Inventor
NAKAMURA DAI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “NAKAMURA DAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
9 patentsUS7974130B2Jul 5, 2011
Semiconductor memory device and method for erasing the same
TOSHIBA KK21 citations92
US7911844B2Mar 22, 2011
Non-volatile semiconductor storage device
TOSHIBA KK13 citations92
US7948797B2May 24, 2011
Nonvolatile semiconductor memory device and method for operating the same
TOSHIBA KK8 citations84
US9691484B2Jun 27, 2017
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
TOSHIBA KK7 citations83
US9324432B2Apr 26, 2016
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
TOSHIBA KK6 citations83
US7974135B2Jul 5, 2011
Non-volatile semiconductor memory device and erasing method thereof
TOSHIBA KK2 citations62
US7839679B2Nov 23, 2010
Nonvolatile semiconductor memory
TOSHIBA KK6 citations58
USRE46526EAug 29, 2017
Non-volatile semiconductor storage device
TOSHIBA KK0 citations51
USRE45307EDec 30, 2014
Non-volatile semiconductor storage device
TOSHIBA KK0 citations51
KIOXIA CORP
7 patentsUS11610630B2Mar 21, 2023
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
KIOXIA CORP1 citations72
USRE49274ENov 1, 2022
Non-volatile semiconductor storage device
KIOXIA CORP2 citations72
US11209846B2Dec 28, 2021
Semiconductor device having plural power source voltage generators, and voltage supplying method
KIOXIA CORP4 citations72
USRE50512EJul 29, 2025
Non-volatile semiconductor storage device
KIOXIA CORP0 citations62
US12237014B2Feb 25, 2025
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
KIOXIA CORP0 citations62
US11139039B2Oct 5, 2021
Memory device having memory cell and current detection circuit
KIOXIA CORP0 citations62
US12197732B2Jan 14, 2025
Memory system
KIOXIA CORP0 citations50
TOSHIBA MEMORY CORP
5 patentsUS10431309B2Oct 1, 2019
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
TOSHIBA MEMORY CORP4 citations83
US10049745B2Aug 14, 2018
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
TOSHIBA MEMORY CORP5 citations83
US10978151B2Apr 13, 2021
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
TOSHIBA MEMORY CORP2 citations72
US10304538B2May 28, 2019
Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
TOSHIBA MEMORY CORP2 citations72
USRE47355EApr 16, 2019
Non-volatile semiconductor storage device
TOSHIBA MEMORY CORP0 citations51