Inventor · disambiguated record
Hirotoshi Yamagishi
Also filed as: YAMAGISHI HIROTOSHI
38 granted patents·696 citations·filing 1988–1999
98Inventor score
Top patents by PatentIndex Score
38 records- 0189US5667584AMethod for the preparation of a single crystal of silicon with decreased crystal defectsSHINETSU HANDOTAI KK·Filed 1995·Granted Sep 16, 1997·64 cites·1 claims
- 0287US5728211ASilicon single crystal with low defect density and method of producing sameSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 17, 1998·57 cites·8 claims
- 0387US5248378AMethod and apparatus for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1992·Granted Sep 28, 1993·62 cites·1 claims
- 0485US5373805ASingle crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1992·Granted Dec 20, 1994·43 cites·10 claims
- 0583US5126113AApparatus for producing czochralski-grown single crystalsSHINETSU HANDOTAI KK·Filed 1991·Granted Jun 30, 1992·58 cites·7 claims
- 0681US4956153AApparatus for Czochralski single crystal growingSHINETSU HANDOTAI KK·Filed 1988·Granted Sep 11, 1990·42 cites·6 claims
- 0774US5792255AManufacturing method of single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Aug 11, 1998·24 cites·3 claims
- 0872US5462010AApparatus for supplying granular raw material for a semiconductor single crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1992·Granted Oct 31, 1995·32 cites·10 claims
- 0971US5306387AMethod for pulling up semiconductor single crystalSHINETSU HANDOTAI KK·Filed 1991·Granted Apr 26, 1994·20 cites·10 claims
- 1069US5361721ASingle crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1993·Granted Nov 8, 1994·26 cites·8 claims
- 1165US5386796AMethod for testing quality of silicon waferSHINETSU HANDOTAI KK·Filed 1992·Granted Feb 7, 1995·16 cites·2 claims
- 1261US5258092AMethod of growing silicon monocrystalline rodSHINETSU HANDOTAI KK·Filed 1992·Granted Nov 2, 1993·14 cites·6 claims
- 1360US5980630AManufacturing method of single crystal and apparatus of manufacturing the sameSHINETSU HANDOTAI KK·Filed 1998·Granted Nov 9, 1999·12 cites·8 claims
- 1460US5720809ACrucible for pulling silicon single crystalSHINETSU HANDOTAI KK·Filed 1995·Granted Feb 24, 1998·15 cites·1 claims
- 1560US5359959AMethod for pulling up semi-conductor single crystalSHINETSU HANDOTAI KK·Filed 1992·Granted Nov 1, 1994·20 cites·11 claims
- 1658US5550354AHigh-frequency induction heating coilSHINETSU HANDOTAI KK·Filed 1995·Granted Aug 27, 1996·19 cites·7 claims
- 1758US5067989ASingle crystal siliconSHINETSU HANDOTAI KK·Filed 1990·Granted Nov 26, 1991·13 cites·4 claims
- 1857US6117234ASingle crystal growing apparatus and single crystal growing methodSUPER SILICON CRYSTAL RES INST·Filed 1998·Granted Sep 12, 2000·13 cites·16 claims
- 1956US5556461AMethod for producing a silicon single crystal by a float-zone methodSHINETSU HANDOTAI KK·Filed 1994·Granted Sep 17, 1996·13 cites·13 claims
- 2055US5340434AProcess for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1993·Granted Aug 23, 1994·10 cites·2 claims
- 2150US5785758ASingle crystal growing apparatusFiled 1996·Granted Jul 28, 1998·9 cites·3 claims
- 2248US5834322AHeat treatment of Si single crystalSHINETSU HANDOTAI KK·Filed 1997·Granted Nov 10, 1998·14 cites·3 claims
- 2346US5843229ACrystal holding apparatusSHINETSU HANDOTAI KK·Filed 1996·Granted Dec 1, 1998·10 cites·18 claims
- 2446US5501172AMethod of growing silicon single crystalsSHINETSU HANDOTAI KK·Filed 1995·Granted Mar 26, 1996·8 cites·7 claims
- 2545US5110404AMethod for heat processing of siliconSHINETSU HANDOTAI KK·Filed 1990·Granted May 5, 1992·15 cites·11 claims
- 2642US6113686ASingle crystal growing method and apparatusSHINETSU HANDOTAI KK·Filed 1996·Granted Sep 5, 2000·11 cites·20 claims
- 2740US5688321AApparatus for producing a silicon single crystal by a float-zone methodSHINETSU HANDOTAI KK·Filed 1996·Granted Nov 18, 1997·4 cites·9 claims
- 2840US5534112AMethod for testing electrical properties of silicon single crystalSHINETSU HANDOTAI KK·Filed 1994·Granted Jul 9, 1996·7 cites·2 claims
- 2939US5792258AHigh-frequency induction heater and method of producing semiconductor single crystal using the sameSHINETSU HANDOTAI KK·Filed 1996·Granted Aug 11, 1998·7 cites·17 claims
- 3039US5735951ASingle crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1996·Granted Apr 7, 1998·5 cites·7 claims
- 3138US6372040B1Single crystal growth apparatus and single crystal growth methodSUPER SILICON CRYSTAL RES INST·Filed 1999·Granted Apr 16, 2002·4 cites·4 claims
- 3238US5688319AMethod for testing electrical properties of silicon single crystalSHINETSU HANDOTAI KK·Filed 1991·Granted Nov 18, 1997·5 cites·2 claims
- 3337US5788718AApparatus and a method for growing a single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Aug 4, 1998·5 cites·8 claims
- 3436US6120749ASilicon single crystal with no crystal defect in peripheral part of wafer and process for producing the sameSHINETSU HANDOTAI KK·Filed 1997·Granted Sep 19, 2000·5 cites·2 claims
- 3536US5667588ASingle crystal pulling apparatusSHINETSU HANDOTAI KK·Filed 1996·Granted Sep 16, 1997·7 cites·3 claims
- 3633US5348893AMethod for treatment of semiconductor waferSHINETSU HANDOTAI KK·Filed 1993·Granted Sep 20, 1994·5 cites·6 claims
- 3730US5871583AApparatus for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Feb 16, 1999·0 cites·5 claims
- 3829US5262338AMethod for fabrication of semiconductor deviceSHINETSU HANDOTAI KK·Filed 1992·Granted Nov 16, 1993·2 cites·3 claims
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