Inventor · disambiguated record
Yin-Fu Huang
Also filed as: Huang yin fu
16 granted patents·3 pending applications·11 citations·filing 2005–2016
87Inventor score
Top patents by PatentIndex Score
19 records- 0178US9899513B1Lateral diffused metal oxide semiconductor transistor and manufacturing method thereofMACRONIX INT CO LTD·Filed 2016·Granted Feb 20, 2018·3 cites·18 claims
- 0265US8928095B2Semiconductor device having reduced leakage current at breakdown and method of fabricating thereofMACRONIX INT CO LTD·Filed 2013·Granted Jan 6, 2015·1 cites·21 claims
- 0362US8258042B2Buried layer of an integrated circuitHUANG YIN-FU·Filed 2009·Granted Sep 4, 2012·2 cites·20 claims
- 0457US9231078B2Semiconductor and manufacturing method thereofMACRONIX INT CO LTD·Filed 2012·Granted Jan 5, 2016·1 cites·6 claims
- 0556US8896061B2Field device and method of operating high voltage semiconductor device applied with the sameCHENG AN-LI·Filed 2012·Granted Nov 25, 2014·2 cites·10 claims
- 0656US8304830B2LDPMOS structure for enhancing breakdown voltage and specific on resistance in biCMOS-DMOS processHUANG YIN-FU·Filed 2010·Granted Nov 6, 2012·1 cites·7 claims
- 0752US8659080B2Semiconductor structure and manufacturing process thereofCHIN YU-HSIEN·Filed 2012·Granted Feb 25, 2014·1 cites·8 claims
- 0848US9082787B2Semiconductor structure and manufacturing process thereofMACRONIX INT CO LTD·Filed 2013·Granted Jul 14, 2015·0 cites·9 claims
- 0947US8586442B2Manufacturing method for high voltage transistorMACRONIX INT CO LTD·Filed 2012·Granted Nov 19, 2013·0 cites·9 claims
- 1047US8507993B2Buried layer of an integrated circuitHUANG YIN-FU·Filed 2012·Granted Aug 13, 2013·0 cites·18 claims
- 1146US9029947B2Field device and method of operating high voltage semiconductor device applied with the sameMACRONIX INT CO LTD·Filed 2014·Granted May 12, 2015·0 cites·8 claims
- 1245US2013037883A1Ldpmos structure for enhancing breakdown voltage and specific on resistance in bicmos-dmos processMACRONIX INT CO LTD·Filed 2012·Application pending·0 cites
- 1344US8367511B2Manufacturing method for high voltage transistorMACRONIX INT CO LTD·Filed 2011·Granted Feb 5, 2013·0 cites·9 claims
- 1438US2014175526A1Semiconductor device for current control and method thereofMACRONIX INT CO LTD·Filed 2012·Application pending·0 cites
- 1537US7241693B2Processing method for protection of backside of a waferMACRONIX INT CO LTD·Filed 2005·Granted Jul 10, 2007·0 cites·9 claims
- 1634US8643072B1Semiconductor structure and method for forming the sameCHUNG MIAO-CHUN·Filed 2012·Granted Feb 4, 2014·0 cites·8 claims
- 1730US8691653B2Semiconductor structure with reduced surface field effect and manufacturing process thereofHSU CHIH-CHIA·Filed 2012·Granted Apr 8, 2014·0 cites·9 claims
- 1830US2012037989A1Ldmos having single-strip source contact and method for manufacturing sameHUANG HSUEH-I·Filed 2010·Application pending·0 cites
- 1927US8476705B2High voltage semiconductor deviceHUANG HSUEHI·Filed 2010·Granted Jul 2, 2013·0 cites·19 claims
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