Inventor · disambiguated record
Robert Coffie
Also filed as: COFFIE ROBERT · COFFIE ROBERT L
24 granted patents·2 pending applications·651 citations·filing 2007–2022
97Inventor score
Files withTRANSPHORM INC12NORTHROP GRUMMAN SPACE & MSN3NORTHROP GRUMMAN SYSTEMS CORP3COFFIE ROBERT L2HEYING BENJAMIN2
Top patents by PatentIndex Score
26 records- 0198US8692294B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2013·Granted Apr 8, 2014·43 cites·51 claims
- 0298US8519438B2Enhancement mode III-N HEMTsMISHRA UMESH·Filed 2008·Granted Aug 27, 2013·107 cites·58 claims
- 0398US7851825B2Insulated gate e-mode transistorsTRANSPHORM INC·Filed 2008·Granted Dec 14, 2010·124 cites·33 claims
- 0497US9831315B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2016·Granted Nov 28, 2017·14 cites·28 claims
- 0597US9437708B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2015·Granted Sep 6, 2016·16 cites·22 claims
- 0697US9373699B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2015·Granted Jun 21, 2016·16 cites·45 claims
- 0797US8841702B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2013·Granted Sep 23, 2014·25 cites·29 claims
- 0897US8390000B2Semiconductor devices with field platesCHU RONGMING·Filed 2009·Granted Mar 5, 2013·73 cites·27 claims
- 0996US9941399B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2016·Granted Apr 10, 2018·13 cites·8 claims
- 1096US9196716B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2014·Granted Nov 24, 2015·18 cites·22 claims
- 1196US9111961B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2014·Granted Aug 18, 2015·15 cites·41 claims
- 1296US8624662B2Semiconductor electronic components and circuitsPARIKH PRIMIT·Filed 2010·Granted Jan 7, 2014·35 cites·45 claims
- 1396US8598937B2High power semiconductor electronic components with increased reliabilityLAL RAKESH K·Filed 2011·Granted Dec 3, 2013·55 cites·85 claims
- 1495US8860495B2Method of forming electronic components with increased reliabilityTRANSPHORM INC·Filed 2013·Granted Oct 14, 2014·17 cites·19 claims
- 1594US9171836B2Method of forming electronic components with increased reliabilityTRANSPHORM INC·Filed 2014·Granted Oct 27, 2015·15 cites·32 claims
- 1691US9293458B2Semiconductor electronic components and circuitsTRANSPHORM INC·Filed 2013·Granted Mar 22, 2016·12 cites·14 claims
- 1788US7897446B2Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layerNORTHROP GRUMMAN SYSTEMS CORP·Filed 2010·Granted Mar 1, 2011·12 cites·11 claims
- 1885US10109728B2Transistor structure including a scandium gallium nitride back-barrier layerCOFFIE ROBERT L·Filed 2017·Granted Oct 23, 2018·4 cites·21 claims
- 1985US7800132B2High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereofNORTHROP GRUMMAN SYSTEMS CORP·Filed 2007·Granted Sep 21, 2010·14 cites·9 claims
- 2079US7632726B2Method for fabricating a nitride FET including passivation layersNORTHROP GRUMMAN SPACE & MSN·Filed 2007·Granted Dec 15, 2009·10 cites·24 claims
- 2178US10367087B2Transistor structure including a scandium gallium nitride back-barrier layerCOFFIE ROBERT L·Filed 2018·Granted Jul 30, 2019·2 cites·20 claims
- 2275US7750370B2High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layerNORTHROP GRUMMAN SPACE & MSN·Filed 2007·Granted Jul 6, 2010·6 cites·7 claims
- 2361US8431962B2Composite passivation process for nitride FETHEYING BENJAMIN·Filed 2007·Granted Apr 30, 2013·4 cites·18 claims
- 2461US7608865B1Club extension to a T-gate high electron mobility transistorNORTHROP GRUMMAN SPACE & MSN·Filed 2008·Granted Oct 27, 2009·1 cites·12 claims
- 2554US2024234560A9Back-barrier for gallium nitride based high electron mobility transistorsNORTHROP GRUMMAN SYSTEMS CORP·Filed 2022·Application pending·0 cites
- 2636US2008199993A1Protective layer in device fabricationHEYING BENJAMIN·Filed 2007·Application pending·0 cites
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