Inventor · disambiguated record
Wen-Chin Lee
Also filed as: LEE WEN C · LEE WEN-CHIN
102 granted patents·41 pending applications·3,359 citations·filing 1983–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG63LEE WEN-CHIN14KO CHIH-HSIN9FOXCONN ADVANCED TECH INC8TSMC SOLAR LTD8
Top patents by PatentIndex Score
143 records- 0198US7442967B2Strained channel complementary field-effect transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 28, 2008·91 cites·7 claims
- 0298US7112495B2Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 26, 2006·270 cites·71 claims
- 0398US6867433B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 15, 2005·321 cites·69 claims
- 0498US6413802B1Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufactureUNIV CALIFORNIA·Filed 2000·Granted Jul 2, 2002·1.2k cites·28 claims
- 0597US7834345B2Tunnel field-effect transistors with superlattice channelsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 16, 2010·57 cites·20 claims
- 0697US7052964B2Strained channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 30, 2006·48 cites·46 claims
- 0796US6921913B2Strained-channel transistor structure with lattice-mismatched zoneTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 26, 2005·104 cites·32 claims
- 0896US6882025B2Strained-channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 19, 2005·111 cites·66 claims
- 0995US6902965B2Strained silicon structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 7, 2005·85 cites·23 claims
- 1095US6900502B2Strained channel on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 31, 2005·120 cites·50 claims
- 1194US10962713B2Optical waveguide structureIND TECH RES INST·Filed 2019·Granted Mar 30, 2021·10 cites·13 claims
- 1294US7355262B2Diffusion topography engineering for high performance CMOS fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 8, 2008·34 cites·16 claims
- 1394US7268024B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 11, 2007·80 cites·26 claims
- 1493US7466008B2BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 16, 2008·35 cites·20 claims
- 1593US7176537B2High performance CMOS with metal-gate and Schottky source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 13, 2007·21 cites·15 claims
- 1693US7101742B2Strained channel complementary field-effect transistors and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 5, 2006·59 cites·71 claims
- 1792US8304841B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofXU JEFF J·Filed 2010·Granted Nov 6, 2012·22 cites·20 claims
- 1892US6911379B2Method of forming strained silicon on insulator substrateTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 28, 2005·68 cites·84 claims
- 1991US7646068B2Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 12, 2010·15 cites·20 claims
- 2089US8546176B2Forming chalcogenide semiconductor absorbersLEE WEN-CHIN·Filed 2010·Granted Oct 1, 2013·8 cites·22 claims
- 2188US7737532B2Hybrid Schottky source-drain CMOS for high mobility and low barrierTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 15, 2010·15 cites·20 claims
- 2288US7112483B2Method for forming a device having multiple silicide typesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 26, 2006·40 cites·22 claims
- 2388US7029994B2Strained channel on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 18, 2006·15 cites·24 claims
- 2487US8426298B2CMOS devices with Schottky source and drain regionsKO CHIH-HSIN·Filed 2011·Granted Apr 23, 2013·7 cites·14 claims
- 2587US7928474B2Forming embedded dielectric layers adjacent to sidewalls of shallow trench isolation regionsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Apr 19, 2011·15 cites·14 claims
- 2686US8703524B1Indium sputtering method and materials for chalcopyrite-based material usable as solar cell absorber layersTSMC SOLAR LTD·Filed 2012·Granted Apr 22, 2014·3 cites·10 claims
- 2786US8211267B2Electromagnetic shielding composite and method for making the sameLIN CHENG-HSIEN·Filed 2008·Granted Jul 3, 2012·15 cites·14 claims
- 2886US6924181B2Strained silicon layer semiconductor product employing strained insulator layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·38 cites·16 claims
- 2985US8530263B2Superstrate solar cellLEE WEN-CHIN·Filed 2011·Granted Sep 10, 2013·4 cites·20 claims
- 3083US8030210B2Contact barrier structure and manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 4, 2011·6 cites·14 claims
- 3183US7459756B2Method for forming a device having multiple silicide typesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 2, 2008·8 cites·31 claims
- 3283US6949443B2High performance semiconductor devices fabricated with strain-induced processes and methods for making sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 27, 2005·27 cites·14 claims
- 3382US8669163B2Tunnel field-effect transistors with superlattice channelsBHUWALKA KRISHNA KUMAR·Filed 2010·Granted Mar 11, 2014·5 cites·19 claims
- 3481US7488428B2Method for forming stacked via-holes in printed circuit boardsFOXCONN ADVANCED TECH INC·Filed 2006·Granted Feb 10, 2009·9 cites·20 claims
- 3580US9166094B2Method for forming solar cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 20, 2015·2 cites·15 claims
- 3680US8569146B2Isolation structure for strained channel transistorsKO CHIH-HSIN·Filed 2011·Granted Oct 29, 2013·4 cites·20 claims
- 3780US7592619B2Epitaxy layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 22, 2009·14 cites·10 claims
- 3880US7394136B2High performance semiconductor devices fabricated with strain-induced processes and methods for making sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 1, 2008·7 cites·1 claims
- 3980US7183593B2Heterostructure resistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 27, 2007·26 cites·36 claims
- 4080US7112848B2Thin channel MOSFET with source/drain stressorsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 26, 2006·25 cites·17 claims
- 4179US8236658B2Methods for forming a transistor with a strained channelKUAN TA-MING·Filed 2009·Granted Aug 7, 2012·9 cites·21 claims
- 4279US7807546B2SRAM cell having stepped boundary regions and methods of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 5, 2010·5 cites·4 claims
- 4379US7354830B2Methods of forming semiconductor devices with high-k gate dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 8, 2008·7 cites·28 claims
- 4478US8846438B2Method for indium sputtering and for forming chalcopyrite-based solar cell absorber layersTSMC SOLAR LTD·Filed 2014·Granted Sep 30, 2014·1 cites·20 claims
- 4578US7709903B2Contact barrier structure and manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 4, 2010·6 cites·18 claims
- 4678US7667247B2Method for passivating gate dielectric filmsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 23, 2010·7 cites·20 claims
- 4778US7358571B2Isolation spacer for thin SOI devicesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 15, 2008·17 cites·8 claims
- 4877US8466505B2Multi-level flash memory cell capable of fast programmingLAI LI-SHYUE·Filed 2005·Granted Jun 18, 2013·7 cites·12 claims
- 4977US7528044B2CMOSFET with hybrid-strained channelsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 5, 2009·5 cites·6 claims
- 5076US8796063B2Superstrate solar cellTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·1 cites·20 claims
Showing the top 50 of 143 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →