Inventor · disambiguated record
Kakutaro Suda
Also filed as: SUDA KAKUTARO
14 granted patents·173 citations·filing 1986–2001
93Inventor score
Files withMITSUBISHI ELECTRIC CORP14
Top patents by PatentIndex Score
14 records- 0171US5731617ASemiconductor device having bipolar transistor and field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 24, 1998·28 cites·16 claims
- 0270US6602725B2Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 5, 2003·11 cites·7 claims
- 0361US4729969AMethod for forming silicide electrode in semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Mar 8, 1988·19 cites·2 claims
- 0461US4705599AMethod for fabricating bipolar transistor in integrated circuitMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Nov 10, 1987·20 cites·2 claims
- 0556US6441441B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 27, 2002·17 cites·14 claims
- 0652US5095355ABipolar cross-coupled memory cells having improved immunity to soft errorsMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 10, 1992·16 cites·12 claims
- 0749US6215160B1Semiconductor device having bipolar transistor and field effect transistor and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 10, 2001·10 cites·3 claims
- 0849US5310691AMethod of manufacturing semiconductor device including formation of alignment markMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 10, 1994·11 cites·15 claims
- 0944US6303944B1Method of manufacturing a semiconductor device having a monitor pattern, and a semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 16, 2001·9 cites·5 claims
- 1043US6027962AMethod of manufacturing semiconductor device having bipolar transistor and field-effect transistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 22, 2000·10 cites·9 claims
- 1142US4840920AMethod of isolating a semiconductor device using local oxidationMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Jun 20, 1989·10 cites·6 claims
- 1234US6259147B1Semiconductor device having a fuse layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jul 10, 2001·7 cites·6 claims
- 1331US5256898ASemiconductor device with a different epitaxial thickness between adjacent circuit regionsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 26, 1993·2 cites·10 claims
- 1431US4897363AMethod of manufacturing semiconductor device isolationMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 30, 1990·3 cites·1 claims
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