Inventor · disambiguated record
Jiexin Luo
Also filed as: LUO JIEXIN
9 granted patents·3 pending applications·6 citations·filing 2010–2011
77Inventor score
Top patents by PatentIndex Score
12 records- 0165US8937354B2PD SOI device with a body contact structureCHEN JING·Filed 2010·Granted Jan 20, 2015·2 cites·12 claims
- 0263US8629029B2Vertical SOI bipolar junction transistor and manufacturing method thereofCHEN JING·Filed 2010·Granted Jan 14, 2014·2 cites·7 claims
- 0361US8450195B2Method of reducing floating body effect of SOI MOS device via a large tilt ion implantationCHEN JING·Filed 2010·Granted May 28, 2013·1 cites·12 claims
- 0457US8354714B2SOI MOS device having BTS structure and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·1 cites·10 claims
- 0538US9953118B2Modeling method of SPICE model series of SOI FETCHEN JING·Filed 2011·Granted Apr 24, 2018·0 cites·7 claims
- 0637US9134361B2Method for determining BSIMSOI4 DC model parametersCHEN JING·Filed 2011·Granted Sep 15, 2015·0 cites·6 claims
- 0737US2013054219A1Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method ThereofCHEN JING·Filed 2011·Application pending·0 cites
- 0835US2011291191A1MOS Structure with Suppressed SOI Floating Body Effect and Manufacturing Method thereofCHEN JING·Filed 2010·Application pending·0 cites
- 0934US8324035B2Manufacturing method of SOI MOS device eliminating floating body effectsCHEN JING·Filed 2010·Granted Dec 4, 2012·0 cites·6 claims
- 1033US8354310B2SOI MOS device having a source/body ohmic contact and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Granted Jan 15, 2013·0 cites·6 claims
- 1133US2011221002A1Mos-type esd protection device in soi and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2010·Application pending·0 cites
- 1227US8667440B2TCAD emulation calibration method of SOI field effect transistorCHAI ZHAN·Filed 2011·Granted Mar 4, 2014·0 cites·6 claims
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