Inventor · disambiguated record
Rajan K. Pandey
Also filed as: PANDEY RAJAN K · PANDEY RAJAN KUMAR
18 granted patents·3 pending applications·49 citations·filing 2011–2022
92Inventor score
Top patents by PatentIndex Score
21 records- 0197US9583486B1Stable work function for narrow-pitch devicesIBM·Filed 2015·Granted Feb 28, 2017·20 cites·8 claims
- 0294US10170576B2Stable work function for narrow-pitch devicesIBM·Filed 2017·Granted Jan 1, 2019·7 cites·14 claims
- 0394US9627484B1Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layerIBM·Filed 2015·Granted Apr 18, 2017·7 cites·15 claims
- 0490US9735250B2Stable work function for narrow-pitch devicesIBM·Filed 2016·Granted Aug 15, 2017·4 cites·15 claims
- 0588US9589635B2Semiconductor device with a stoichiometric gradientIBM·Filed 2014·Granted Mar 7, 2017·6 cites·20 claims
- 0679US2023299170A1Stable work function for narrow-pitch devicesTESSERA LLC·Filed 2022·Application pending·0 cites
- 0769US8929039B2Silicon controlled rectifier (SCR) clamp including metal insulator transition (MIT) resistorBAJAJ MOHIT·Filed 2012·Granted Jan 6, 2015·2 cites·14 claims
- 0864US10366897B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2017·Granted Jul 30, 2019·0 cites·17 claims
- 0964US10347494B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2018·Granted Jul 9, 2019·0 cites·19 claims
- 1063US10319596B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2017·Granted Jun 11, 2019·0 cites·20 claims
- 1163US8450792B2Structure and fabrication method of tunnel field effect transistor with increased drive current and reduced gate induced drain leakage (GIDL)BAJAJ MOHIT·Filed 2011·Granted May 28, 2013·2 cites·20 claims
- 1260US9984883B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2016·Granted May 29, 2018·0 cites·8 claims
- 1359US9972497B2Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layerIBM·Filed 2016·Granted May 15, 2018·0 cites·18 claims
- 1459US9105498B2Gate strain induced work function engineeringBAJAJ MOHIT·Filed 2012·Granted Aug 11, 2015·1 cites·18 claims
- 1557US9705079B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jul 11, 2017·0 cites·1 claims
- 1657US2017148890A1Stable work function for narrow-pitch devicesIBM·Filed 2016·Application pending·0 cites
- 1756US9680096B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jun 13, 2017·0 cites·1 claims
- 1855US9508930B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Nov 29, 2016·0 cites·1 claims
- 1953US9647210B2Tunable voltage margin access diodesIBM·Filed 2015·Granted May 9, 2017·0 cites·17 claims
- 2052US9070579B2Gate strain induced work function engineeringIBM·Filed 2014·Granted Jun 30, 2015·0 cites·16 claims
- 2138US2013087856A1Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS GateORTOLLAND CLAUDE·Filed 2011·Application pending·0 cites
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