Inventor · disambiguated record
William G. En
Also filed as: EN WILLIAM G · EN WILLIAM GEORGE
68 granted patents·8 pending applications·2,940 citations·filing 1997–2023
99Inventor score
Top patents by PatentIndex Score
76 records- 0199US6573172B1Methods for improving carrier mobility of PMOS and NMOS devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 3, 2003·395 cites·30 claims
- 0297US7056808B2Cleaving process to fabricate multilayered substrates using low implantation dosesSILICON GENESIS CORP·Filed 2002·Granted Jun 6, 2006·121 cites·16 claims
- 0397US6410371B1Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 25, 2002·163 cites·13 claims
- 0496US7402207B1Method and apparatus for controlling the thickness of a selective epitaxial growth layerADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 22, 2008·104 cites·12 claims
- 0596US6534381B2Method for fabricating multi-layered substratesSILICON GENESIS CORP·Filed 2000·Granted Mar 18, 2003·139 cites·25 claims
- 0696US6448114B1Method of fabricating a silicon-on-insulator (SOI) chip having an active layer of non-uniform thicknessADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 10, 2002·93 cites·9 claims
- 0795US6548361B1SOI MOSFET and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 15, 2003·84 cites·14 claims
- 0895US6414355B1Silicon-on-insulator (SOI) chip having an active layer of non-uniform thicknessADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 2, 2002·79 cites·12 claims
- 0994US7456062B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 25, 2008·25 cites·21 claims
- 1094US6611023B1Field effect transistor with self alligned double gate and method of forming sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 26, 2003·83 cites·9 claims
- 1194US6509613B1Self-aligned floating body control for SOI device through leakage enhanced buried oxideADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·88 cites·15 claims
- 1294US6500732B1Cleaving process to fabricate multilayered substrates using low implantation dosesSILICON GENESIS CORP·Filed 2000·Granted Dec 31, 2002·150 cites·12 claims
- 1393US6764898B1Implantation into high-K dielectric material after gate etch to facilitate removalADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·76 cites·23 claims
- 1493US6563183B1Gate array with multiple dielectric properties and method for forming sameADVANCED MICRO DEVICES INC·Filed 2002·Granted May 13, 2003·113 cites·4 claims
- 1593US5963412AProcess induced charging damage control deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 5, 1999·109 cites·8 claims
- 1692US6451656B1CMOS inverter configured from double gate MOSFET and method of fabricating sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 17, 2002·68 cites·20 claims
- 1790US6512244B1SOI device with structure for enhancing carrier recombination and method of fabricating sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 28, 2003·60 cites·12 claims
- 1889US6713357B1Method to reduce parasitic capacitance of MOS transistorsADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 30, 2004·65 cites·16 claims
- 1988US7378330B2Cleaving process to fabricate multilayered substrates using low implantation dosesSILICON GENESIS CORP·Filed 2006·Granted May 27, 2008·9 cites·16 claims
- 2088US6867130B1Enhanced silicidation of polysilicon gate electrodesADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 15, 2005·45 cites·6 claims
- 2188US6765227B1Semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer and method of fabrication using wafer bondingADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·43 cites·13 claims
- 2287US6713819B1SOI MOSFET having amorphized source drain and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 30, 2004·45 cites·13 claims
- 2387US6458723B1High temperature implant apparatusSILICON GENESIS CORP·Filed 2000·Granted Oct 1, 2002·39 cites·12 claims
- 2484US7071044B1Method of making a test structure for gate-body current and direct extraction of physical gate length using conventional CMOSADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 4, 2006·30 cites·18 claims
- 2584US6812550B1Wafer pattern variation of integrated circuit fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·27 cites·20 claims
- 2684US6693004B1Interfacial barrier layer in semiconductor devices with high-K gate dielectric materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 17, 2004·33 cites·21 claims
- 2783US2024324247A1Die pair device partitioningADVANCED MICRO DEVICES INC·Filed 2023·Application pending·0 cites
- 2882US7402485B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 22, 2008·9 cites·16 claims
- 2982US7132683B1Dual purpose test structure for gate-body current measurement in PD/SOI and for direct extraction of physical gate length in scaled CMOS technologiesADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 7, 2006·26 cites·7 claims
- 3082US2024321706A1Back end of line optimized to function in a 3d stack configurationADVANCED MICRO DEVICES INC·Filed 2023·Application pending·0 cites
- 3181US6764966B1Spacers with a graded dielectric constant for semiconductor devices having a high-K dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·28 cites·5 claims
- 3280US7241700B1Methods for post offset spacer clean for improved selective epitaxy silicon growthADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 10, 2007·22 cites·24 claims
- 3379US6723666B1Method for reducing gate oxide surface irregularitiesADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 20, 2004·20 cites·10 claims
- 3479US6518631B1Multi-Thickness silicide device formed by succesive spacersADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·25 cites·15 claims
- 3578US6764917B1SOI device with different silicon thicknessesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 20, 2004·23 cites·15 claims
- 3678US6441433B1Method of making a multi-thickness silicide SOI deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·24 cites·15 claims
- 3778US6433391B1Bonded SOI for floating body and metal gettering controlADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 13, 2002·20 cites·5 claims
- 3877US6060766AProtection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layersADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·50 cites·1 claims
- 3976US6060328AMethods and arrangements for determining an endpoint for an in-situ local interconnect etching processADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·40 cites·20 claims
- 4075US6964875B1Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitanceADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 15, 2005·15 cites·10 claims
- 4173US5990524ASilicon oxime spacer for preventing over-etching during local interconnect formationADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 23, 1999·40 cites·20 claims
- 4271US7122863B1SOI device with structure for enhancing carrier recombination and method of fabricating sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 17, 2006·17 cites·13 claims
- 4371US7033916B1Shallow junction semiconductor and method for the fabrication thereofADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·13 cites·14 claims
- 4471US6358362B1Methods and arrangements for determining an endpoint for an in-situ local interconnect etching processADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 19, 2002·12 cites·8 claims
- 4570US6566213B2Method of fabricating multi-thickness silicide device formed by disposable spacersADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·15 cites·16 claims
- 4666US6114235AMultipurpose cap layer dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 5, 2000·32 cites·6 claims
- 4765US6905971B1Treatment of dielectric material to enhance etch rateADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 14, 2005·9 cites·20 claims
- 4865US6066567AMethods for in-situ removal of an anti-reflective coating during an oxide resistor protect etching processADVANCED MICRO DEVICES INC·Filed 1997·Granted May 23, 2000·29 cites·20 claims
- 4964US6780776B1Nitride offset spacer to minimize silicon recess by using poly reoxidation layer as etch stop layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 24, 2004·9 cites·15 claims
- 5063US6535015B1Device and method for testing performance of silicon structuresADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·11 cites·16 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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