Inventor · disambiguated record
Johannes Baumgartl
Also filed as: BAUMGARTL JOHANNES · BAUMGARTL JOHANNES KONRAD
39 granted patents·5 pending applications·41 citations·filing 2001–2021
95Inventor score
Files withINFINEON TECHNOLOGIES AG23INFINEON TECHNOLOGIES AUSTRIA AG15INFINEON TECHNOLOGIES AUSTRIA2SCHULZE HANS-JOACHIM2AHRENS CARSTEN1
Top patents by PatentIndex Score
44 records- 0192US8907408B2Stress-reduced field-effect semiconductor device and method for forming thereforSEDLMAIER STEFAN·Filed 2012·Granted Dec 9, 2014·15 cites·19 claims
- 0289US9647083B2Producing a semiconductor device by epitaxial growthINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 9, 2017·6 cites·14 claims
- 0388US9711357B1Method of manufacturing a semiconductor device with epitaxial layers and an alignment structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 18, 2017·6 cites·19 claims
- 0482US10923432B2Method of manufacturing a semiconductor device with epitaxial layers and an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 16, 2021·1 cites·18 claims
- 0582US10325804B2Method of wafer thinning and realizing backside metal structuresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 18, 2019·3 cites·22 claims
- 0677US11011409B2Devices with backside metal structures and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 18, 2021·1 cites·20 claims
- 0772US9960076B2Devices with backside metal structures and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 1, 2018·1 cites·29 claims
- 0867US10600740B2Method of manufacturing a semiconductor device with epitaxial layers and an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 24, 2020·0 cites·19 claims
- 0966US9406763B2Stress-reduced field-effect semiconductor device and method for forming thereforINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 2, 2016·1 cites·18 claims
- 1064US9379196B2Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 28, 2016·1 cites·10 claims
- 1164US9171918B2Semiconductor device with an electrode buried in a cavityINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Oct 27, 2015·1 cites·13 claims
- 1264US8883612B2Method for manufacturing a semiconductor deviceSCHULZE HANS-JOACHIM·Filed 2011·Granted Nov 11, 2014·1 cites·16 claims
- 1361US12107130B2Semiconductor device having semiconductor device elements in a semiconductor layerINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 1, 2024·0 cites·16 claims
- 1460US10535553B2Devices with backside metal structures and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jan 14, 2020·0 cites·14 claims
- 1559US10236258B2Method of manufacturing a semiconductor device with epitaxial layers and an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Mar 19, 2019·0 cites·11 claims
- 1658US9449847B2Method for manufacturing a semiconductor device by thermal treatment with hydrogenINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 20, 2016·0 cites·16 claims
- 1756US11038028B2Semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 15, 2021·0 cites·17 claims
- 1856US10367067B2Semiconductor device having an oxygen diffusion barrierINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 30, 2019·0 cites·21 claims
- 1955US9941365B2Method for forming a stress-reduced field-effect semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 10, 2018·0 cites·16 claims
- 2053US9601368B2Semiconductor device comprising an oxygen diffusion barrier and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2015·Granted Mar 21, 2017·0 cites·16 claims
- 2152US10566198B2Doping methodINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 18, 2020·0 cites·23 claims
- 2251US10727311B2Method for manufacturing a power semiconductor device having a reduced oxygen concentrationINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 28, 2020·0 cites·19 claims
- 2351US2016372336A1Method for Manufacturing a Semiconductor Device by Hydrogen TreatmentINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 2450US10243066B2Producing a semiconductor device by epitaxial growthINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Mar 26, 2019·0 cites·20 claims
- 2549US9768273B2Method of forming a trench using epitaxial lateral overgrowthINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
- 2649US9306010B2Semiconductor arrangementSCHULZE HANS-JOACHIM·Filed 2012·Granted Apr 5, 2016·0 cites·21 claims
- 2748US9698247B2Method of producing a semiconductor arrangementINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 4, 2017·0 cites·8 claims
- 2848US9449968B2Method for manufacturing a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Sep 20, 2016·0 cites·21 claims
- 2948US8816503B2Semiconductor device with buried electrodeAHRENS CARSTEN·Filed 2011·Granted Aug 26, 2014·0 cites·14 claims
- 3047US10121859B2Method of manufacturing semiconductor devices with transistor cells and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 6, 2018·0 cites·22 claims
- 3147US9406564B2Singulation through a masking structure surrounding expitaxial regionsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 2, 2016·0 cites·41 claims
- 3247US6660637B2Process for chemical mechanical polishingINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 9, 2003·4 cites·19 claims
- 3345US9972488B2Method of reducing defects in an epitaxial layerINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 15, 2018·0 cites·18 claims
- 3443US10199372B2Monolithically integrated chip including active electrical components and passive electrical components with chip edge stabilization structuresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 5, 2019·0 cites·25 claims
- 3542US10074566B2Semiconductor device and methods for forming a plurality of semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 11, 2018·0 cites·32 claims
- 3642US9954065B2Method of forming a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 24, 2018·0 cites·20 claims
- 3742US2014306327A1Semiconductor device and method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2013·Application pending·0 cites
- 3840US9478639B2Electrode-aligned selective epitaxy method for vertical power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 25, 2016·0 cites·20 claims
- 3939US9859378B2Semiconductor device with reduced emitter efficiencyINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·0 cites·8 claims
- 4037US11149351B2Apparatus and method for chemical vapor deposition process for semiconductor substratesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 19, 2021·0 cites·17 claims
- 4137US9875926B2Substrates with buried isolation layers and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 23, 2018·0 cites·25 claims
- 4236US2017221988A1Method of Manufacturing Semiconductor Devices Including Deposition of Crystalline Silicon in TrenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Application pending·0 cites
- 4333US2017110331A1Methods for Forming Semiconductor DevicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 4433US2017005091A1Semiconductor Devices and Method for Forming Semiconductor DevicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
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