Inventor · disambiguated record
Mark Deherrera
Also filed as: DEHERRERA MARK · DEHERRERA MARK F · RIZZO NICHOLAS D
25 granted patents·1 pending application·1,743 citations·filing 1999–2025
97Inventor score
Top patents by PatentIndex Score
26 records- 0199US6331943B1MTJ MRAM series-parallel architectureMOTOROLA INC·Filed 2000·Granted Dec 18, 2001·300 cites·23 claims
- 0298US6835423B2Method of fabricating a magnetic element with insulating veilsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 28, 2004·141 cites·10 claims
- 0398US6545906B1Method of writing to scalable magnetoresistance random access memory elementMOTOROLA INC·Filed 2001·Granted Apr 8, 2003·522 cites·31 claims
- 0495US6430084B1Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layerMOTOROLA INC·Filed 2001·Granted Aug 6, 2002·101 cites·36 claims
- 0594US6365419B1High density MRAM cell arrayMOTOROLA INC·Filed 2000·Granted Apr 2, 2002·101 cites·27 claims
- 0693US6544801B1Method of fabricating thermally stable MTJ cell and apparatusMOTOROLA INC·Filed 2000·Granted Apr 8, 2003·99 cites·50 claims
- 0792US6233172B1Magnetic element with dual magnetic states and fabrication method thereofMOTOROLA INC·Filed 1999·Granted May 15, 2001·205 cites·19 claims
- 0889US6518071B1Magnetoresistive random access memory device and method of fabrication thereofMOTOROLA INC·Filed 2002·Granted Feb 11, 2003·49 cites·44 claims
- 0988US6909631B2MRAM and methods for reading the MRAMFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 21, 2005·47 cites·31 claims
- 1088US6784510B1Magnetoresistive random access memory device structuresFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·44 cites·18 claims
- 1181US6760266B2Sense amplifier and method for performing a read operation in a MRAMFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jul 6, 2004·28 cites·19 claims
- 1280US9543041B2Configuration and testing for magnetoresistive memory to ensure long term continuous operationEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Jan 10, 2017·4 cites·18 claims
- 1378US6885074B2Cladded conductor for use in a magnetoelectronics device and method for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Apr 26, 2005·21 cites·15 claims
- 1477US7158407B2Triple pulse method for MRAM toggle bit characterizationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 2, 2007·10 cites·20 claims
- 1577US7105363B2Cladded conductor for use in a magnetoelectronics device and method for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 12, 2006·6 cites·19 claims
- 1673US6956763B2MRAM element and methods for writing the MRAM elementFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 18, 2005·20 cites·33 claims
- 1768US6888743B2MRAM architectureFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 3, 2005·15 cites·23 claims
- 1867US6890770B2Magnetoresistive random access memory device structures and methods for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted May 10, 2005·10 cites·18 claims
- 1959US2025292815A1Anti-fuse and fuse in magnetoresistive deviceEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 2058US7184300B2Magneto resistance random access memory elementFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Feb 27, 2007·8 cites·43 claims
- 2155US6912107B2Magnetic element with insulating veils and fabricating method thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 28, 2005·4 cites·7 claims
- 2252US10923170B2Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routinesEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Feb 16, 2021·0 cites·17 claims
- 2347US10262713B2Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routinesEVERSPIN TECHNOLOGIES INC·Filed 2017·Granted Apr 16, 2019·0 cites·10 claims
- 2447US7088608B2Reducing power consumption during MRAM writes using multiple current levelsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 8, 2006·5 cites·26 claims
- 2544US7447060B2MRAM Memory conditioningEVERSPIN TECHNOLOGIES INC·Filed 2007·Granted Nov 4, 2008·0 cites·20 claims
- 2643US7333360B2Apparatus for pulse testing a MRAM device and method thereforeFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Feb 19, 2008·3 cites·23 claims
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