Inventor · disambiguated record
Il-Man Bae
Also filed as: BAE IL-MAN
13 granted patents·1 pending application·138 citations·filing 1997–2007
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD14
Top patents by PatentIndex Score
14 records- 0192US7288967B2Differential output driver and semiconductor device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 30, 2007·30 cites·36 claims
- 0282US6242960B1Internal clock signal generating circuit employing pulse generatorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 5, 2001·27 cites·18 claims
- 0380US7560976B2Method of operating a semiconductor device and the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·11 cites·24 claims
- 0464US7203097B2Method of operating a semiconductor device and the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 10, 2007·11 cites·19 claims
- 0564US7055087B2Memory device for use in high-speed block pipelined Reed-Solomon decoder, method of accessing the memory device, and Reed-Solomon decoder having the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 30, 2006·12 cites·11 claims
- 0661US7586808B2Memory device for use in high-speed block pipelined reed-solomon decoder, method of accessing the memory device, and reed-solomon decoder having the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·4 cites·6 claims
- 0758US7984261B2Memory expansion structure in multi-path accessible semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 19, 2011·4 cites·11 claims
- 0853US6094080AInternal clock signal generator for synchronous memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 25, 2000·13 cites·18 claims
- 0952US6222787B1Integrated circuit memory devices having improved sense and restore operation reliabilitySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 24, 2001·13 cites·24 claims
- 1050US6791892B2Method of generating an initializing signal during power-up of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 14, 2004·6 cites·18 claims
- 1148US6901018B2Method of generating initializing signal in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 31, 2005·5 cites·8 claims
- 1238US6342808B1High voltage generating circuitSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 29, 2002·2 cites·6 claims
- 1336US2008215952A1Hybrid flash memory device, memory system, and method controlling errorsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1431US6236604B1Row address circuit of semiconductor memory device and row addressing method in refresh modeSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 22, 2001·0 cites·10 claims
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