Inventor · disambiguated record
Augusto Benvenuti
Also filed as: BENVENUTI AUGUSTO
24 granted patents·6 pending applications·111 citations·filing 2003–2025
94Inventor score
Files withMICRON TECHNOLOGY INC18PELLIZZER FABIO4PIROVANO AGOSTINO2ST MICROELECTRONICS SRL2BEDESCHI FERDINANDO1
Top patents by PatentIndex Score
30 records- 0191US7483296B2Memory device with unipolar and bipolar selectorsBEDESCHI FERDINANDO·Filed 2005·Granted Jan 27, 2009·28 cites·24 claims
- 0288US11417396B2Sequential voltage ramp-down of access lines of non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·2 cites·18 claims
- 0388US10839927B1Apparatus and methods for mitigating program disturbMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 17, 2020·7 cites·25 claims
- 0488US8243497B1Phase change memory device with reduced programming disturbancePELLIZZER FABIO·Filed 2009·Granted Aug 14, 2012·18 cites·21 claims
- 0586US11200958B2Memories for mitigating program disturbMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 14, 2021·2 cites·22 claims
- 0683US7985959B2Self-aligned vertical bipolar junction transistor for phase change memoriesINTEL CORP·Filed 2008·Granted Jul 26, 2011·8 cites·26 claims
- 0782US10803948B2Sequential voltage ramp-down of access lines of non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 13, 2020·4 cites·12 claims
- 0880US11201167B2Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 14, 2021·2 cites·29 claims
- 0978US9111857B2Method, system and device for recessed contact in memory arrayMICRON TECHNOLOGY INC·Filed 2012·Granted Aug 18, 2015·3 cites·12 claims
- 1078US7847373B2Fabricating bipolar junction select transistors for semiconductor memoriesPIROVANO AGOSTINO·Filed 2008·Granted Dec 7, 2010·6 cites·15 claims
- 1178US6989580B2Process for manufacturing an array of cells including selection bipolar junction transistorsOVONYX INC·Filed 2003·Granted Jan 24, 2006·21 cites·28 claims
- 1275US2025140324A1Erasing memoryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1374US12190961B2Erasing memoryMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1474US11011236B2Erasing memoryMICRON TECHNOLOGY INC·Filed 2019·Granted May 18, 2021·2 cites·20 claims
- 1571US12170324B2Transistors and arrays of elevationally-extending strings of memory cellsLODESTAR LICENSING GROUP LLC·Filed 2022·Granted Dec 17, 2024·0 cites·19 claims
- 1671US11790991B2Sequential voltage ramp-down of access lines of non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 1769US9634063B2Method, system and device for recessed contact in memory arrayMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 25, 2017·1 cites·19 claims
- 1869US7875513B2Self-aligned bipolar junction transistorsPELLIZZER FABIO·Filed 2006·Granted Jan 25, 2011·3 cites·6 claims
- 1968US11616079B2Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·0 cites·25 claims
- 2068US11538919B2Transistors and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2168US11514987B2Erasing memoryMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 29, 2022·0 cites·29 claims
- 2268US8076211B2Fabricating bipolar junction select transistors for semiconductor memoriesPIROVANO AGOSTINO·Filed 2010·Granted Dec 13, 2011·2 cites·10 claims
- 2365US11715536B2Apparatus for mitigating program disturbMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 2462US7563684B2Process for manufacturing an array of cells including selection bipolar junction transistorsPELLIZZER FABIO·Filed 2005·Granted Jul 21, 2009·2 cites·23 claims
- 2550US2024069749A1Asymmetric pass through voltage for reduction of cell-to-cell interferenceMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2645US7872326B2Array of vertical bipolar junction transistors, in particular selectors in a phase change memory deviceST MICROELECTRONICS SRL·Filed 2008·Granted Jan 18, 2011·0 cites·21 claims
- 2745US2022271127A1Transistors And Arrays Of Elevationally-Extending Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2845US2009014709A1Process for manufacturing an array of cells including selection bipolar junction transistors with projecting conduction regionsST MICROELECTRONICS SRL·Filed 2008·Application pending·0 cites
- 2944US2011084247A1Self-Aligned Bipolar Junction TransistorsPELLIZZER FABIO·Filed 2010·Application pending·0 cites
- 3036US2014269046A1Apparatuses and methods for use in selecting or isolating memory cellsMICRON TECHNOLOGY INC·Filed 2013·Application pending·0 cites
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