Inventor · disambiguated record
Yoon-Moon Park
Also filed as: PARK YOON-MOON
12 granted patents·1 pending application·40 citations·filing 2006–2019
87Inventor score
Top patents by PatentIndex Score
13 records- 0193US9735157B1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 15, 2017·15 cites·19 claims
- 0280US9318478B1Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 19, 2016·3 cites·20 claims
- 0380US8183152B2Method of fabricating semiconductor deviceSIM JAE-HWANG·Filed 2010·Granted May 22, 2012·5 cites·20 claims
- 0477US8487383B2Flash memory device having triple well structurePARK YOON-MOON·Filed 2010·Granted Jul 16, 2013·6 cites·20 claims
- 0574US7419909B2Methods of forming a semiconductor device that allow patterns in different regions that have different pitches to be connectedSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·5 cites·14 claims
- 0664US7989869B2Non-volatile memory devices having improved operational characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 2, 2011·2 cites·20 claims
- 0758US8208301B2Nonvolatile memory devices having common bit line structureKANG HEE-SOO·Filed 2009·Granted Jun 26, 2012·4 cites·20 claims
- 0851US11063065B2Semiconductor device having a negative capacitance using ferroelectrical materialSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·19 claims
- 0949US9087711B2Pattern structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 21, 2015·0 cites·13 claims
- 1048US2014061772A1Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regionJEONG WON-CHEOL·Filed 2013·Application pending·0 cites
- 1147US8610192B2Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regionsJEONG WON-CHEOL·Filed 2011·Granted Dec 17, 2013·0 cites·26 claims
- 1244US10916545B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·0 cites·6 claims
- 1341US8436412B2Pattern structure and method of forming the samePARK YOON MOON·Filed 2010·Granted May 7, 2013·0 cites·5 claims
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