Inventor · disambiguated record
Nicky C. Lu
Also filed as: CHAU-CHUN LU NICKY · LU NICKY · LU NICKY C · LU NICKY C-C
29 granted patents·1,832 citations·filing 1984–2017
98Inventor score
Top patents by PatentIndex Score
29 records- 0196US5107459AStacked bit-line architecture for high density cross-point memory cell arrayIBM·Filed 1990·Granted Apr 21, 1992·165 cites·14 claims
- 0296US4881105AIntegrated trench-transistor structure and fabrication processIBM·Filed 1988·Granted Nov 14, 1989·126 cites·11 claims
- 0395US5021355AMethod of fabricating cross-point lightly-doped drain-source trench transistorIBM·Filed 1990·Granted Jun 4, 1991·242 cites·5 claims
- 0493US4954854ACross-point lightly-doped drain-source trench transistor and fabrication process thereforIBM·Filed 1989·Granted Sep 4, 1990·131 cites·3 claims
- 0593US4922128ABoost clock circuit for driving redundant wordlines and sample wordlinesIBM·Filed 1989·Granted May 1, 1990·82 cites·9 claims
- 0693US4833516AHigh density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods thereforIBM·Filed 1987·Granted May 23, 1989·83 cites·4 claims
- 0793US4688063ADynamic ram cell with MOS trench capacitor in CMOSIBM·Filed 1986·Granted Aug 18, 1987·82 cites·46 claims
- 0893US4649625ADynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method thereforIBM·Filed 1985·Granted Mar 17, 1987·124 cites·7 claims
- 0992US4816706ASense amplifier with improved bitline precharging for dynamic random access memoryIBM·Filed 1987·Granted Mar 28, 1989·71 cites·9 claims
- 1090US6009023AHigh performance DRAM structure employing multiple thickness gate oxideETRON TECHNOLOGY INC·Filed 1998·Granted Dec 28, 1999·60 cites·12 claims
- 1189US4983544ASilicide bridge contact processIBM·Filed 1986·Granted Jan 8, 1991·103 cites·24 claims
- 1289US4816884AHigh density vertical trench transistor and capacitor memory cell structure and fabrication method thereforIBM·Filed 1987·Granted Mar 28, 1989·60 cites·3 claims
- 1388US6107134AHigh performance DRAM structure employing multiple thickness gate oxideETRON TECHNOLOGY INC·Filed 1999·Granted Aug 22, 2000·50 cites·17 claims
- 1488US5198995ATrench-capacitor-one-transistor storage cell and array for dynamic random access memoriesIBM·Filed 1990·Granted Mar 30, 1993·71 cites·8 claims
- 1587US4728623AFabrication method for forming a self-aligned contact window and connection in an epitaxial layer and device structures employing the methodIBM·Filed 1986·Granted Mar 1, 1988·80 cites·11 claims
- 1686US4910709AComplementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cellIBM·Filed 1988·Granted Mar 20, 1990·51 cites·6 claims
- 1780US4927779AComplementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process thereforIBM·Filed 1989·Granted May 22, 1990·38 cites·5 claims
- 1880US4639622ABoosting word-line clock circuit for semiconductor memoryIBM·Filed 1984·Granted Jan 27, 1987·39 cites·13 claims
- 1979US5395784AMethod of manufacturing low leakage and long retention time DRAMIND TECH RES INST·Filed 1993·Granted Mar 7, 1995·40 cites·15 claims
- 2078US4754433ADynamic ram having multiplexed twin I/O line pairsIBM·Filed 1986·Granted Jun 28, 1988·38 cites·11 claims
- 2178US4678941ABoost word-line clock and decoder-driver circuits in semiconductor memoriesIBM·Filed 1985·Granted Jul 7, 1987·36 cites·6 claims
- 2271US4954731AWordline voltage boosting circuits for complementary MOSFET dynamic memoriesIBM·Filed 1989·Granted Sep 4, 1990·27 cites·11 claims
- 2366US9164942B2High speed memory chip module and electronics system device with a high speed memory chip moduleETRON TECHNOLOGY INC·Filed 2012·Granted Oct 20, 2015·2 cites·31 claims
- 2460US6163047AMethod of fabricating a self aligned contact for a capacitor over bitline, (COB), memory cellVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Dec 19, 2000·17 cites·28 claims
- 2560US6097641AHigh performance DRAM structure employing multiple thickness gate oxideETRON TECHNOLOGY INC·Filed 1999·Granted Aug 1, 2000·13 cites·12 claims
- 2659US9105506B2Dynamic memory structureLU NICKY·Filed 2012·Granted Aug 11, 2015·1 cites·18 claims
- 2758US9935109B2Dynamic memory structureETRON TECH INC·Filed 2017·Granted Apr 3, 2018·0 cites·9 claims
- 2855US9685449B2Dynamic memory structureETRON TECH INC·Filed 2016·Granted Jun 20, 2017·0 cites·10 claims
- 2955US9397103B2Dynamic memory structureETRON TECHNOLOGY INC·Filed 2015·Granted Jul 19, 2016·0 cites·14 claims
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