Inventor · disambiguated record
Samuel C. Pan
Also filed as: PAN SAMUEL · PAN SAMUEL C · PAN SAMUEL CHENG-SHENG
81 granted patents·2 pending applications·1,065 citations·filing 1973–2024
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD64MACRONIX INT CO LTD12UNIV NAT TAIWAN5LIU YEN-LING1PAN SAMUEL C1
Top patents by PatentIndex Score
83 records- 0198US6177317B1Method of making nonvolatile memory devices having reduced resistance diffusion regionsMACRONIX INT CO LTD·Filed 1999·Granted Jan 23, 2001·403 cites·18 claims
- 0296US9978868B2Negative capacitance field effect transistor with charged dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·35 cites·20 claims
- 0396US6512696B1Method of programming and erasing a SNNNS type non-volatile memory cellMACRONIX INT CO LTD·Filed 2001·Granted Jan 28, 2003·140 cites·18 claims
- 0495US9490430B1Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 8, 2016·16 cites·19 claims
- 0594US10332985B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·10 cites·20 claims
- 0694US9553199B2FET device having a vertical channel in a 2D material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 24, 2017·17 cites·20 claims
- 0794US6576511B2Method for forming nitride read only memoryMACRONIX INT CO LTD·Filed 2001·Granted Jun 10, 2003·148 cites·22 claims
- 0893US6444523B1Method for fabricating a memory device with a floating gateMACRONIX INT CO LTD·Filed 2001·Granted Sep 3, 2002·63 cites·19 claims
- 0992US11502174B2Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·2 cites·20 claims
- 1091US9496259B2FinFET semiconductor device having fins with stronger structural strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·8 cites·14 claims
- 1190US6829175B2Erasing method for non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Dec 7, 2004·47 cites·11 claims
- 1289US9559168B2Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·7 cites·20 claims
- 1388US10269981B2Multi-channel field effect transistors using 2D-materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 23, 2019·5 cites·20 claims
- 1487US3989466ALiquid-liquid extraction apparatus including fibrous strand packingPAN SAMUEL C·Filed 1973·Granted Nov 2, 1976·48 cites·7 claims
- 1586US10797137B2Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·3 cites·20 claims
- 1686US10516050B2Method for forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·3 cites·20 claims
- 1786US10269564B2Method of forming a semiconductor device using layered etching and repairing of damaged portionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·20 claims
- 1885US9941380B2Graphene transistor and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·6 cites·20 claims
- 1985US2024395936A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2084US10461254B2Methods of graphene growth and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 29, 2019·2 cites·20 claims
- 2184US9577078B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 21, 2017·5 cites·20 claims
- 2283US12308371B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 2382US10985019B2Method of forming a semiconductor device using layered etching and repairing of damaged portionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·1 cites·20 claims
- 2482US10510903B2Impact ionization semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·3 cites·20 claims
- 2582US9859115B2Semiconductor devices comprising 2D-materials and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·3 cites·20 claims
- 2680US9923142B2Methods of graphene growth and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·2 cites·20 claims
- 2779US10832957B2Method for direct forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·1 cites·20 claims
- 2877US11817481B2Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 2976US10636652B2Method of forming a semiconductor device using layered etching and repairing of damaged portionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 28, 2020·1 cites·20 claims
- 3075US11791410B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 3174US11031510B2Impact ionization semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·1 cites·20 claims
- 3274US10957784B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·1 cites·20 claims
- 3374US6413818B1Method for forming a contoured floating gate cellMACRONIX INT CO LTD·Filed 1999·Granted Jul 2, 2002·36 cites·28 claims
- 3473US9934969B2Charged-particle-beam patterning without resistTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 3, 2018·2 cites·20 claims
- 3572US9412439B1Hybrid TFET-MOSFET circuit designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·4 cites·20 claims
- 3670US11563009B2Semiconductor memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
- 3770US6248631B1Method for forming a v-shaped floating gateMACRONIX INT CO LTD·Filed 1999·Granted Jun 19, 2001·26 cites·23 claims
- 3869US11605674B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3968US9859276B2FinFET semiconductor device having fins with stronger structural strengthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 2, 2018·1 cites·20 claims
- 4067US10957602B2Method for direct forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·0 cites·15 claims
- 4166US11538938B2Method for forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 27, 2022·0 cites·20 claims
- 4266US11211460B22D crystal hetero-structures and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 4366US11164972B2Method for forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·0 cites·17 claims
- 4466US11063149B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·20 claims
- 4566US10978461B2Antifuse array and method of forming antifuse using anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·0 cites·20 claims
- 4666US10510611B2Method for direct forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·0 cites·20 claims
- 4766US9748379B2Double exponential mechanism controlled transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·1 cites·20 claims
- 4865US10756271B2Methods of graphene growth and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
- 4964US9502502B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·1 cites·20 claims
- 5063US11024674B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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