Inventor · disambiguated record
Ted Johansson
Also filed as: JOHANSSON TED
35 granted patents·6 pending applications·377 citations·filing 1994–2017
97Inventor score
Files withERICSSON TELEFON AB L M21INFINEON TECHNOLOGIES AG14ERICSSON GE MOBILE INC1TELEFONAKTIEBOLAGET L M ERRICS1
Top patents by PatentIndex Score
41 records- 0182US7618865B2Method in the fabrication of a monolithically integrated vertical device on an SOI substrateINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 17, 2009·8 cites·21 claims
- 0282US6440810B1Method in the fabrication of a silicon bipolar transistorERICSSON TELEFON AB L M·Filed 2000·Granted Aug 27, 2002·32 cites·29 claims
- 0381US6720229B2Integrated circuit inductor structure and non-destructive etch depth measurementERICSSON TELEFON AB L M·Filed 2001·Granted Apr 13, 2004·33 cites·23 claims
- 0476US6413835B1Semiconductor structure and fabrication method of shallow and deep trenchesERICSSON TELEFON AB L M·Filed 2000·Granted Jul 2, 2002·21 cites·16 claims
- 0575US6459140B1Indium-enhanced bipolar transistorERICSSON TELEFON AB L M·Filed 2000·Granted Oct 1, 2002·18 cites·18 claims
- 0669US6690080B2Semiconductor structure for isolation of semiconductor devicesERICSSON TELEFON AB L M·Filed 2002·Granted Feb 10, 2004·14 cites·20 claims
- 0769US6483170B2RF power transistorERICSSON TELEFON AB L M·Filed 2001·Granted Nov 19, 2002·13 cites·5 claims
- 0867US6953981B1Semiconductor device with deep substrates contactsERICSSON TELEFON AB L M·Filed 2000·Granted Oct 11, 2005·16 cites·12 claims
- 0966US7119415B2Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereofINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 10, 2006·12 cites·13 claims
- 1065US7456069B2Method in the fabrication of an integrated injection logic circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 25, 2008·3 cites·18 claims
- 1164US7871881B2Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitorINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jan 18, 2011·2 cites·13 claims
- 1264US7008851B2Silicon-germanium mesa transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 7, 2006·11 cites·15 claims
- 1362US6329259B1Collector-up RF power transistorERICSSON TELEFON AB L M·Filed 2000·Granted Dec 11, 2001·10 cites·11 claims
- 1460US7217609B2Semiconductor fabrication process, lateral PNP transistor, and integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 15, 2007·9 cites·14 claims
- 1559US7682919B2Semiconductor process and PMOS varactorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 23, 2010·8 cites·26 claims
- 1659US5907180ABallast monitoring for radio frequency power transistorsERICSSON TELEFON AB L M·Filed 1997·Granted May 25, 1999·25 cites·3 claims
- 1757US6313001B1Method for semiconductor manufacturingERICSSON TELEFON AB L M·Filed 1999·Granted Nov 6, 2001·16 cites·5 claims
- 1857US5587333ACapacitor in an integrated function block or an integrated circuit having high capacitance, a method for manufacturing said capacitor and utilizing of said capacitor as an integrated decoupling capacitorERICSSON TELEFON AB L M·Filed 1995·Granted Dec 24, 1996·17 cites·20 claims
- 1957US5488252ALayout for radio frequency power transistorsTELEFONAKTIEBOLAGET L M ERRICS·Filed 1994·Granted Jan 30, 1996·30 cites·8 claims
- 2055US7025615B2Fabrication method, varactor, and integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 11, 2006·7 cites·21 claims
- 2152US6852638B2Selective base etchingINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 8, 2005·3 cites·31 claims
- 2252US6365918B1Method and device for interconnected radio frequency power SiC field effect transistorsERICSSON TELEFON AB L M·Filed 1999·Granted Apr 2, 2002·17 cites·9 claims
- 2352US6114930AImpedance controlled by the phase angle between two signalsERICSSON TELEFON AB L M·Filed 1998·Granted Sep 5, 2000·12 cites·40 claims
- 2452US5606197AHigh capacitance capacitor in an integrated function block or an integrated circuitERICSSON TELEFON AB L M·Filed 1995·Granted Feb 25, 1997·13 cites·11 claims
- 2552US2010055860A1Semiconductor Process and Integrated CircuitINFINEON TECHNOLOGIES AG·Filed 2009·Application pending·0 cites
- 2649US7534685B2Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitorINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 19, 2009·0 cites·7 claims
- 2749US6239475B1Vertical bipolar transistor having a field shield between the metallic interconnecting layer and the insulation oxideERICSSON TELEFON AB L M·Filed 2000·Granted May 29, 2001·3 cites·7 claims
- 2848US6340618B1RF power transistorERICSSON TELEFON AB L M·Filed 2000·Granted Jan 22, 2002·2 cites·6 claims
- 2947US6579773B2Transistor device and fabrication method thereofERICSSON TELEFON AB L M·Filed 2001·Granted Jun 17, 2003·3 cites·22 claims
- 3045US11463970B2Wireless reference signal distributionERICSSON TELEFON AB L M·Filed 2017·Granted Oct 4, 2022·0 cites·20 claims
- 3142US6884703B2Manufacturing of a low-noise mos deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 26, 2005·1 cites·12 claims
- 3240US6911368B2Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangementINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jun 28, 2005·0 cites·5 claims
- 3339US5684326AEmitter ballast bypass for radio frequency power transistorsERICSSON TELEFON AB L M·Filed 1995·Granted Nov 4, 1997·6 cites·10 claims
- 3439US2006186511A1Monolithically integrated capacitor and method for manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 3538US2005020003A1Semiconductor process and integrated circuitFiled 2003·Application pending·0 cites
- 3637US6077753AMethod for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxideERICSSON TELEFON AB L M·Filed 1998·Granted Jun 20, 2000·4 cites·11 claims
- 3736US2005087834A1High frequency power transistor device, integrated circuit, and fabrication method thereofFiled 2004·Application pending·0 cites
- 3835US6198156B1Bipolar power transistors and manufacturing methodERICSSON TELEFON AB L M·Filed 1998·Granted Mar 6, 2001·7 cites·15 claims
- 3933US2001005608A1Method for semiconductor manufacturingFiled 2001·Application pending·0 cites
- 4033US2001016421A1Bipolar transistor structureFiled 2000·Application pending·0 cites
- 4125US5804867AThermally balanced radio frequency power transistorERICSSON GE MOBILE INC·Filed 1996·Granted Sep 8, 1998·1 cites·5 claims
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