cites
- 2844US8409945B2Method of fabricating a charge trapping non-volatile memory cellSHIH HUNG-LIN·Filed 2011·Granted Apr 2, 2013·0 cites·5 claims
- 2943US11069690B2DRAM and flash structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 20, 2021·0 cites·8 claims
- 3043US2008017931A1Metal-oxide-semiconductor transistor device, manufacturing method thereof, and method of improving drain current thereofSHIH HUNG-LIN·Filed 2006·Application pending·0 cites
- 3141US8536653B2Metal oxide semiconductor transistorSHIH HUNG-LIN·Filed 2010·Granted Sep 17, 2013·0 cites·8 claims
- 3241US2016172190A1Gate oxide formation processUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 3339US2008116525A1Complementary metal-oxide-semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
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