Inventor · disambiguated record
Sang-Jin Hyun
Also filed as: HYUN SANG-JIN
93 granted patents·15 pending applications·751 citations·filing 2003–2023
99Inventor score
Top patents by PatentIndex Score
108 records- 0197US11411124B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 9, 2022·4 cites·20 claims
- 0296US10079210B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 18, 2018·32 cites·20 claims
- 0395US10714579B2Semiconductor devices including recessed source/drain silicides and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·11 cites·18 claims
- 0495US9337057B2Semiconductor device and method for fabricating the samePARK MOON-KYU·Filed 2015·Granted May 10, 2016·432 cites·20 claims
- 0594US10734280B2Integrated circuit devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·14 cites·14 claims
- 0694US10381490B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 13, 2019·8 cites·20 claims
- 0794US10283600B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 7, 2019·13 cites·20 claims
- 0893US9806075B2Integrated circuit devices having a Fin-type active region and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·9 cites·20 claims
- 0993US9780183B2Semiconductor devices having work function metal films and tuning materialsKIM WAN-DON·Filed 2016·Granted Oct 3, 2017·12 cites·20 claims
- 1090US10559687B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·7 cites·20 claims
- 1190US10312340B2Semiconductor devices having work function metal films and tuning materialsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·6 cites·20 claims
- 1290US8513740B2Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the samePARK HONG-BAE·Filed 2010·Granted Aug 20, 2013·18 cites·19 claims
- 1389US10566326B2Semiconductor devices including a device isolation region in a substrate and/or finSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 18, 2020·7 cites·14 claims
- 1489US8748251B2Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devicesNA HOON-JOO·Filed 2012·Granted Jun 10, 2014·10 cites·14 claims
- 1588US11799004B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 1688US11282939B2Semiconductor device including work function adjusting metal gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 22, 2022·4 cites·14 claims
- 1788US10923602B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 16, 2021·3 cites·20 claims
- 1888US10340358B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 2, 2019·6 cites·20 claims
- 1987US10600913B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·4 cites·20 claims
- 2086US8293599B2Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materialsNA HOON-JOO·Filed 2009·Granted Oct 23, 2012·12 cites·18 claims
- 2186US7972950B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·10 claims
- 2285US11296196B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 5, 2022·3 cites·20 claims
- 2385US10269629B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 2485US9240483B2Fin-type field effect transistors including aluminum doped metal-containing layerSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 19, 2016·10 cites·20 claims
- 2584US10879392B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·19 claims
- 2684US10128245B2Semiconductor devices including active areas with increased contact areaSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·4 cites·20 claims
- 2783US10686069B2Semiconductor device having vertical channelSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·5 cites·14 claims
- 2883US10593670B2Methods of manufacturing integrated circuit devices having a fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 17, 2020·3 cites·20 claims
- 2982US10847515B2Semiconductor devices with nanowires and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·19 claims
- 3082US10557198B2Gas distribution apparatus and substrate processing apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·3 cites·20 claims
- 3181US11949012B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 2, 2024·1 cites·20 claims
- 3281US9793368B2Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth elementSON HYEOK-JUN·Filed 2016·Granted Oct 17, 2017·5 cites·18 claims
- 3380US10529817B2Semiconductor devices having multi-threshold voltageSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 3480US10177149B2Semiconductor devices with nanowires and with metal layers having different grain sizesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 8, 2019·2 cites·19 claims
- 3579US12087833B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·15 claims
- 3679US11114544B2Integrated circuit device having fin-type activeSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 7, 2021·2 cites·18 claims
- 3779US10177042B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 8, 2019·3 cites·19 claims
- 3879US10134856B2Semiconductor device including contact plug and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·18 claims
- 3979US9287199B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceLEE HYE-LAN·Filed 2010·Granted Mar 15, 2016·6 cites·26 claims
- 4078US12284827B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·18 claims
- 4178US10580736B2Semiconductor device including conductive structure having nucleation structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 3, 2020·0 cites·19 claims
- 4278US10403717B2Semiconductor devices including contact structures that partially overlap silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·2 cites·20 claims
- 4377US11018050B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 25, 2021·2 cites·11 claims
- 4477US10756195B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·12 claims
- 4576US11784260B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 4676US8786028B2Semiconductor device and method of fabricating the sameHONG HYUNG-SEOK·Filed 2012·Granted Jul 22, 2014·5 cites·35 claims
- 4775US11955531B2Method of forming an integrated circuit device having a contact capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 4875US9543300B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 10, 2017·2 cites·30 claims
- 4975US9252058B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·3 cites·20 claims
- 5074US10366955B2Semiconductor device including conductive structure having nucleation structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 30, 2019·1 cites·20 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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