Inventor · disambiguated record
Yanli Zhang
Also filed as: ZHANG YANLI · ZHANG YANLI S
173 granted patents·14 pending applications·3,395 citations·filing 2007–2025
99Inventor score
Top patents by PatentIndex Score
187 records- 0199US11177280B1Three-dimensional memory device including wrap around word lines and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 16, 2021·13 cites·20 claims
- 0299US10700078B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·35 cites·12 claims
- 0399US10700090B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·46 cites·12 claims
- 0499US10290643B1Three-dimensional memory device containing floating gate select transistorSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 14, 2019·44 cites·11 claims
- 0599US10103169B1Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch processSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 16, 2018·70 cites·14 claims
- 0699US9824966B1Three-dimensional memory device containing a lateral source contact and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 21, 2017·129 cites·18 claims
- 0799US9812462B1Memory hole size variation in a 3D stacked memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·104 cites·11 claims
- 0899US9673213B1Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jun 6, 2017·77 cites·23 claims
- 0999US9627399B2Three-dimensional memory device with metal and silicide control gatesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·41 cites·25 claims
- 1099US8878278B2Compact three dimensional vertical NAND and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 4, 2014·136 cites·24 claims
- 1198US11631686B2Three-dimensional memory array including dual work function floating gates and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 18, 2023·6 cites·15 claims
- 1298US11302714B2Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 12, 2022·5 cites·20 claims
- 1398US11211392B1Hole pre-charge scheme using gate induced drain leakage generationSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 28, 2021·10 cites·14 claims
- 1498US10868042B1Ferroelectric memory device containing word lines and pass gates and method of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 15, 2020·31 cites·20 claims
- 1598US10727215B1Three-dimensional memory device with logic signal routing through a memory die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 28, 2020·21 cites·18 claims
- 1698US10475804B1Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 12, 2019·33 cites·3 claims
- 1798US10438964B2Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 8, 2019·40 cites·7 claims
- 1898US10381376B1Three-dimensional flat NAND memory device including concave word lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·58 cites·20 claims
- 1998US10192878B1Three-dimensional memory device with self-aligned multi-level drain select gate electrodesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 29, 2019·54 cites·12 claims
- 2098US10115730B1Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·40 cites·18 claims
- 2198US10050054B2Three-dimensional memory device having drain select level isolation structure and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 14, 2018·26 cites·9 claims
- 2298US10008570B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·62 cites·16 claims
- 2398US9972641B1Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 15, 2018·68 cites·30 claims
- 2498US9960180B1Three-dimensional memory device with partially discrete charge storage regions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 1, 2018·46 cites·12 claims
- 2598US9917100B2Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 13, 2018·52 cites·22 claims
- 2698US9831266B2Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·58 cites·24 claims
- 2798US9805805B1Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·61 cites·19 claims
- 2898US9698153B2Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing padSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jul 4, 2017·54 cites·11 claims
- 2998US9627395B2Enhanced channel mobility three-dimensional memory structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·33 cites·29 claims
- 3098US9576971B2Three-dimensional memory structure having a back gate electrodeSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 21, 2017·32 cites·9 claims
- 3198US9570463B1Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Feb 14, 2017·104 cites·18 claims
- 3298US9478558B2Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·43 cites·34 claims
- 3398US9236396B1Three dimensional NAND device and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 12, 2016·46 cites·11 claims
- 3498US9177966B1Three dimensional NAND devices with air gap or low-k coreSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 3, 2015·92 cites·37 claims
- 3598US9159739B2Floating gate ultrahigh density vertical NAND flash memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 13, 2015·70 cites·27 claims
- 3697US12307354B2Compute in memory three-dimensional non-volatile nor memory for neural networksSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 20, 2025·5 cites·20 claims
- 3797US11600634B2Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 7, 2023·5 cites·20 claims
- 3897US11164890B2Cross-point array of ferroelectric field effect transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 2, 2021·5 cites·14 claims
- 3997US11024648B2Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 1, 2021·6 cites·18 claims
- 4097US10879269B1Ferroelectric memory device containing a series connected select gate transistor and method of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 29, 2020·25 cites·14 claims
- 4197US10811431B1Ferroelectric memory device containing word lines and pass gates and method of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 20, 2020·27 cites·20 claims
- 4297US10777575B1Three-dimensional memory device with self-aligned vertical conductive strips having a gate-all-around configuration and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 15, 2020·24 cites·11 claims
- 4397US10685978B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 16, 2020·18 cites·20 claims
- 4497US10453854B2Three-dimensional memory device with thickened word lines in terrace regionSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 22, 2019·25 cites·11 claims
- 4597US10373969B2Three-dimensional memory device including partially surrounding select gates and fringe field assisted programming thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 6, 2019·29 cites·22 claims
- 4697US10262599B2Display backlight brightness adjustmentINTEL CORP·Filed 2017·Granted Apr 16, 2019·22 cites·25 claims
- 4797US10256248B2Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 9, 2019·42 cites·25 claims
- 4897US10224407B2High voltage field effect transistor with laterally extended gate dielectric and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 5, 2019·22 cites·16 claims
- 4997US10020314B1Forming memory cell film in stack openingSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 10, 2018·20 cites·17 claims
- 5097US9799670B2Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 24, 2017·44 cites·25 claims
Showing the top 50 of 187 patent records by PatentIndex Score.
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