Inventor · disambiguated record
Giuseppe Corda
Also filed as: CORDA GIUSEPPE
12 granted patents·2 pending applications·639 citations·filing 1979–2022
93Inventor score
Files withATES COMPONENTI ELETTRON4SGS MICROELETTRONICA SPA3SGS THOMSON MICROELECTRONICS3GIVAUDAN SA2SGS THOMSON MICROELLECTRONICS1
Top patents by PatentIndex Score
14 records- 0196US4357685AMethod of programming an electrically alterable nonvolatile memoryATES COMPONENTI ELETTRON·Filed 1980·Granted Nov 2, 1982·341 cites·5 claims
- 0295US4931847AFloating gate memory with sidewall tunnelling areaSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Jun 5, 1990·107 cites·11 claims
- 0380US4412311AStorage cell for nonvolatile electrically alterable memoryATES COMPONENTI ELETTRON·Filed 1981·Granted Oct 25, 1983·63 cites·7 claims
- 0478US4935790AEEPROM memory cell with a single level of polysilicon programmable and erasable bit by bitSGS MICROELETTRONICA SPA·Filed 1987·Granted Jun 19, 1990·36 cites·5 claims
- 0577US4703552AFabricating a CMOS transistor having low threshold voltages using self-aligned silicide polysilicon gates and silicide interconnect regionsSGS MICROELETTRONICA SPA·Filed 1985·Granted Nov 3, 1987·35 cites·5 claims
- 0671US2024373892A1Flavour compositionGIVAUDAN SA·Filed 2022·Application pending·0 cites
- 0766US4792925AEprom memory matrix with symmetrical elementary MOS cells and writing method thereforSGS MICROELETTRONICA SPA·Filed 1985·Granted Dec 20, 1988·23 cites·4 claims
- 0850US5322803AProcess for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cellsSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Jun 21, 1994·13 cites·4 claims
- 0943US2017181454A1Flavour compositionGIVAUDAN SA·Filed 2015·Application pending·0 cites
- 1038US5081057AElectrically alterable, nonvolatile, floating gate type memory device with reduced tunnelling area and fabrication thereofSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Jan 14, 1992·6 cites·3 claims
- 1135USRE37308EEEPROM memory cell with a single level of polysilicon programmable and erasable bit by bitST MICROELECTRONICS SRL·Filed 1995·Granted Aug 7, 2001·4 cites·9 claims
- 1234US4315239AProcess for producing a calibrated resistance element and integrated circuitry incorporating sameATES COMPONENTI ELETTRON·Filed 1980·Granted Feb 9, 1982·5 cites·6 claims
- 1332US4310571AProcess for producing a calibrated resistance elementATES COMPONENTI ELETTRON·Filed 1979·Granted Jan 12, 1982·3 cites·10 claims
- 1426US4896295AEprom memory cell with two symmetrical half-cells and separate floating gatesSGS THOMSON MICROELLECTRONICS·Filed 1988·Granted Jan 23, 1990·3 cites·2 claims
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