Inventor · disambiguated record
Ilan Ben-Yaacov
Also filed as: BEN-YAACOV ILAN
20 granted patents·1 pending application·984 citations·filing 2008–2022
97Inventor score
Top patents by PatentIndex Score
21 records- 0199US8237198B2Semiconductor heterostructure diodesWU YIFENG·Filed 2011·Granted Aug 7, 2012·102 cites·15 claims
- 0299US7898004B2Semiconductor heterostructure diodesTRANSPHORM INC·Filed 2008·Granted Mar 1, 2011·139 cites·22 claims
- 0398US8519438B2Enhancement mode III-N HEMTsMISHRA UMESH·Filed 2008·Granted Aug 27, 2013·107 cites·58 claims
- 0498US7939391B2III-Nitride devices with recessed gatesTRANSPHORM INC·Filed 2010·Granted May 10, 2011·77 cites·18 claims
- 0598US7875907B2III-nitride bidirectional switchesTRANSPHORM INC·Filed 2008·Granted Jan 25, 2011·118 cites·36 claims
- 0698US7851825B2Insulated gate e-mode transistorsTRANSPHORM INC·Filed 2008·Granted Dec 14, 2010·124 cites·33 claims
- 0797US9437708B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2015·Granted Sep 6, 2016·16 cites·22 claims
- 0897US8841702B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2013·Granted Sep 23, 2014·25 cites·29 claims
- 0997US8541818B2Semiconductor heterostructure diodesWU YIFENG·Filed 2012·Granted Sep 24, 2013·30 cites·17 claims
- 1097US7795642B2III-nitride devices with recessed gatesTRANSPHORM INC·Filed 2008·Granted Sep 14, 2010·106 cites·18 claims
- 1196US9941399B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2016·Granted Apr 10, 2018·13 cites·8 claims
- 1296US9935190B2Forming enhancement mode III-nitride devicesTRANSPHORM INC·Filed 2016·Granted Apr 3, 2018·25 cites·12 claims
- 1396US9634100B2Semiconductor devices with integrated hole collectorsTRANSPHORM INC·Filed 2015·Granted Apr 25, 2017·12 cites·8 claims
- 1496US9196716B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2014·Granted Nov 24, 2015·18 cites·22 claims
- 1594US9318593B2Forming enhancement mode III-nitride devicesTRANSPHORM INC·Filed 2014·Granted Apr 19, 2016·18 cites·39 claims
- 1694US9184275B2Semiconductor devices with integrated hole collectorsMISHRA UMESH·Filed 2012·Granted Nov 10, 2015·18 cites·24 claims
- 1789US9041065B2Semiconductor heterostructure diodesTRANSPHORM INC·Filed 2013·Granted May 26, 2015·7 cites·32 claims
- 1888US8937338B2Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layerCHOWDHURY SRABANTI·Filed 2012·Granted Jan 20, 2015·16 cites·19 claims
- 1985US9432210B2System for monitor and control of equipmentZULI INC·Filed 2013·Granted Aug 30, 2016·11 cites·29 claims
- 2075US9590088B2Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layerUNIV CALIFORNIA·Filed 2014·Granted Mar 7, 2017·2 cites·23 claims
- 2159US2022183900A1Apparatus and method for applying compressionBEN YAACOV ILAN·Filed 2022·Application pending·0 cites
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