Inventor · disambiguated record
Eung-Gwan Kim
Also filed as: KIM EUNG-GWAN
2 granted patents·14 citations·filing 2015–2017
58Inventor score
Technology areasH10P
Files withSAMSUNG ELECTRONICS CO LTD2
Top patents by PatentIndex Score
2 records- 0191US9659827B2Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 23, 2017·9 cites·20 claims
- 0287US9935017B2Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separationSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 3, 2018·5 cites·10 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →