Inventor · disambiguated record
Hisashi Ohtani
Also filed as: OHTANI HISASHI
431 granted patents·13 pending applications·27,739 citations·filing 1991–2018
99Inventor score
Top patents by PatentIndex Score
444 records- 0199US7473971B2Method of fabricating a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Jan 6, 2009·102 cites·47 claims
- 0299US7473592B2Method of fabricating a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Jan 6, 2009·60 cites·36 claims
- 0399US6803264B2Method of fabricating a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Oct 12, 2004·230 cites·14 claims
- 0499US6335231B1Method of fabricating a high reliable SOI substrateSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Jan 1, 2002·397 cites·15 claims
- 0599US6335541B1Semiconductor thin film transistor with crystal orientationSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Jan 1, 2002·457 cites·26 claims
- 0699US6303963B1Electro-optical device and semiconductor circuitSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Oct 16, 2001·370 cites·30 claims
- 0799US6285042B1Active Matry DisplaySEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Sep 4, 2001·514 cites·41 claims
- 0899US6277679B1Method of manufacturing thin film transistorSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Aug 21, 2001·194 cites·10 claims
- 0999US6274887B1Semiconductor device and manufacturing method thereforSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Aug 14, 2001·711 cites·81 claims
- 1099US6127702ASemiconductor device having an SOI structure and manufacturing method thereforSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Oct 3, 2000·668 cites·35 claims
- 1199US6031249ACMOS semiconductor device having boron doped channelSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Feb 29, 2000·237 cites·12 claims
- 1299US5923962AMethod for manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jul 13, 1999·1.5k cites·32 claims
- 1399US5705829ASemiconductor device formed using a catalyst element capable of promoting crystallizationSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Jan 6, 1998·365 cites·17 claims
- 1499US5643826AMethod for manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jul 1, 1997·2k cites·12 claims
- 1598US7791571B2Light emitting device and driving method of the sameSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Sep 7, 2010·78 cites·31 claims
- 1698US7642598B2Method of fabricating a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Jan 5, 2010·47 cites·34 claims
- 1798US7638805B2Method of fabricating a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Dec 29, 2009·36 cites·63 claims
- 1898US7476576B2Method of fabricating a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Jan 13, 2009·116 cites·26 claims
- 1998US7223666B2Semiconductor device that includes a silicide region that is not in contact with the lightly doped regionSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted May 29, 2007·76 cites·31 claims
- 2098US6977394B2Semiconductor device and manufacturing method thereforSEMICONDUCTOR ENERGY LAB·Filed 2003·Granted Dec 20, 2005·142 cites·24 claims
- 2198US6861670B1Semiconductor device having multi-layer wiringSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Mar 1, 2005·173 cites·36 claims
- 2298US6784037B2Semiconductor device and manufacturing method thereforSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Aug 31, 2004·135 cites·15 claims
- 2398US6674136B1Semiconductor device having driver circuit and pixel section provided over same substrateSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Jan 6, 2004·196 cites·12 claims
- 2498US6512271B1Semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Jan 28, 2003·204 cites·30 claims
- 2598US6365933B1Semiconductor device and method of manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Apr 2, 2002·320 cites·35 claims
- 2698US6259138B1Semiconductor device having multilayered gate electrode and impurity regions overlapping therewithSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Jul 10, 2001·207 cites·18 claims
- 2798US6165824AMethod of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Dec 26, 2000·384 cites·27 claims
- 2898US6147667ASemiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Nov 14, 2000·213 cites·31 claims
- 2998US6124604ALiquid crystal display device provided with auxiliary circuitry for reducing electrical resistanceSEMICONDUCTOR ENERGY LAB INC·Filed 1997·Granted Sep 26, 2000·195 cites·32 claims
- 3098US6087679ASemiconductor thin film and semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Jul 11, 2000·254 cites·17 claims
- 3198US5656825AThin film transistor having crystalline semiconductor layer obtained by irradiationSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Aug 12, 1997·298 cites·53 claims
- 3297US7235810B1Semiconductor device and method of fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Jun 26, 2007·180 cites·50 claims
- 3397US7138658B2Semiconductor device and method of manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Nov 21, 2006·34 cites·10 claims
- 3497US6998639B2Method for manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Feb 14, 2006·92 cites·20 claims
- 3597US6974731B2Laser apparatus, laser annealing method, and manufacturing method of a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Dec 13, 2005·135 cites·109 claims
- 3697US6753212B2Laser apparatus, laser annealing method, and manufacturing method of a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Jun 22, 2004·117 cites·36 claims
- 3797US6730550B1Laser apparatus, laser annealing method, and manufacturing method of a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted May 4, 2004·132 cites·60 claims
- 3897US6630687B1Active matrix display device having wiring layers which are connected over multiple contact partsSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Oct 7, 2003·96 cites·86 claims
- 3997US6545359B1Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereofSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Apr 8, 2003·181 cites·40 claims
- 4097US6524877B1Semiconductor device, and method of fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Feb 25, 2003·145 cites·11 claims
- 4197US6518594B1Semiconductor devicesSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Feb 11, 2003·172 cites·28 claims
- 4297US6479333B1Method of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Nov 12, 2002·132 cites·36 claims
- 4397US6410368B1Method of manufacturing a semiconductor device with TFTSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Jun 25, 2002·137 cites·48 claims
- 4497US6271543B1Active matrix type display device and method of manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Aug 7, 2001·187 cites·22 claims
- 4597US6140667ASemiconductor thin film in semiconductor device having grain boundariesSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Oct 31, 2000·164 cites·16 claims
- 4697US6088070AActive matrix liquid crystal with capacitor between light blocking film and pixel connecting electrodeSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Jul 11, 2000·173 cites·21 claims
- 4797US6077731ASemiconductor device and method for fabricating the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Jun 20, 2000·252 cites·63 claims
- 4897US5654203AMethod for manufacturing a thin film transistor using catalyst elements to promote crystallizationSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Aug 5, 1997·286 cites·16 claims
- 4997US5612250AMethod for manufacturing a semiconductor device using a catalystSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Mar 18, 1997·318 cites·1 claims
- 5097US5543352AMethod for manufacturing a semiconductor device using a catalystSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Aug 6, 1996·341 cites·20 claims
Showing the top 50 of 444 patent records by PatentIndex Score.
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