Inventor · disambiguated record
Liang Pang
Also filed as: PANG LIANG · PANG LIANG-TECK
67 granted patents·2 pending applications·1,016 citations·filing 2007–2018
99Inventor score
Top patents by PatentIndex Score
69 records- 0199US9812462B1Memory hole size variation in a 3D stacked memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·104 cites·11 claims
- 0299US9406693B1Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 2, 2016·66 cites·22 claims
- 0398US9460805B1Word line dependent channel pre-charge for memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 4, 2016·52 cites·20 claims
- 0497US10020314B1Forming memory cell film in stack openingSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 10, 2018·20 cites·17 claims
- 0597US9748266B1Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 29, 2017·21 cites·24 claims
- 0697US9715937B1Dynamic tuning of first read countermeasuresSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 25, 2017·29 cites·18 claims
- 0797US9620233B1Word line ramping down scheme to purge residual electronsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 11, 2017·35 cites·22 claims
- 0897US9490262B1Selective removal of charge-trapping layer for select gate transistor and dummy memory cells in 3D stacked memorySANDISK TECHNOLOGIES INC·Filed 2016·Granted Nov 8, 2016·18 cites·10 claims
- 0997US9466369B1Word line-dependent ramping of pass voltage and program voltage for three-dimensional memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 11, 2016·49 cites·21 claims
- 1097US8576000B23D chip stack skew reduction with resonant clock and inductive couplingKIM JAE-JOON·Filed 2011·Granted Nov 5, 2013·24 cites·5 claims
- 1196US9941293B1Select transistors with tight threshold voltage in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 10, 2018·12 cites·19 claims
- 1296US9831118B1Reducing neighboring word line in interference using low-k oxideSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·19 cites·20 claims
- 1396US9368509B2Three-dimensional memory structure having self-aligned drain regions and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jun 14, 2016·27 cites·8 claims
- 1496US9299450B1Adaptive increase in control gate voltage of a dummy memory cell to compensate for inadvertent programmingSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 29, 2016·25 cites·21 claims
- 1595US10128257B2Select transistors with tight threshold voltage in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 13, 2018·9 cites·20 claims
- 1695US9952944B1First read solution for memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 24, 2018·14 cites·13 claims
- 1795US9793283B1High conductivity channel for 3D memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 17, 2017·12 cites·19 claims
- 1895US9673216B1Method of forming memory cell filmSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 6, 2017·13 cites·20 claims
- 1994US9786378B1Equalizing erase depth in different blocks of memory cellsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 10, 2017·28 cites·20 claims
- 2094US9343141B2Reprogramming memory with single program pulse per data stateSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 17, 2016·19 cites·20 claims
- 2194US9230663B1Programming memory with reduced short-term charge lossSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·18 cites·25 claims
- 2293US9583198B1Word line-dependent and temperature-dependent pass voltage during programmingSANDISK TECHNOLOGIES INC·Filed 2016·Granted Feb 28, 2017·17 cites·19 claims
- 2393US8736342B1Changing resonant clock modesIBM·Filed 2012·Granted May 27, 2014·21 cites·23 claims
- 2492US10068657B1Detecting misalignment in memory array and adjusting read and verify timing parameters on sub-block and block levelsSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 4, 2018·13 cites·20 claims
- 2592US9830963B1Word line-dependent and temperature-dependent erase depthSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·14 cites·19 claims
- 2692US9406690B2Contact for vertical memory with dopant diffusion stopper and associated fabrication methodSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 2, 2016·14 cites·9 claims
- 2792US9343159B2Avoiding unintentional program or erase of a select gate transistorSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 17, 2016·15 cites·21 claims
- 2892US9230676B1Weak erase of a dummy memory cell to counteract inadvertent programmingSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 5, 2016·14 cites·23 claims
- 2992US8704576B1Variable resistance switch for wide bandwidth resonant global clock distributionIBM·Filed 2013·Granted Apr 22, 2014·20 cites·20 claims
- 3091US9984760B1Suppressing disturb of select gate transistors during erase in memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 29, 2018·11 cites·20 claims
- 3191US9666593B2Alternating refractive index in charge-trapping film in three-dimensional memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted May 30, 2017·8 cites·12 claims
- 3291US9607707B1Weak erase prior to readSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 28, 2017·13 cites·20 claims
- 3391US9349478B2Read with look-back combined with programming with asymmetric boosting in memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted May 24, 2016·15 cites·21 claims
- 3491US9165659B1Efficient reprogramming method for tightening a threshold voltage distribution in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 20, 2015·15 cites·19 claims
- 3590US10157676B2Dynamic tuning of first read countermeasuresSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 18, 2018·9 cites·17 claims
- 3690US10008277B2Block health monitoring using threshold voltage of dummy memory cellsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 26, 2018·11 cites·19 claims
- 3790US9299443B1Modifying program pulses based on inter-pulse period to reduce program noiseSANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 29, 2016·13 cites·23 claims
- 3890US8587357B2AC supply noise reduction in a 3D stack with voltage sensing and clock shiftingKIM JAE-JOON·Filed 2011·Granted Nov 19, 2013·13 cites·25 claims
- 3988US9859298B1Amorphous silicon layer in memory device which reduces neighboring word line interferenceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jan 2, 2018·5 cites·14 claims
- 4088US9852803B2Dummy word line control scheme for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2016·Granted Dec 26, 2017·9 cites·18 claims
- 4188US8525569B2Synchronizing global clocks in 3D stacks of integrated circuits by shorting the clock networkBUCELOT THOMAS J·Filed 2011·Granted Sep 3, 2013·16 cites·25 claims
- 4288US8466739B23D chip stack skew reduction with resonant clock and inductive couplingKIM JAE-JOON·Filed 2012·Granted Jun 18, 2013·11 cites·20 claims
- 4387US9911500B2Dummy voltage to reduce first read effect in memorySANDISK TECHNOLOGIES INC·Filed 2016·Granted Mar 6, 2018·8 cites·29 claims
- 4487US9595342B2Method and apparatus for refresh programming of memory cells based on amount of threshold voltage downshiftSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 14, 2017·9 cites·16 claims
- 4587US9543320B2Three-dimensional memory structure having self-aligned drain regions and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 10, 2017·4 cites·13 claims
- 4687US7668037B2Storage array including a local clock buffer with programmable timingIBM·Filed 2007·Granted Feb 23, 2010·18 cites·25 claims
- 4786US7409305B1Pulsed ring oscillator circuit for storage cell read timing evaluationIBM·Filed 2007·Granted Aug 5, 2008·11 cites·17 claims
- 4885US9437305B2Programming memory with reduced short-term charge lossSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 6, 2016·6 cites·20 claims
- 4985US9324419B2Multiple pass programming for memory with different program pulse widthsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 26, 2016·9 cites·21 claims
- 5085US9054682B2Wide bandwidth resonant global clock distributionIBM·Filed 2013·Granted Jun 9, 2015·7 cites·20 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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