Inventor · disambiguated record
Robert B. Ogle
Also filed as: OGLE JR ROBERT B · OGLE JR ROBERT BERTRAM · OGLE ROBERT · OGLE ROBERT B
51 granted patents·6 pending applications·2,155 citations·filing 1996–2021
99Inventor score
Top patents by PatentIndex Score
57 records- 0199US6674138B1Use of high-k dielectric materials in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 6, 2004·490 cites·16 claims
- 0298US6803272B1Use of high-K dielectric material in modified ONO structure for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·149 cites·20 claims
- 0398US5939763AUltrathin oxynitride structure and process for VLSI applicationsADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 17, 1999·263 cites·27 claims
- 0497US6645882B1Preparation of composite high-K/standard-K dielectrics for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·122 cites·20 claims
- 0597US6451641B1Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 17, 2002·148 cites·20 claims
- 0693US6245689B1Process for reliable ultrathin oxynitride formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 12, 2001·107 cites·27 claims
- 0792US6656749B1In-situ monitoring during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 2, 2003·57 cites·11 claims
- 0890US6555439B1Partial recrystallization of source/drain region before laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·53 cites·14 claims
- 0990US6265268B1High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·94 cites·21 claims
- 1089US6680250B1Formation of deep amorphous region to separate junction from end-of-range defectsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·43 cites·12 claims
- 1188US7602067B2Hetero-structure variable silicon rich nitride for multiple level memory flash memory deviceSPANSION LLC·Filed 2007·Granted Oct 13, 2009·15 cites·20 claims
- 1288US6812106B1Reduced dopant deactivation of source/drain extensions using laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·38 cites·15 claims
- 1387US7354826B1Method for forming memory array bitlines comprising epitaxially grown silicon and related structureSPANSION LLC·Filed 2005·Granted Apr 8, 2008·12 cites·9 claims
- 1487US6512264B1Flash memory having pre-interpoly dielectric treatment layer and method of formingADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 28, 2003·37 cites·11 claims
- 1585US7001814B1Laser thermal annealing methods for flash memory devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 21, 2006·31 cites·27 claims
- 1682US6849925B1Preparation of composite high-K/standard-K dielectrics for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 1, 2005·22 cites·20 claims
- 1782US6355933B1Ion source and method for using sameADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 12, 2002·36 cites·17 claims
- 1881US6825115B1Post silicide laser thermal annealing to avoid dopant deactivationADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 30, 2004·28 cites·13 claims
- 1981US6780789B1Laser thermal oxidation to form ultra-thin gate oxideADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 24, 2004·24 cites·7 claims
- 2081US6319775B1Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 20, 2001·65 cites·14 claims
- 2178US6743689B1Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensionsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 1, 2004·21 cites·15 claims
- 2277US6867080B1Polysilicon tilting to prevent geometry effects during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 15, 2005·19 cites·16 claims
- 2377US6180538B1Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-depositionADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 30, 2001·50 cites·18 claims
- 2474US6867097B1Method of making a memory cell with polished insulator layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 15, 2005·45 cites·10 claims
- 2571US6551888B1Tuning absorption levels during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 22, 2003·13 cites·20 claims
- 2670US7091097B1End-of-range defect minimization in semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 15, 2006·12 cites·22 claims
- 2769US11069789B2Varied silicon richness silicon nitride formationMONTEREY RES LLC·Filed 2020·Granted Jul 20, 2021·0 cites·1 claims
- 2868US5879975AHeat treating nitrogen implanted gate electrode layer for improved gate electrode etch profileADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 9, 1999·33 cites·14 claims
- 2967US6306777B1Flash memory having a treatment layer disposed between an interpoly dielectric structure and method of formingADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 23, 2001·13 cites·10 claims
- 3067US2022005933A1Varied silicon richness silicon nitride formationMONTEREY RES LLC·Filed 2021·Application pending·0 cites
- 3166US6798002B1Dual-purpose anti-reflective coating and spacer for flash memory and other dual gate technologies and method of formingADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 28, 2004·10 cites·8 claims
- 3265US6746944B1Low nisi/si interface contact resistance with preamorphizing and laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 8, 2004·9 cites·7 claims
- 3365US6689682B1Multilayer anti-reflective coating for semiconductor lithographyADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 10, 2004·9 cites·6 claims
- 3463US9012333B2Varied silicon richness silicon nitride formationMA YI·Filed 2009·Granted Apr 21, 2015·1 cites·20 claims
- 3562US7863128B1Non-volatile memory device with improved erase speedSPANSION LLC·Filed 2005·Granted Jan 4, 2011·2 cites·8 claims
- 3661US7351638B1Scanning laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2008·7 cites·7 claims
- 3761US6902966B2Low-temperature post-dopant activation processADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 7, 2005·7 cites·11 claims
- 3859US10644126B2Varied silicon richness silicon nitride formationMONTEREY RES LLC·Filed 2017·Granted May 5, 2020·0 cites·6 claims
- 3957US7211489B1Localized halo implant region formed using tilt pre-amorphization implant and laser thermal annealADVANCED MICRO DEVICES INC·Filed 2004·Granted May 1, 2007·5 cites·19 claims
- 4057US6620705B1Nitriding pretreatment of ONO nitride for oxide depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 16, 2003·7 cites·21 claims
- 4157US6278166B1Use of nitric oxide surface anneal to provide reaction barrier for deposition of tantalum pentoxideADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 21, 2001·21 cites·6 claims
- 4256US6586339B1Silicon barrier layer to prevent resist poisoningADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 1, 2003·19 cites·8 claims
- 4355US6709927B1Process for treating ONO dielectric film of a floating gate memory cellADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 23, 2004·4 cites·18 claims
- 4452US7026211B1Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 11, 2006·4 cites·17 claims
- 4547US8563441B2Methods for fabricating memory cells having fin structures with smooth sidewalls and rounded top corners and edgesMA YI·Filed 2008·Granted Oct 22, 2013·0 cites·17 claims
- 4646US2015194499A1Varied silicon richness silicon nitride formationSPANSION LLC·Filed 2015·Application pending·0 cites
- 4745US7863175B2Zero interface polysilicon to polysilicon gate for flash memorySPANSION LLC·Filed 2006·Granted Jan 4, 2011·0 cites·4 claims
- 4845US6992370B1Memory cell structure having nitride layer with reduced charge loss and method for fabricating sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 31, 2006·2 cites·12 claims
- 4945US2008150028A1Zero interface polysilicon to polysilicon gate for semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 5044US6716702B2Method of forming flash memory having pre-interpoly dielectric treatment layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 6, 2004·1 cites·9 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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