Inventor · disambiguated record
Francois Andrieu
Also filed as: ANDRIEU FRANCOIS · ANDRIEU FRANÇOIS
29 granted patents·5 pending applications·53 citations·filing 1991–2022
93Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE24ST MICROELECTRONICS CROLLES 2 SAS4ST MICROELECTRONICS CROLLES 22ANDRIEU FRANÇOIS1COMM A L EN ATOMIQUE ET AUX EN ALT1
Top patents by PatentIndex Score
34 records- 0182US5140289ACombined microwave and optic rotary jointTHOMSON CSF·Filed 1991·Granted Aug 18, 1992·40 cites·7 claims
- 0275US9520330B2Integrated circuit comprising PMOS transistors with different voltage thresholdsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Dec 13, 2016·3 cites·11 claims
- 0374US9558957B2Method for manufacturing a substrate provided with different active areas and with planar and three-dimensional transistorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jan 31, 2017·3 cites·13 claims
- 0469US9214515B2Method for making a semiconductor structure with a buried ground planeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Dec 15, 2015·2 cites·14 claims
- 0566US9985029B2Integrated circuit with NMOS and PMOS transistors having different threshold voltages through channel doping and gate material work function schemesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted May 29, 2018·1 cites·13 claims
- 0665US10263110B2Method of forming strained MOS transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Apr 16, 2019·1 cites·10 claims
- 0760US8853023B2Method for stressing a thin pattern and transistor fabrication method incorporating said methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Oct 7, 2014·1 cites·13 claims
- 0855US10777680B2Integrated circuit chip with strained NMOS and PMOS transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Sep 15, 2020·0 cites·17 claims
- 0952US11631609B2Method for manufacturing a microelectronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Apr 18, 2023·0 cites·17 claims
- 1051US10418486B2Integrated circuit chip with strained NMOS and PMOS transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Sep 17, 2019·0 cites·24 claims
- 1150US11889704B2Device comprising wrap-gate transistors and method of manufacturing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jan 30, 2024·0 cites·7 claims
- 1250US2022148908A1Method for forming a useful substrate trapping structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1349US11532670B23D memory and manufacturing processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Dec 20, 2022·0 cites·15 claims
- 1448US11011425B2Production of a 3D circuit with upper level transistor provided with a gate dielectric derived from a substrate transferCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted May 18, 2021·0 cites·21 claims
- 1548US8809964B2Method of adjusting the threshold voltage of a transistor by a buried trapping layerANDRIEU FRANÇOIS·Filed 2009·Granted Aug 19, 2014·1 cites·20 claims
- 1648US8501588B2Method for making a semiconductor structure with a buried ground planeLE TIEC YANNICK·Filed 2009·Granted Aug 6, 2013·0 cites·16 claims
- 1747US11810789B2Method of fabricating a semiconductor substrate having a stressed semiconductor regionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Nov 7, 2023·0 cites·20 claims
- 1847US11139209B23D circuit provided with mesa isolation for the ground plane zoneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Oct 5, 2021·0 cites·8 claims
- 1947US10651202B23D circuit transistors with flipped gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted May 12, 2020·0 cites·12 claims
- 2047US2015097241A1Method for relaxing the transverse mechanical stresses within the active region of a mos transistor, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2·Filed 2014·Application pending·0 cites
- 2146US10741565B23D SRAM circuit with double gate transistors with improved layoutCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Aug 11, 2020·0 cites·18 claims
- 2246US2023413581A1Device for driving transistors and method of drivingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 2344US11888007B2Image sensor formed in sequential 3D technologyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jan 30, 2024·0 cites·15 claims
- 2444US11024544B2Assembly for 3D circuit with superposed transistor levelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jun 1, 2021·0 cites·23 claims
- 2544US7820523B2Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Oct 26, 2010·1 cites·23 claims
- 2643US11653506B2Resistive 3D memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted May 16, 2023·0 cites·24 claims
- 2741US10446548B2Integrated circuit including balanced cells limiting an active areaCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Oct 15, 2019·0 cites·10 claims
- 2841US2016099183A1Method for relaxing the transverse mechanical stresses within the active region of a mos transistor, and corresponding integrated circuitST MICROELECTRONICS CROLLES 2·Filed 2015·Application pending·0 cites
- 2940US10546929B2Optimized double-gate transistors and fabricating processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jan 28, 2020·0 cites·19 claims
- 3040US10504897B2Integrated circuit comprising balanced cells at the activeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Dec 10, 2019·0 cites·13 claims
- 3140US9147750B2Process for fabricating a transistor comprising nanoscale semiconductor features using block copolymersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Sep 29, 2015·0 cites·16 claims
- 3236US9514996B2Process for fabricating SOI transistors for an increased integration densityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 6, 2016·0 cites·18 claims
- 3336US2011156057A1Substrate of the semiconductor on insulator type with intrinsic and doped diamond layersCOMM A L EN ATOMIQUE ET AUX EN ALT·Filed 2009·Application pending·0 cites
- 3434US9876032B2Method of manufacturing a device with MOS transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Jan 23, 2018·0 cites·18 claims
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