Inventor · disambiguated record
Shu-Wei Chung
Also filed as: CHUNG SHU-WEI · CHUNG SHU-WEI VANESSA
14 granted patents·5 pending applications·157 citations·filing 2009–2024
89Inventor score
Top patents by PatentIndex Score
19 records- 0196US8173499B2Method of fabricating a gate stack integration of complementary MOS deviceCHUNG SHU-WEI·Filed 2010·Granted May 8, 2012·123 cites·18 claims
- 0293US8350327B2High voltage device with reduced leakageTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 8, 2013·24 cites·19 claims
- 0384US12073165B2Standard cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·1 cites·20 claims
- 0480US11495558B2Integrated circuit features with obtuse angles and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·1 cites·20 claims
- 0578US8373219B2Method of fabricating a gate stack integration of complementary MOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 12, 2013·4 cites·17 claims
- 0677US11503711B2Method for inserting dummy capacitor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 0773US2024362392A1Standard cell designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0873US2024387518A1Capacitor in nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0972US2024363561A1Integrated circuit features with obtuse angles and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1071US12087715B2Integrated circuit features with obtuse angles and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 1169US8450808B1HVMOS devices and methods for forming the sameCHUNG SHU-WEI·Filed 2012·Granted May 28, 2013·3 cites·20 claims
- 1268US12094872B2Capacitor in nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 1363US11967550B2Semiconductor structure with via extending across adjacent conductive lines and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 23, 2024·0 cites·20 claims
- 1463US2022357949A1Dummy Insertion MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1556US2024387537A1Integrated circuit driver device, layout, and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1655US8951872B2High voltage device with reduced leakageTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 10, 2015·0 cites·20 claims
- 1754US10861807B2Integrated circuit features with obtuse angles and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 1853US8664719B2High voltage device with reduced leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 4, 2014·0 cites·20 claims
- 1943US9570584B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·0 cites·18 claims
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