Inventor · disambiguated record
Masumi Saitoh
Also filed as: SAITOH MASUMI
85 granted patents·12 pending applications·315 citations·filing 2007–2024
99Inventor score
Top patents by PatentIndex Score
97 records- 0196US11737281B2Semiconductor memory deviceKIOXIA CORP·Filed 2021·Granted Aug 22, 2023·4 cites·20 claims
- 0296US8076231B2Semiconductor device and manufacturing method of sameSAITOH MASUMI·Filed 2009·Granted Dec 13, 2011·43 cites·12 claims
- 0395US11282559B1Memory deviceKIOXIA CORP·Filed 2021·Granted Mar 22, 2022·7 cites·19 claims
- 0495US9786683B1Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 10, 2017·15 cites·15 claims
- 0595US9502431B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2015·Granted Nov 22, 2016·15 cites·21 claims
- 0694US9818757B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Nov 14, 2017·12 cites·18 claims
- 0793US9761798B2Storage deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Sep 12, 2017·10 cites·20 claims
- 0892US10347650B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Jul 9, 2019·8 cites·20 claims
- 0992US10312289B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Jun 4, 2019·9 cites·9 claims
- 1092US8492219B2Semiconductor device manufacturing methodSAITOH MASUMI·Filed 2012·Granted Jul 23, 2013·15 cites·17 claims
- 1190US10784312B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Sep 22, 2020·11 cites·16 claims
- 1290US10685709B2Nonvolatile semiconductor memory with gate insulation layer of a transistor including ferroelectric materialTOSHIBA MEMORY CORP·Filed 2018·Granted Jun 16, 2020·10 cites·6 claims
- 1390US8710485B2Semiconductor device and method of manufacturing the sameSAITOH MASUMI·Filed 2012·Granted Apr 29, 2014·14 cites·34 claims
- 1489US9929166B1Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Mar 27, 2018·6 cites·19 claims
- 1588US11195858B2Ferroelectric memory deviceKIOXIA CORP·Filed 2020·Granted Dec 7, 2021·2 cites·9 claims
- 1688US10930847B2Memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Feb 23, 2021·9 cites·14 claims
- 1788US8932915B2Semiconductor device and method for manufacturing the sameSAITOH MASUMI·Filed 2011·Granted Jan 13, 2015·7 cites·6 claims
- 1888US8399926B2Semiconductor device and manufacturing method of sameSAITOH MASUMI·Filed 2011·Granted Mar 19, 2013·9 cites·20 claims
- 1987US9614103B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2016·Granted Apr 4, 2017·5 cites·17 claims
- 2086US9548085B2Semiconductor memory deviceTOSHIBA KK·Filed 2015·Granted Jan 17, 2017·8 cites·20 claims
- 2185US9997569B2Memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Jun 12, 2018·5 cites·10 claims
- 2285US9755055B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2014·Granted Sep 5, 2017·4 cites·11 claims
- 2385US9318532B2Semiconductor memory deviceTOSHIBA KK·Filed 2014·Granted Apr 19, 2016·5 cites·13 claims
- 2483US10438801B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Oct 8, 2019·3 cites·13 claims
- 2583US9530891B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Dec 27, 2016·6 cites·1 claims
- 2683US7605422B2Semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 20, 2009·10 cites·20 claims
- 2782US9825096B2Resistance change memory, method of manufacturing resistance change memory, and FETTOSHIBA MEMORY CORP·Filed 2015·Granted Nov 21, 2017·4 cites·8 claims
- 2880US10043864B2Thin film semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Aug 7, 2018·3 cites·18 claims
- 2980US9275729B2Semiconductor memory deviceTOSHIBA KK·Filed 2014·Granted Mar 1, 2016·5 cites·24 claims
- 3079US10050087B1Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Aug 14, 2018·3 cites·13 claims
- 3179US9082973B2Resistance random access memory deviceTOSHIBA KK·Filed 2013·Granted Jul 14, 2015·3 cites·18 claims
- 3278US9735201B2Memory deviceTOSHIBA KK·Filed 2016·Granted Aug 15, 2017·3 cites·9 claims
- 3378US9203023B2Semiconductor memory device and a method of manufacturing the sameTOSHIBA KK·Filed 2014·Granted Dec 1, 2015·4 cites·14 claims
- 3477US10128316B2Semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Nov 13, 2018·4 cites·20 claims
- 3577US9805927B2Nonvolatile semiconductor memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Oct 31, 2017·2 cites·7 claims
- 3676US10832742B2Semiconductor storage deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Nov 10, 2020·3 cites·20 claims
- 3776US9087715B2Nonvolatile semiconductor memory device and method of manufacturing the sameKUSAI HARUKA·Filed 2012·Granted Jul 21, 2015·4 cites·10 claims
- 3875US8518769B2Semiconductor device and method of manufacturing the sameOTA KENSUKE·Filed 2012·Granted Aug 27, 2013·4 cites·4 claims
- 3974US10038032B2Semiconductor memory device, semiconductor device, and method for manufacturing the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Jul 31, 2018·2 cites·22 claims
- 4073US10608009B2Peripheral structure for NAND flash memory deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Mar 31, 2020·2 cites·7 claims
- 4173US9196629B2Non-volatile semiconductor memory device having carbon doped columnar semiconductor layerTOSHIBA KK·Filed 2014·Granted Nov 24, 2015·3 cites·13 claims
- 4272US11929352B2Semiconductor memory device having transistors between bonding pads and word linesKIOXIA CORP·Filed 2022·Granted Mar 12, 2024·0 cites·18 claims
- 4372US10923486B2Memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Feb 16, 2021·1 cites·10 claims
- 4472US10446749B1Memory deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Oct 15, 2019·3 cites·12 claims
- 4571US10256404B2Memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 9, 2019·1 cites·6 claims
- 4669US11672129B2Memory deviceKIOXIA CORP·Filed 2021·Granted Jun 6, 2023·0 cites·18 claims
- 4769US10147874B2Memory deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Dec 4, 2018·1 cites·17 claims
- 4869US8053758B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Nov 8, 2011·1 cites·20 claims
- 4968US9412937B2Memory deviceTOSHIBA KK·Filed 2015·Granted Aug 9, 2016·1 cites·12 claims
- 5068US9202845B2Memory device having a stacked variable resistance layerTOSHIBA KK·Filed 2014·Granted Dec 1, 2015·1 cites·10 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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