Inventor · disambiguated record
Noboru Fukuhara
Also filed as: FUKUHARA NOBORU
31 granted patents·10 pending applications·142 citations·filing 1988–2022
95Inventor score
Files withSUMITOMO CHEMICAL CO30SCIOCS CO LTD6FUKUHARA NOBORU2HATA MASAHIKO1SUMIKA EPI SOLUTION COMPANY LT1
Top patents by PatentIndex Score
41 records- 0184US5603764AProcess for crystal growth of III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 1995·Granted Feb 18, 1997·54 cites·15 claims
- 0282US11342220B2Structure manufacturing method and manufacturing device, and light irradiation deviceSCIOCS CO LTD·Filed 2019·Granted May 24, 2022·2 cites·19 claims
- 0379US9755040B2Semiconductor wafer, method of producing semiconductor wafer and electronic deviceSUMITOMO CHEMICAL CO·Filed 2015·Granted Sep 5, 2017·3 cites·14 claims
- 0472US11756827B2Structure manufacturing method and manufacturing device, and light irradiation deviceSUMITOMO CHEMICAL CO·Filed 2022·Granted Sep 12, 2023·0 cites·3 claims
- 0568US8890213B2Semiconductor wafer, electronic device, a method of producing semiconductor wafer, and method of producing electronic deviceYAMANAKA SADANORI·Filed 2011·Granted Nov 18, 2014·2 cites·16 claims
- 0664US8610450B2Method of measuring electrical characteristics of semiconductor waferFUKUHARA NOBORU·Filed 2011·Granted Dec 17, 2013·2 cites·13 claims
- 0763US12112945B2Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic deviceSUMITOMO CHEMICAL CO·Filed 2021·Granted Oct 8, 2024·0 cites·8 claims
- 0861US8901656B2Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistorSUMITOMO CHEMICAL CO·Filed 2013·Granted Dec 2, 2014·1 cites·9 claims
- 0961US6744078B2Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layersSUMITOMO CHEMICAL CO·Filed 2002·Granted Jun 1, 2004·7 cites·8 claims
- 1060US4976216AApparatus for vapor-phase growthSUMITOMO CHEMICAL CO·Filed 1988·Granted Dec 11, 1990·14 cites·4 claims
- 1158US11114296B2Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic deviceSUMITOMO CHEMICAL CO·Filed 2019·Granted Sep 7, 2021·0 cites·11 claims
- 1256US5708301AElectrode material and electrode for III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 1995·Granted Jan 13, 1998·17 cites·3 claims
- 1355US2023099777A1Production apparatus for producing structural body and production method for producing structural bodySCIOCS CO LTD·Filed 2022·Application pending·0 cites
- 1454US12283487B2Method for manufacturing structureSUMITOMO CHEMICAL CO·Filed 2020·Granted Apr 22, 2025·0 cites·16 claims
- 1554US12054847B2Method and device for manufacturing structureSUMITOMO CHEMICAL CO·Filed 2020·Granted Aug 6, 2024·0 cites·20 claims
- 1654US7576352B2Method for producing compound semiconductor wafer and compound semiconductor deviceSUMITOMO CHEMICAL CO·Filed 2007·Granted Aug 18, 2009·0 cites·1 claims
- 1752US5332451AEpitaxially grown compound-semiconductor crystalSUMITOMO CHEMICAL CO·Filed 1992·Granted Jul 26, 1994·21 cites·17 claims
- 1851US12002880B2Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistorSUMITOMO CHEMICAL CO·Filed 2021·Granted Jun 4, 2024·0 cites·17 claims
- 1950US11393693B2Structure manufacturing method and intermediate structureSCIOCS CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·23 claims
- 2049US2011122355A1Active matrix substrate, display panel, display device, and method for manufacturing active matrix substrateSUMITOMO CHEMICAL CO·Filed 2009·Application pending·0 cites
- 2149US2011122344A1Active matrix substrate, display panel, display device, and method for manufacturing active matrix substrateSUMITOMO CHEMICAL CO·Filed 2009·Application pending·0 cites
- 2248US2023343597A1Structure manufacturing method and structure manufacturing apparatusSUMITOMO CHEMICAL CO·Filed 2021·Application pending·0 cites
- 2347US2011001136A1Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistorSUMITOMO CHEMICAL CO·Filed 2008·Application pending·0 cites
- 2447US2022384614A1Semiconductor device and method for manufacturing structureSCIOCS CO LTD·Filed 2020·Application pending·0 cites
- 2546US2022285525A1Method for manufacturing structure, and structureSCIOCS CO LTD·Filed 2020·Application pending·0 cites
- 2644US8803197B2Semiconductor wafer, insulated gate field effect transistor, and method for producing semiconductor waferSUMITOMO CHEMICAL CO·Filed 2013·Granted Aug 12, 2014·0 cites·22 claims
- 2744US7208387B2Method for manufacturing compound semiconductor wafer and compound semiconductor deviceSUMIKA EPI SOLUTION COMPANY LT·Filed 2003·Granted Apr 24, 2007·2 cites·4 claims
- 2843US11342191B2Structure manufacturing method, structure manufacturing apparatus and intermediate structureSCIOCS CO LTD·Filed 2020·Granted May 24, 2022·0 cites·17 claims
- 2943US9379226B2Semiconductor wafer and insulated gate field effect transistorSUMITOMO CHEMICAL CO·Filed 2013·Granted Jun 28, 2016·0 cites·7 claims
- 3043US2011233689A1Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrateSUMITOMO CHEMICAL CO·Filed 2009·Application pending·0 cites
- 3142US7550786B2Compound semiconductor epitaxial substrateSUMITOMO CHEMICAL CO·Filed 2004·Granted Jun 23, 2009·0 cites·4 claims
- 3242US7291873B2High electron mobility epitaxial substrateSUMITOMO CHEMICAL CO·Filed 2003·Granted Nov 6, 2007·1 cites·6 claims
- 3342US2010200894A1Hetero junction bipolar transistorSUMITOMO CHEMICAL CO·Filed 2008·Application pending·0 cites
- 3439US8779471B2Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor waferHATA MASAHIKO·Filed 2012·Granted Jul 15, 2014·0 cites·22 claims
- 3539US2011141076A1Semiconductor device, method for manufacturing semiconductor device, transistor substrate, light emitting device and display deviceFUKUHARA NOBORU·Filed 2009·Application pending·0 cites
- 3637US7923752B2Thin-film crystal wafer having pn junction and method for fabricating the waferSUMITOMO CHEMICAL CO·Filed 2002·Granted Apr 12, 2011·0 cites·11 claims
- 3737US7304332B2Compound semiconductor epitaxial substrate and method for manufacturing sameSUMITOMO CHEMICAL CO·Filed 2003·Granted Dec 4, 2007·0 cites·8 claims
- 3835US5569954AEpitaxial Inx Ga.sub.(1-x) As having a slanted crystallographic plane azimuthSUMITOMO CHEMICAL CO·Filed 1994·Granted Oct 29, 1996·8 cites·7 claims
- 3934US6388323B1Electrode material and electrode for III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 1997·Granted May 14, 2002·3 cites·2 claims
- 4029US5441913AProcess of making a semiconductor epitaxial substrateSUMITOMO CHEMICAL CO·Filed 1994·Granted Aug 15, 1995·3 cites·7 claims
- 4126US5064778AVapor-phase epitaxial growth methodSUMITOMO CHEMICAL CO·Filed 1990·Granted Nov 12, 1991·2 cites·4 claims
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