Inventor · disambiguated record
Sang-Gyun Woo
Also filed as: WOO SANG-GYUN
61 granted patents·20 pending applications·483 citations·filing 1997–2012
98Inventor score
Top patents by PatentIndex Score
81 records- 0196US7842601B2Method of forming small pitch pattern using double spacersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 30, 2010·44 cites·19 claims
- 0294US7540970B2Methods of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·27 cites·23 claims
- 0394US7361609B2Mask patterns for semiconductor device fabrication and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·27 cites·18 claims
- 0493US7855038B2Mask patterns for semiconductor device fabrication and related methods and structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 21, 2010·21 cites·7 claims
- 0593US7473647B2Method of forming pattern using fine pitch hard maskSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 6, 2009·18 cites·20 claims
- 0692US6485895B1Methods for forming line patterns in semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 26, 2002·55 cites·25 claims
- 0789US7384730B2Top coating composition for photoresist and method of forming photoresist pattern using sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 10, 2008·13 cites·53 claims
- 0887US6800418B2Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 5, 2004·27 cites·57 claims
- 0986US6844134B2Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist composition comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 18, 2005·26 cites·50 claims
- 1085US7604907B2Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask setsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 20, 2009·8 cites·21 claims
- 1183US8242018B2Semiconductor device having fine contacts and method of fabricating the sameLEE JI-YOUNG·Filed 2010·Granted Aug 14, 2012·6 cites·21 claims
- 1282US7900170B2System and method correcting optical proximity effect using pattern configuration dependent OPC modelsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 1, 2011·7 cites·23 claims
- 1382US7604911B2Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 20, 2009·5 cites·24 claims
- 1482US7560768B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·8 cites·8 claims
- 1582US7314691B2Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 1, 2008·18 cites·40 claims
- 1682US6537727B2Resist composition comprising photosensitive polymer having loctone in its backboneSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 25, 2003·16 cites·18 claims
- 1778US7862988B2Method for forming patterns of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 4, 2011·6 cites·21 claims
- 1878US6803176B2Methods for forming line patterns in semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 12, 2004·17 cites·48 claims
- 1978US6696217B2Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting groupSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 24, 2004·8 cites·55 claims
- 2076US6497987B1Photosensitive lithocholate derivative and chemically amplified photoresist composition containing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 24, 2002·10 cites·19 claims
- 2174US7855408B2Semiconductor device having fine contactsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 21, 2010·5 cites·12 claims
- 2274US7807318B2Reflective photomask and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·3 cites·20 claims
- 2373US6962768B2Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 8, 2005·5 cites·67 claims
- 2471US8062981B2Method of forming pattern using fine pitch hard maskLEE JI-YOUNG·Filed 2008·Granted Nov 22, 2011·2 cites·20 claims
- 2569US8435705B2Methods of correcting optical parameters in photomasksHAN HAEK-SEUNG·Filed 2011·Granted May 7, 2013·3 cites·13 claims
- 2669US7678650B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 16, 2010·3 cites·14 claims
- 2768US6964839B1Photosensitive polymer having cyclic backbone and resist composition containing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 15, 2005·22 cites·16 claims
- 2866US8013375B2Semiconductor memory devices including diagonal bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·4 cites·19 claims
- 2965US7582899B2Semiconductor device having overlay measurement mark and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·33 claims
- 3065US7259065B2Method of forming trench in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 21, 2007·2 cites·17 claims
- 3163US8013374B2Semiconductor memory devices including offset bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·2 cites·16 claims
- 3262US7387869B2Method of forming pattern for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 17, 2008·1 cites·17 claims
- 3362US6642336B1Photosensitive polymerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 4, 2003·6 cites·21 claims
- 3461US8007963B2PhotomaskSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 30, 2011·1 cites·20 claims
- 3560US7297466B2Method of forming a photoresist pattern and method for patterning a layer using a photoresistSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 20, 2007·7 cites·2 claims
- 3660US6787287B2Photosensitive polymers and resist compositions comprising the photosensitive polymersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 7, 2004·5 cites·21 claims
- 3757US7985529B2Mask patterns including gel layers for semiconductor device fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 26, 2011·0 cites·15 claims
- 3856US8865375B2Halftone phase shift blank photomasks and halftone phase shift photomasksSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 21, 2014·0 cites·19 claims
- 3956US7842451B2Method of forming patternSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·0 cites·19 claims
- 4056US6596459B1Photosensitive polymer and resist composition containing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 22, 2003·4 cites·16 claims
- 4155US7547936B2Semiconductor memory devices including offset active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 16, 2009·1 cites·19 claims
- 4252US7335455B2Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 26, 2008·3 cites·27 claims
- 4351US7799490B2Optical masks and methods for measuring aberration of a beamSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 21, 2010·0 cites·11 claims
- 4451US7670725B2Optical masks and methods for measuring aberration of a beamSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 2, 2010·0 cites·18 claims
- 4551US6503687B2Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist compositionSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 7, 2003·3 cites·25 claims
- 4651US5851706APhase shift masks including chromium oxide and alumina phase shifter patterns, and methods of manufacturing and using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 22, 1998·14 cites·33 claims
- 4749US7314702B2Composition for a bottom-layer resistSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 1, 2008·2 cites·10 claims
- 4849US2006063077A1Mask patterns including gel layers for semiconductor device fabrication and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4948US7642042B2Polymer, top coating layer, top coating composition and immersion lithography process using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·0 cites·48 claims
- 5048US7575855B2Method of forming patternSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 18, 2009·0 cites·22 claims
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