Inventor · disambiguated record
Roger Klas Malmhall
Also filed as: MALMHAELL ROGER K · MALMHAELL ROGER KLAS · MALMHALL ROGER · MALMHALL ROGER K
52 granted patents·3 pending applications·835 citations·filing 1991–2016
99Inventor score
Files withAVALANCHE TECHNOLOGY INC22RANJAN RAJIV YADAV17HUAI YIMING4ZHOU YUCHEN4SEAGATE TECHNOLOGY LLC2
Top patents by PatentIndex Score
55 records- 0199US8535952B2Method for manufacturing non-volatile magnetic memoryRANJAN RAJIV YADAV·Filed 2008·Granted Sep 17, 2013·124 cites·23 claims
- 0299US8422286B2Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM)RANJAN RAJIV YADAV·Filed 2012·Granted Apr 16, 2013·84 cites·19 claims
- 0398US9793319B2Multilayered seed structure for perpendicular MTJ memory elementAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Oct 17, 2017·46 cites·20 claims
- 0498US8374025B1Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layerAVALANCHE TECHNOLOGY INC·Filed 2010·Granted Feb 12, 2013·40 cites·14 claims
- 0597US9444039B2Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayersAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Sep 13, 2016·7 cites·19 claims
- 0697US8779537B2Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jul 15, 2014·31 cites·25 claims
- 0797US8542524B2Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirementKESHTBOD PARVIZ·Filed 2010·Granted Sep 24, 2013·43 cites·3 claims
- 0896US9419210B2Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayersAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Aug 16, 2016·5 cites·20 claims
- 0996US8975088B2MRAM etching processesAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Mar 10, 2015·22 cites·9 claims
- 1096US8802451B2Method for manufacturing high density non-volatile magnetic memoryMALMHALL ROGER KLAS·Filed 2012·Granted Aug 12, 2014·64 cites·9 claims
- 1196US8169821B1Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM)RANJAN RAJIV YADAV·Filed 2010·Granted May 1, 2012·20 cites·1 claims
- 1296US8018011B2Low cost multi-state magnetic memoryAVALANCHE TECHNOLOGY INC·Filed 2007·Granted Sep 13, 2011·39 cites·26 claims
- 1395US9318179B2Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayersAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Apr 19, 2016·15 cites·20 claims
- 1495US9025371B1Spin-transfer torque magnetic random access memory (STTMRAM) with perpendicular laminated free layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted May 5, 2015·18 cites·15 claims
- 1595US8536063B2MRAM etching processesSATOH KIMIHIRO·Filed 2011·Granted Sep 17, 2013·21 cites·6 claims
- 1695US8508984B2Low resistance high-TMR magnetic tunnel junction and process for fabrication thereofRANJAN RAJIV YADAV·Filed 2008·Granted Aug 13, 2013·39 cites·25 claims
- 1795US8063459B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2007·Granted Nov 22, 2011·25 cites·23 claims
- 1894US8593862B2Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropyRANJAN RAJIV YADAV·Filed 2009·Granted Nov 26, 2013·32 cites·18 claims
- 1994US7869266B2Low current switching magnetic tunnel junction design for magnetic memory using domain wall motionAVALANCHE TECHNOLOGY INC·Filed 2008·Granted Jan 11, 2011·28 cites·6 claims
- 2093US8498150B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2012·Granted Jul 30, 2013·9 cites·32 claims
- 2192US9019758B2Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayersHUAI YIMING·Filed 2011·Granted Apr 28, 2015·9 cites·10 claims
- 2291US8885395B2Magnetoresistive logic cell and method of useZHOU YUCHEN·Filed 2012·Granted Nov 11, 2014·14 cites·6 claims
- 2386US9349941B2STTMRAM element having multiple perpendicular MTJs coupled in seriesAVALANCHE TECHNOLOGY INC·Filed 2015·Granted May 24, 2016·5 cites·9 claims
- 2486US8980649B2Method for manufacturing non-volatile magnetic memory cell in two facilitiesAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Mar 17, 2015·8 cites·10 claims
- 2586US8330240B2Low cost multi-state magnetic memoryRANJAN RAJIV YADAV·Filed 2011·Granted Dec 11, 2012·8 cites·33 claims
- 2685US8542526B2Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirementAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Sep 24, 2013·4 cites·16 claims
- 2782US9337413B2High capaciy low cost multi-state magnetic memoryAVALANCHE TECHNOLOGY INC·Filed 2015·Granted May 10, 2016·2 cites·11 claims
- 2880US9218866B2High capaciy low cost multi-state magnetic memoryAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Dec 22, 2015·4 cites·10 claims
- 2980US8772886B2Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layerHUAI YIMING·Filed 2011·Granted Jul 8, 2014·5 cites·16 claims
- 3080US8492860B2Magnetic random access memory with switching assist layerZHOU YUCHEN·Filed 2011·Granted Jul 23, 2013·4 cites·43 claims
- 3179US8498149B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2012·Granted Jul 30, 2013·3 cites·42 claims
- 3279US8493780B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2012·Granted Jul 23, 2013·3 cites·44 claims
- 3378US9070692B2Shields for magnetic memory chip packagesAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·5 cites·27 claims
- 3478US6661592B2Multiple orientation magnetic information storageSEAGATE TECHNOLOGY LLC·Filed 2002·Granted Dec 9, 2003·10 cites·8 claims
- 3577US8982616B1Spin-transfer torque magnetic random access memory (STTMRAM) with perpendicular laminated free layerAVALANCHE TECHNOLOGY INC·Filed 2012·Granted Mar 17, 2015·4 cites·26 claims
- 3677US8611147B2Spin-transfer torque magnetic random access memory (STTMRAM) using a synthetic free layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Dec 17, 2013·4 cites·22 claims
- 3773US8488376B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2012·Granted Jul 16, 2013·2 cites·35 claims
- 3871US8456897B2Low cost multi-state magnetic memoryRANJAN RAJIV YADAV·Filed 2011·Granted Jun 4, 2013·3 cites·5 claims
- 3965US9478279B2High capacity low cost multi-state magnetic memoryAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Oct 25, 2016·1 cites·8 claims
- 4064US8498148B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2012·Granted Jul 30, 2013·1 cites·32 claims
- 4164US8493779B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2012·Granted Jul 23, 2013·1 cites·42 claims
- 4259US11678586B2Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing sameHUAI YIMING·Filed 2013·Granted Jun 13, 2023·0 cites·13 claims
- 4359US8860158B2High speed STT-MRAM with orthogonal pinned layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Oct 14, 2014·0 cites·50 claims
- 4456US6022609AMagnetic recording medium with substantially uniform sub-micron-scale morphologySEAGATE TECHNOLOGY·Filed 1996·Granted Feb 8, 2000·13 cites·24 claims
- 4555US9444038B2Magnetic random access memory with nickel/transition metal multilayered seed structureAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Sep 13, 2016·0 cites·20 claims
- 4655US8981506B1Magnetic random access memory with switchable switching assist layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Mar 17, 2015·1 cites·26 claims
- 4754US2008246104A1High Capacity Low Cost Multi-State Magnetic MemoryYADAV TECHNOLOGY·Filed 2007·Application pending·0 cites
- 4851US8493778B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2012·Granted Jul 23, 2013·0 cites·44 claims
- 4950US8399943B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2011·Granted Mar 19, 2013·0 cites·27 claims
- 5050US8399942B2Non-volatile magnetic memory element with graded layerRANJAN RAJIV YADAV·Filed 2011·Granted Mar 19, 2013·0 cites·20 claims
Showing the top 50 of 55 patent records by PatentIndex Score.
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