Inventor · disambiguated record
Kyle Terrill
Also filed as: TERRILL KYLE · TERRILL KYLE W · TERRILL KYLE WENDELL
82 granted patents·4 pending applications·879 citations·filing 1992–2021
99Inventor score
Files withVISHAY SILICONIX34SILICONIX INC16INTEGRATED DEVICE TECH9SILICONIX INCORPORATED5TERRILL KYLE4
Top patents by PatentIndex Score
86 records- 0197US7795675B2Termination for trench MIS deviceSILICONIX INC·Filed 2005·Granted Sep 14, 2010·99 cites·10 claims
- 0297US7183610B2Super trench MOSFET including buried source electrode and method of fabricating the sameSILICONIX INC·Filed 2004·Granted Feb 27, 2007·118 cites·22 claims
- 0396US9589929B2Method for fabricating stack die packageVISHAY SILICONIX·Filed 2013·Granted Mar 7, 2017·28 cites·20 claims
- 0495US7544545B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2005·Granted Jun 9, 2009·27 cites·20 claims
- 0594US9425304B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2014·Granted Aug 23, 2016·14 cites·20 claims
- 0694US7557409B2Super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2007·Granted Jul 7, 2009·26 cites·2 claims
- 0791US9064896B2Transistor structure with feed-through source-to-substrate contactVISHAY SILICONIX·Filed 2013·Granted Jun 23, 2015·9 cites·17 claims
- 0890US9716166B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 0990US9431550B2Trench polysilicon diodeCHEN QUFEI·Filed 2011·Granted Aug 30, 2016·9 cites·13 claims
- 1089US8604525B2Transistor structure with feed-through source-to-substrate contactTERRILL KYLE·Filed 2010·Granted Dec 10, 2013·9 cites·14 claims
- 1186US9966330B2Stack die packageVISHAY SILICONIX·Filed 2013·Granted May 8, 2018·8 cites·20 claims
- 1286US9425305B2Structures of and methods of fabricating split gate MIS devicesTERRILL KYLE·Filed 2010·Granted Aug 23, 2016·9 cites·12 claims
- 1386US6921697B2Method for making trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2002·Granted Jul 26, 2005·31 cites·7 claims
- 1485US10546840B2Method for fabricating stack die packageVISHAY SILICONIX·Filed 2017·Granted Jan 28, 2020·4 cites·20 claims
- 1585US9425306B2Super junction trench power MOSFET devicesGAO YANG·Filed 2009·Granted Aug 23, 2016·12 cites·11 claims
- 1683US9443974B2Super junction trench power MOSFET device fabricationGAO YANG·Filed 2009·Granted Sep 13, 2016·11 cites·9 claims
- 1783US8368126B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2008·Granted Feb 5, 2013·11 cites·17 claims
- 1883US5831899ALocal interconnect structure and process for six-transistor SRAM cellINTEGRATED DEVICE TECH·Filed 1997·Granted Nov 3, 1998·42 cites·11 claims
- 1982US7045857B2Termination for trench MIS device having implanted drain-drift regionSILICONIX INC·Filed 2004·Granted May 16, 2006·24 cites·7 claims
- 2082US6882000B2Trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2001·Granted Apr 19, 2005·24 cites·19 claims
- 2182US6552889B1Current limiting technique for hybrid power MOSFET circuitsVISHAY SILICONIX·Filed 2001·Granted Apr 22, 2003·30 cites·28 claims
- 2281US7583485B1Electrostatic discharge protection circuit for integrated circuitsVISHAY SILICONIX·Filed 2005·Granted Sep 1, 2009·11 cites·21 claims
- 2380US8582258B1Electrostatic discharge protection circuit for integrated circuitsLUO MIN YIH·Filed 2009·Granted Nov 12, 2013·12 cites·21 claims
- 2480US8409954B2Ultra-low drain-source resistance power MOSFETCHAU THE-TU·Filed 2006·Granted Apr 2, 2013·8 cites·7 claims
- 2580US7268032B2Termination for trench MIS device having implanted drain-drift regionSILICONIX INC·Filed 2005·Granted Sep 11, 2007·7 cites·11 claims
- 2680US6903412B2Trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Jun 7, 2005·21 cites·8 claims
- 2779US9431530B2Super-high density trench MOSFETXU ROBERT Q·Filed 2010·Granted Aug 30, 2016·5 cites·15 claims
- 2878US9614043B2MOSFET termination trenchAZAM MISBAH UL·Filed 2012·Granted Apr 4, 2017·6 cites·20 claims
- 2977US10381473B2High-electron-mobility transistor with buried interconnectVISHAY SILICONIX·Filed 2017·Granted Aug 13, 2019·2 cites·15 claims
- 3077US10224426B2High-electron-mobility transistor devicesVISHAY SILICONIX·Filed 2017·Granted Mar 5, 2019·2 cites·8 claims
- 3177US7012005B2Self-aligned differential oxidation in trenches by ion implantationSILICONIX INC·Filed 2002·Granted Mar 14, 2006·21 cites·6 claims
- 3277US6875657B2Method of fabricating trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Apr 5, 2005·17 cites·14 claims
- 3377US6709930B2Thicker oxide formation at the trench bottom by selective oxide depositionSILICONIX INC·Filed 2002·Granted Mar 23, 2004·24 cites·13 claims
- 3476US9673314B2Semiconductor device with non-uniform trench oxide layerVISHAY SILICONIX·Filed 2015·Granted Jun 6, 2017·2 cites·13 claims
- 3576US9419129B2Split gate semiconductor device with curved gate oxide profileGAO YANG·Filed 2009·Granted Aug 16, 2016·5 cites·13 claims
- 3675US7704836B2Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2008·Granted Apr 27, 2010·4 cites·7 claims
- 3774US9577089B2Structures and methods of fabricating dual gate devicesTERRILL KYLE·Filed 2011·Granted Feb 21, 2017·3 cites·17 claims
- 3873US8697571B2Power MOSFET contact metallizationVISHAY SILICONIX·Filed 2012·Granted Apr 15, 2014·3 cites·6 claims
- 3973US7291884B2Trench MIS device having implanted drain-drift region and thick bottom oxideSILICONIX INC·Filed 2003·Granted Nov 6, 2007·16 cites·4 claims
- 4073US5574305AWalled-emitter transistorINTEGRATED DEVICE TECH·Filed 1994·Granted Nov 12, 1996·35 cites·1 claims
- 4171US10651303B2High-electron-mobility transistor devicesVISHAY SILICONIX·Filed 2019·Granted May 12, 2020·1 cites·12 claims
- 4271US9484451B2MOSFET active area and edge termination area charge balanceCHEN QUFEI·Filed 2008·Granted Nov 1, 2016·4 cites·15 claims
- 4370US10084037B2MOSFET active area and edge termination area charge balanceVISHAY SILICONIX·Filed 2016·Granted Sep 25, 2018·1 cites·20 claims
- 4469US9893168B2Split gate semiconductor device with curved gate oxide profileVISHAY SILICONIX·Filed 2016·Granted Feb 13, 2018·1 cites·9 claims
- 4569US9793706B2Current limiting systems and methodsVISHAY SILICONIX·Filed 2013·Granted Oct 17, 2017·2 cites·16 claims
- 4669US5289027AUltrathin submicron MOSFET with intrinsic channelHUGHES AIRCRAFT CO·Filed 1992·Granted Feb 22, 1994·28 cites·1 claims
- 4768US6849898B2Trench MIS device with active trench corners and thick bottom oxideSILICONIX INC·Filed 2001·Granted Feb 1, 2005·11 cites·25 claims
- 4867US9230810B2System and method for substrate wafer back side and edge cross section sealsLU HAMILTON·Filed 2010·Granted Jan 5, 2016·2 cites·2 claims
- 4967US7612431B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2008·Granted Nov 3, 2009·2 cites·10 claims
- 5066US10903163B2Trench MOSFET with self-aligned body contact with spacerVISHAY SILICONIX·Filed 2016·Granted Jan 26, 2021·1 cites·21 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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