Inventor · disambiguated record
Jung-Tao Chung
Also filed as: CHUNG JUNG-TAO
9 granted patents·2 pending applications·9 citations·filing 2012–2024
79Inventor score
Top patents by PatentIndex Score
11 records- 0177US11695037B2Semiconductor structureWIN SEMICONDUCTORS CORP·Filed 2021·Granted Jul 4, 2023·1 cites·20 claims
- 0277US9064704B2Integrated circuits with ESD protection devicesWIN SEMICONDUCTORS CORP·Filed 2013·Granted Jun 23, 2015·5 cites·20 claims
- 0369US11967613B2Semiconductor structureWIN SEMICONDUCTORS CORP·Filed 2023·Granted Apr 23, 2024·0 cites·20 claims
- 0468US8970998B2Compound semiconductor ESD protection devicesWIN SEMICONDUCTOR CORP·Filed 2012·Granted Mar 3, 2015·3 cites·45 claims
- 0555US11264379B2Monolithic integration of enhancement mode and depletion mode field effect transistorsWIN SEMICONDUCTORS CORP·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
- 0654US2025380443A1Semiconductor deviceWIN SEMICONDUCTORS CORP·Filed 2024·Application pending·0 cites
- 0752US2025183205A1Semiconductor structureWIN SEMICONDUCTORS CORP·Filed 2023·Application pending·0 cites
- 0848US10811407B2Monolithic integration of enhancement mode and depletion mode field effect transistorsWIN SEMICONDUCTORS CORP·Filed 2019·Granted Oct 20, 2020·0 cites·20 claims
- 0941US8964342B2Compound semiconductor ESD protection devicesWIN SEMICONDUCTORS CORP·Filed 2012·Granted Feb 24, 2015·0 cites·21 claims
- 1040US11177379B2Gate-sinking pHEMTs having extremely uniform pinch-off/threshold voltageWIN SEMICONDUCTORS CORP·Filed 2019·Granted Nov 16, 2021·0 cites·18 claims
- 1139US11081485B2Monolithic integrated circuit device having gate-sinking pHEMTsWIN SEMICONDUCTORS CORP·Filed 2019·Granted Aug 3, 2021·0 cites·19 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →