Inventor · disambiguated record
Xiaolu Huang
Also filed as: HUANG XIAOLU
15 granted patents·24 pending applications·24 citations·filing 2010–2019
88Inventor score
Files withHUAIAN IMAGING DEVICE MFT CORP19HUANG XIAOLU6CHEN JING5SHANGHAI INST MICROSYS & INF3XIAO DEYUAN3
Top patents by PatentIndex Score
39 records- 0179US8233312B2DRAM cell utilizing floating body effect and manufacturing method thereofXIAO DEYUAN·Filed 2010·Granted Jul 31, 2012·6 cites·9 claims
- 0277US10741603B2Image sensor and method for manufacturing image sensorHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Granted Aug 11, 2020·2 cites·7 claims
- 0377US8409962B2Manufacturing method of copper interconnection structure with MIM capacitorXIAO DEYUAN·Filed 2010·Granted Apr 2, 2013·5 cites·12 claims
- 0465US8937354B2PD SOI device with a body contact structureCHEN JING·Filed 2010·Granted Jan 20, 2015·2 cites·12 claims
- 0564US8422288B2DRAM cell utilizing floating body effect and manufacturing method thereofXIAO DEYUAN·Filed 2010·Granted Apr 16, 2013·2 cites·9 claims
- 0663US8629029B2Vertical SOI bipolar junction transistor and manufacturing method thereofCHEN JING·Filed 2010·Granted Jan 14, 2014·2 cites·7 claims
- 0761US8461651B2ESD protection devices for SOI integrated circuit and manufacturing method thereofHUANG XIAOLU·Filed 2010·Granted Jun 11, 2013·2 cites·7 claims
- 0861US8450195B2Method of reducing floating body effect of SOI MOS device via a large tilt ion implantationCHEN JING·Filed 2010·Granted May 28, 2013·1 cites·12 claims
- 0957US8354714B2SOI MOS device having BTS structure and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·1 cites·10 claims
- 1056US8710549B2MOS device for eliminating floating body effects and self-heating effectsHUANG XIAOLU·Filed 2010·Granted Apr 29, 2014·1 cites·6 claims
- 1148US10483312B2Backside-illuminated complementary metal oxide semiconductor sensor and the manufacturing method thereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Granted Nov 19, 2019·0 cites·13 claims
- 1246US10658416B2Image sensor and method for manufacturing image sensorHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Granted May 19, 2020·0 cites·10 claims
- 1344US2020381468A1Image sensor, manufacturing method thereof and imaging deviceHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 1443US2020152551A1Stacked semiconductor devices and methods of manufacturing the sameHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 1543US2020152674A1Image sensor and method for manufacturing image sensorHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 1643US2020075651A1Double-layer color filter and method for forming the sameHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 1742US2019229140A1Image sensor and method for manufacturing image sensorHUAIAN IMAGING DEVICE MFG CORPORATION·Filed 2018·Application pending·0 cites
- 1842US2020154058A1Image sensor and method of manufacturing the sameHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 1940US2019123074A1Semiconductor Device and Preparation Method thereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 2040US2020350169A1Wafer bonding methodHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 2140US2020043969A1Semiconductor device and method of manufacturing the sameHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 2239US12006501B2Composition of drug targets and method of using thereofSHANGHAI NINTH PEOPLES HOSPITAL SHANGHAI JIAO TONG UNIV SCHOOL OF MEDICINE·Filed 2017·Granted Jun 11, 2024·0 cites·4 claims
- 2339US2019157328A1Image sensor, electronic device and manufacturing method thereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 2439US2019237503A1Image Sensor, and Forming Method thereof, and Working Method ThereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 2536US2019312073A1Image sensorHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 2636US2013020652A1Method for suppressing short channel effect of cmos deviceSHANGHAI HUALI MICROELECT CORP·Filed 2011·Application pending·0 cites
- 2736US2020075662A1Image sensors, forming methods of the same, and imaging devicesHUAIAN IMAGING DEVICE MFT CORP·Filed 2019·Application pending·0 cites
- 2836US2019181032A1Semiconductor device and manufacturing method thereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 2935US2019157332A1Back-side Illumination CMOS Image Sensor and Forming Method ThereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 3035US2019237501A1Semiconductor device and manufacturing method thereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 3135US2011291191A1MOS Structure with Suppressed SOI Floating Body Effect and Manufacturing Method thereofCHEN JING·Filed 2010·Application pending·0 cites
- 3234US8324035B2Manufacturing method of SOI MOS device eliminating floating body effectsCHEN JING·Filed 2010·Granted Dec 4, 2012·0 cites·6 claims
- 3334US2019189694A1Image Sensor and Forming Method ThereofHUAIAN IMAGING DEVICE MFT CORP·Filed 2018·Application pending·0 cites
- 3433US8354310B2SOI MOS device having a source/body ohmic contact and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·0 cites·6 claims
- 3533US2011221002A1Mos-type esd protection device in soi and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Application pending·0 cites
- 3633US2012018809A1Mos device for eliminating floating body effects and self-heating effectsHUANG XIAOLU·Filed 2010·Application pending·0 cites
- 3731US2012049262A1A dram cell structure with extended trench and a manufacturing method thereofHUANG XIAOLU·Filed 2010·Application pending·0 cites
- 3831US2013049119A1Multi-working voltages cmos device with single gate oxide layer thickness and manufacturing method thereofHUANG XIAOLU·Filed 2011·Application pending·0 cites
- 3926US2013065385A1Method for preparing spacer to reduce coupling interference in mosfetHUANG XIAOLU·Filed 2011·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →