Inventor · disambiguated record
John J. Hackenberg
Also filed as: HACKENBERG JOHN J
10 granted patents·3 pending applications·123 citations·filing 1994–2008
89Inventor score
Files withFREESCALE SEMICONDUCTOR INC5HARRIS CORP3INTERSIL INC2FAIRCHILD SEMICONDUCTOR1INTERSIL CORP1
Top patents by PatentIndex Score
13 records- 0188US6246090B1Power trench transistor device source region formation using silicon spacerINTERSIL CORP·Filed 2000·Granted Jun 12, 2001·43 cites·13 claims
- 0274US6455379B2Power trench transistor device source region formation using silicon spacerFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Sep 24, 2002·18 cites·12 claims
- 0371US8258035B2Method to improve source/drain parasitics in vertical devicesMATHEW LEO·Filed 2007·Granted Sep 4, 2012·4 cites·18 claims
- 0471US7528029B2Stressor integration and method thereofFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted May 5, 2009·6 cites·20 claims
- 0565US7972922B2Method of forming a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jul 5, 2011·2 cites·19 claims
- 0664US5830279ADevice and method for improving corrosion resistance and etch tool integrity in dry metal etchingHARRIS CORP·Filed 1995·Granted Nov 3, 1998·31 cites·12 claims
- 0758US7097714B2Particulate removal from an electrostatic chuckINTERSIL INC·Filed 2003·Granted Aug 29, 2006·5 cites·13 claims
- 0848US2006291133A1Particulate Removal from an Electrostatic ChuckINTERSIL INC·Filed 2006·Application pending·0 cites
- 0941US7687370B2Method of forming a semiconductor isolation trenchFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 30, 2010·0 cites·10 claims
- 1041US2007249129A1STI stressor integration for minimal phosphoric exposure and divot-free topographyFREESCALE SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1140US5648678AProgrammable element in barrier metal deviceHARRIS CORP·Filed 1994·Granted Jul 15, 1997·11 cites·19 claims
- 1239US2006261436A1Electronic device including a trench field isolation region and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 1332US5837603APlanarization method by use of particle dispersion and subsequent thermal flowHARRIS CORP·Filed 1996·Granted Nov 17, 1998·3 cites·23 claims
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