Inventor · disambiguated record
Yoo-Sang Hwang
Also filed as: HWANG YOO-SANG
91 granted patents·6 pending applications·805 citations·filing 1998–2022
99Inventor score
Top patents by PatentIndex Score
97 records- 0198US11482285B2Integrated circuit devices and methods of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 25, 2022·6 cites·5 claims
- 0297US11121134B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 14, 2021·7 cites·20 claims
- 0396US11594538B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 28, 2023·4 cites·20 claims
- 0495US9634012B2Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 25, 2017·15 cites·20 claims
- 0595US9419000B2Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devicesKIM DAE-IK·Filed 2014·Granted Aug 16, 2016·17 cites·20 claims
- 0694US9012321B1Method of manufacturing semiconductor deviceKIM DAE-IK·Filed 2014·Granted Apr 21, 2015·18 cites·20 claims
- 0793US10468103B2Integrated circuit devices including separate memory cells on separate regions of individual substrateKIM SUNG WOO·Filed 2017·Granted Nov 5, 2019·8 cites·6 claims
- 0893US8552472B2Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the sameKIM HUI-JUNG·Filed 2011·Granted Oct 8, 2013·20 cites·18 claims
- 0992US9953981B2Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 24, 2018·7 cites·11 claims
- 1091US8884340B2Semiconductor devices including dual gate electrode structures and related methodsKIM JI-YOUNG·Filed 2011·Granted Nov 11, 2014·13 cites·19 claims
- 1190US10573652B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 25, 2020·7 cites·10 claims
- 1290US10515798B2Method of fabricating device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 1390US8742493B2Semiconductor devices having vertical channel transistors and methods for fabricating the sameKIM DAE-IK·Filed 2011·Granted Jun 3, 2014·12 cites·12 claims
- 1489US10332831B2Semiconductor device including a bit lineSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·7 cites·14 claims
- 1589US9576902B2Semiconductor device including landing padSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 21, 2017·5 cites·8 claims
- 1689US6613621B2Methods of forming self-aligned contact pads using a damascene gate processSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 2, 2003·71 cites·18 claims
- 1789US6489195B1Method for fabricating DRAM cell using a protection layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 3, 2002·48 cites·9 claims
- 1888US10580876B2Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·6 cites·19 claims
- 1988US9559103B2Memory device including selectively disposed landing pads expanded over signal lineSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·6 cites·20 claims
- 2088US9159730B2Methods for fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 13, 2015·11 cites·20 claims
- 2187US11342331B2Semiconductor device including an air spacer and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 2287US10665498B2Semiconductor device having air gap spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 26, 2020·5 cites·5 claims
- 2387US6548853B1Cylindrical capacitors having a stepped sidewall and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 15, 2003·50 cites·3 claims
- 2485US9437560B2Semiconductor device including landing padSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 6, 2016·4 cites·11 claims
- 2585US6764941B2Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 20, 2004·33 cites·8 claims
- 2684US9570510B2Magnetoresistive random access memory devices and methods of manufacturing the sameKIM EUN-JUNG·Filed 2015·Granted Feb 14, 2017·6 cites·20 claims
- 2783US9276074B2Methods of fabricating semiconductor devices having buried channel arrayCHOI JAY-BOK·Filed 2013·Granted Mar 1, 2016·8 cites·12 claims
- 2883US7749834B2Method of fabricating semiconductor devices having buried contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 6, 2010·16 cites·24 claims
- 2980US11251307B2Device comprising 2D materialSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 15, 2022·2 cites·20 claims
- 3080US7176552B2Semiconductor memory device having a decoupling capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 13, 2007·8 cites·15 claims
- 3180US7026208B2Methods of forming integrated circuit devices including cylindrical capacitors having supporters between lower electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 11, 2006·28 cites·17 claims
- 3279US6479343B1DRAM cell capacitor and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 12, 2002·26 cites·14 claims
- 3378US9337151B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 10, 2016·4 cites·16 claims
- 3478US6929999B2Method of manufacturing semiconductor device with contact body extending in direction of bit line to contact storage nodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 16, 2005·25 cites·25 claims
- 3577US8492832B2Semiconductor deviceKIM JI-YOUNG·Filed 2012·Granted Jul 23, 2013·4 cites·16 claims
- 3677US8362536B2Semiconductor device having vertical channel transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 29, 2013·4 cites·30 claims
- 3776US10818671B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·2 cites·17 claims
- 3876US9972527B2Semiconductor device including air spacerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 15, 2018·4 cites·19 claims
- 3975US10600646B2Method of fabricating device including two-dimensional materialSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·1 cites·14 claims
- 4075US9117696B2Semiconductor devices having balancing capacitor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 25, 2015·5 cites·19 claims
- 4175US7078292B2Storage node contact forming method and structure for use in semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 18, 2006·20 cites·24 claims
- 4275US6534813B1Semiconductor device having a self-aligned contact structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 18, 2003·19 cites·9 claims
- 4375US6518671B1Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 11, 2003·18 cites·6 claims
- 4474US9601420B2Semiconductor device and method of manufacturing the sameHWANG YOO-SANG·Filed 2013·Granted Mar 21, 2017·5 cites·20 claims
- 4574US9461051B2Methods of forming electronic devices having pads using first and second masksPARK JE-MIN·Filed 2015·Granted Oct 4, 2016·2 cites·22 claims
- 4674US8785998B2Semiconductor device having vertical channel transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 22, 2014·3 cites·22 claims
- 4773US10910382B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·1 cites·20 claims
- 4873US10510759B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·16 claims
- 4973US6720269B2Semiconductor device having a self-aligned contact structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 13, 2004·17 cites·24 claims
- 5072US10629600B2Integrated circuit device including a support pattern, a lower electrode pattern, a dielectric structure, and an upper electrode structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·1 cites·17 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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