Inventor · disambiguated record
Akiyoshi Asai
Also filed as: ASAI AKIYOSHI
10 granted patents·1 pending application·551 citations·filing 1992–2015
92Inventor score
Top patents by PatentIndex Score
11 records- 0194US5488243ASOI MOSFET with floating gateNIPPON DENSO CO·Filed 1993·Granted Jan 30, 1996·133 cites·10 claims
- 0287US6150697ASemiconductor apparatus having high withstand voltageDENSO CORP·Filed 1999·Granted Nov 21, 2000·106 cites·21 claims
- 0386US5869872ASemiconductor integrated circuit device and manufacturing method for the sameNIPPON DENSO CO·Filed 1997·Granted Feb 9, 1999·75 cites·12 claims
- 0482US5751041ASemiconductor integrated circuit deviceDENSO CORPORATAION·Filed 1996·Granted May 12, 1998·70 cites·24 claims
- 0582US5610426ASemiconductor integrated circuit device having excellent dual polarity overvoltage protection characteristicsNIPPON DENSO CO·Filed 1995·Granted Mar 11, 1997·58 cites·11 claims
- 0677US5786616ASemiconductor integrated circuit having an SOI structure, provided with a protective circuitNIPPON DENSO CO·Filed 1997·Granted Jul 28, 1998·44 cites·38 claims
- 0772US5663588ASemiconductor device having an SOI structure of mesa isolation type and manufacturing method thereforNIPPON DENSO CO·Filed 1995·Granted Sep 2, 1997·46 cites·16 claims
- 0840US2011180938A1Electronic device and method of manufacturing the sameDENSO CORP·Filed 2011·Application pending·0 cites
- 0938US5736770ASemiconductor device with conductive connecting layer and abutting insulator section made of oxide of same materialNIPPON DENSO CO·Filed 1994·Granted Apr 7, 1998·9 cites·29 claims
- 1038US5279981AMethod of reducing the trap density of an oxide film for application to fabricating a nonvolatile memory cellNIPPON DENSO CO·Filed 1992·Granted Jan 18, 1994·10 cites·17 claims
- 1134US10002841B2Semiconductor deviceDENSO CORP·Filed 2015·Granted Jun 19, 2018·0 cites·5 claims
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