Inventor · disambiguated record
Jan Boris Philipp
Also filed as: PHILIPP JAN · PHILIPP JAN B · PHILIPP JAN BORIS
82 granted patents·23 pending applications·1,142 citations·filing 2005–2025
99Inventor score
Files withQIMONDA AG27QIMONDA NORTH AMERICA CORP26INFINEON TECHNOLOGIES AG8PHILIPP JAN BORIS8HAPP THOMAS7
Top patents by PatentIndex Score
105 records- 0197US7514705B2Phase change memory cell with limited switchable volumeIBM·Filed 2006·Granted Apr 7, 2009·55 cites·13 claims
- 0297US7460394B2Phase change memory having temperature budget sensorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 2, 2008·59 cites·25 claims
- 0397US7417245B2Phase change memory having multilayer thermal insulationINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 26, 2008·59 cites·26 claims
- 0496US7372725B2Integrated circuit having resistive memoryINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 13, 2008·54 cites·37 claims
- 0595US8208294B2Resistive memory cell accessed using two bit linesHAPP THOMAS·Filed 2010·Granted Jun 26, 2012·21 cites·25 claims
- 0695US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 0795US7545668B2Mushroom phase change memory having a multilayer electrodeQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jun 9, 2009·36 cites·14 claims
- 0895US7453081B2Phase change memory cell including nanocomposite insulatorQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 18, 2008·37 cites·39 claims
- 0994US7932507B2Current constricting phase change memory element structureIBM·Filed 2010·Granted Apr 26, 2011·14 cites·14 claims
- 1094US7796424B2Memory device having drift compensated read operation and associated methodQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Sep 14, 2010·37 cites·10 claims
- 1194US7619917B2Memory cell with trigger elementQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 17, 2009·34 cites·31 claims
- 1294US7405964B2Integrated circuit to identify read disturb condition in memory cellQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Jul 29, 2008·35 cites·23 claims
- 1393US7838860B2Integrated circuit including vertical diodeQIMONDA AG·Filed 2007·Granted Nov 23, 2010·22 cites·35 claims
- 1493US7623401B2Semiconductor device including multi-bit memory cells and a temperature budget sensorQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 24, 2009·31 cites·35 claims
- 1592US7571901B2Circuit for programming a memory elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Aug 11, 2009·28 cites·35 claims
- 1691US7601995B2Integrated circuit having resistive memory cellsINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 13, 2009·19 cites·13 claims
- 1791US7593255B2Integrated circuit for programming a memory elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Sep 22, 2009·24 cites·22 claims
- 1890US7869257B2Integrated circuit including diode memory cellsQIMONDA AG·Filed 2007·Granted Jan 11, 2011·23 cites·27 claims
- 1990US7539050B2Resistive memory including refresh operationQIMONDA NORTH AMERICA CORP·Filed 2006·Granted May 26, 2009·23 cites·30 claims
- 2089US7719886B2Multi-level resistive memory cell using different crystallization speedsQIMONDA NORTH AMERICA CORP·Filed 2007·Granted May 18, 2010·20 cites·18 claims
- 2189US7714315B2Thermal isolation of phase change memory cellsQIMONDA NORTH AMERICA CORP·Filed 2006·Granted May 11, 2010·19 cites·16 claims
- 2289US7615770B2Integrated circuit having an insulated memoryINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 10, 2009·24 cites·5 claims
- 2388US8779495B2Stacked SONOS memoryHAPP THOMAS·Filed 2007·Granted Jul 15, 2014·17 cites·15 claims
- 2488US7679980B2Resistive memory including selective refresh operationQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Mar 16, 2010·18 cites·18 claims
- 2588US7457146B2Memory cell programmed using a temperature controlled set pulseQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 25, 2008·20 cites·23 claims
- 2687US7929336B2Integrated circuit including a memory element programmed using a seed pulseQIMONDA AG·Filed 2008·Granted Apr 19, 2011·21 cites·16 claims
- 2787US7910911B2Phase change memory with tapered heaterIBM·Filed 2009·Granted Mar 22, 2011·12 cites·10 claims
- 2887US7778070B2Memory with dynamic redundancy configurationQIMONDA AG·Filed 2008·Granted Aug 17, 2010·17 cites·9 claims
- 2987US7745807B2Current constricting phase change memory element structureIBM·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 3086US8305793B2Integrated circuit with an array of resistance changing memory cellsMAJEWSKI PETRA·Filed 2008·Granted Nov 6, 2012·24 cites·20 claims
- 3186US7646632B2Integrated circuit for setting a memory cell based on a reset current distributionQIMONDA AG·Filed 2007·Granted Jan 12, 2010·21 cites·23 claims
- 3285US7973384B2Phase change memory cell including multiple phase change material portionsQIMONDA AG·Filed 2005·Granted Jul 5, 2011·13 cites·20 claims
- 3384US7898847B2Method to prevent overresetQIMONDA AG·Filed 2007·Granted Mar 1, 2011·14 cites·22 claims
- 3483US7852657B2Multiple write configurations for a memory cellQIMONDA AG·Filed 2007·Granted Dec 14, 2010·14 cites·13 claims
- 3583US7646625B2Conditioning operations for memory cellsQIMONDA AG·Filed 2007·Granted Jan 12, 2010·14 cites·27 claims
- 3683US7345899B2Memory having storage locations within a common volume of phase change materialINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 18, 2008·12 cites·21 claims
- 3782US7825398B2Memory cell having improved mechanical stabilityMACRONIX INT CO LTD·Filed 2008·Granted Nov 2, 2010·7 cites·17 claims
- 3880US8017930B2Pillar phase change memory cellQIMONDA AG·Filed 2006·Granted Sep 13, 2011·8 cites·24 claims
- 3980US8003971B2Integrated circuit including memory element doped with dielectric materialQIMONDA AG·Filed 2008·Granted Aug 23, 2011·9 cites·21 claims
- 4080US7906368B2Phase change memory with tapered heaterIBM·Filed 2007·Granted Mar 15, 2011·8 cites·12 claims
- 4180US7759770B2Integrated circuit including memory element with high speed low current phase change materialQIMONDA AG·Filed 2008·Granted Jul 20, 2010·9 cites·9 claims
- 4280US7679074B2Integrated circuit having multilayer electrodeQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Mar 16, 2010·5 cites·25 claims
- 4379US7916524B2Program method with locally optimized write parametersQIMONDA AG·Filed 2007·Granted Mar 29, 2011·11 cites·14 claims
- 4479US7619936B2System that prevents reduction in data retentionQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 17, 2009·8 cites·36 claims
- 4578US7564710B2Circuit for programming a memory elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jul 21, 2009·10 cites·29 claims
- 4677US7863593B2Integrated circuit including force-filled resistivity changing materialQIMONDA AG·Filed 2007·Granted Jan 4, 2011·10 cites·6 claims
- 4775US7679950B2Integrated circuit having a switchINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 16, 2010·9 cites·32 claims
- 4875US7671354B2Integrated circuit including spacer defined electrodeQIMONDA AG·Filed 2007·Granted Mar 2, 2010·13 cites·27 claims
- 4975US7626858B2Integrated circuit having a precharging circuitQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Dec 1, 2009·9 cites·22 claims
- 5074US9917222B2Frameless solar module with mounting holesSAINT GOBAIN·Filed 2012·Granted Mar 13, 2018·3 cites·15 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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